MOSFET SMD Type Product specification 2SK2731 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features Easily designed drive circuits. 1 Easy to parallel. 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Fast switching speed. 0.4 3 Low on-resistance. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 1 GATE 2.Emitter 2 SOURCE +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 3.collector 3 DRAIN Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain to source voltage VDSS 30 Gate to source voltage VGSS Drain current 20 ID 0.2 Unit V V A Idp * 0.8 A Power dissipation PD 0.2 W Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Drain source breakdown voltage VDSS ID=1mA,VGS=0V Drain cut-off current IDSS VDS=30V,VGS=0 Gate leakage current IGSS VGS= 20V,VDS=0 VGS(th) VDS=10V,ID=1mA 1.0 Yfs VDS=10V,ID=0.1A 100 Gate threshold voltage Forward transfer admittance Drain to source on-state resistance RDS(on) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Testconditons Min Typ Max 30 Unit V 10 10 2.5 A A V ms VGS=10V,ID=0.1A 1.5 2.8 VGS=4V,ID=0.1A 2.8 4.5 25 pF 15 pF Crss 10 pF Turn-on delay time ton 15 ns Rise time tr 20 ns Turn-off delay time toff 90 ns Fall time tf 100 ns VDS=10V,VGS=0,f=1MHZ ID=0.1A,VGS(on)=10V,RG=10 ,RL=150 ,VDD=15V Marking Marking KL http://www.twtysemi.com [email protected] 4008-318-123 1 of 1