TYSEMI 2SK2159

IC
SMD Type
Type
SMD
Product specification
2SK2159
SOT-89
Unit: mm
4.50
1.50
+0.1
-0.1
+0.1
-0.1
Features
+0.1
2.50-0.1
Capable of drive gate with 1.5 V
Small RDS(on)
RDS(on) = 0.3
MAX. @VGS = 4.0 V, ID = 1.0 A
1
3
2
+0.1
0.53-0.1
+0.1
0.48-0.1
+0.1
0.44-0.1
+0.1
0.80-0.1
MAX. @VGS = 1.5 V, ID = 0.1 A
+0.1
2.60-0.1
RDS(on) = 0.7
+0.1
4.00-0.1
+0.1
1.80-0.1
1 Gate
1. Source
Base
1.
+0.1
0.40-0.1
+0.1
3.00-0.1
2 Drain
Collector
2.2. Drain
3 Source
Emiitter
3.3. Gate
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Drain to source voltage
Parameter
VDSS
60
V
Gate to source voltage
VGSS
14
V
ID
2.0
A
Idp *
4.0
A
Drain current
Power dissipation
PD
2.0
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
* PW
W
10ms,Duty Cycle 50%
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Drain cut-off current
IDSS
VDS=60V,VGS=0
Gate leakage current
IGSS
VGS= 14V,VDS=0
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Min
Typ
Max
Unit
1.0
A
10
VGS(off) VDS=10V,ID=1mA
0.5
0.9
1.1
VDS=10V,ID=1.0A
VGS=1.5V,ID=0.1A
0.4
0.55
0.7
RDS(on) VGS=2.5V,ID=1.0A
0.27
0.5
VGS=4.0V,ID=1.0A
0.22
0.3
Yfs
Input capacitance
Ciss
Output capacitance
Coss
VDS=10V,VGS=0,f=1MHZ
A
V
S
319
pF
109
pF
Reverse transfer capacitance
Crss
22
pF
Turn-on delay time
td(on)
38
ns
128
ns
Rise time
tr
Turn-off delay time
td(off)
Fall time
ID=1.0A,VGS(on)=3V,RL=25 ,RG=10
,VDD=25V
tf
237
ns
130
ns
Marking
Marking
NW
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