TYSEMI 2SC4399

Product specification
2SC4399
Features
High power gain : PG=25dB typ (f=100MHz).
applied sets to be made small and slim.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
30
mA
Collector dissipation
PC
150
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB = 10V, IE=0
0.1
ìA
Emitter cutoff current
IEBO
VEB = 4V, IC=0
0.1
ìA
DC current gain
hFE
VCE = 6V , IC = 1mA
60
200
Gain bandwidth product
270
fT
VCE = 6V , IC = 1mA
Reverse transfer capacitance
Cre
VCB = 6V, f = 1MHz
320
0.9
1.2
MHz
pF
Base-collector time constant
rbb'Cc
VCB = 6V, IC= 1mA, f = 31.9MHz
12
20
ps
Power gain
PG
VCB = 6V, IC= 1mA, f = 100MHz
25
dB
Noise figure
NF
VCB = 6V, IC= 1mA, f = 100MHz
3.0
dB
hFE Classification
F
Marking
Rank
3
4
5
hFE
60 120
90 180
135 270
http://www.twtysemi.com
[email protected]
4008-318-123
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