TYSEMI 2SK3111

MOSFET
Product specification
2SK3111
TO-263
Gate voltage rating
+0.1
1.27-0.1
Features
30 V
Unit: mm
+0.1
1.27-0.1
+0.2
4.57-0.2
0.1max
+0.1
1.27-0.1
+0.2
5.28-0.2
Ciss = 1000 pF TYP. (VDS = 10 V, VGS = 0 V)
Avalanche capability rated
+0.2
2.54-0.2
Built-in gate protection diode
+0.2
15.25-0.2
Low input capacitance
+0.1
0.81-0.1
2.54
+0.2
2.54-0.2
MAX. (VGS = 10 V, ID = 10A)
+0.2
8.7-0.2
RDS(on) = 180m
5.60
Low on-state resistance
5.08
1 Gate
+0.2
0.4-0.2
+0.1
-0.1
2 Drain
Surface mount device available
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Drain to source voltage
VDSS
200
V
Gate to source voltage
VGSS
30
V
ID
20
A
Idp *
60
A
Drain current
Power dissipation
TC=25
62
PD
W
1.5
TA=25
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
* PW
Unit
10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Drain cut-off current
IDSS
VDS=200V,VGS=0
Gate leakage current
IGSS
VGS= 30V,VDS=0
VGS(off)
VDS=10V,ID=1mA
2.5
Yfs
VDS=10V,ID=10A
3.0
RDS(on)
VGS=10V,ID=10A
Gate to source cut off voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Typ
Unit
100
A
10
A
4.5
V
180
m
S
120
Ciss
Max
1000
pF
VDS=10V,VGS=0,f=1MHZ
Output capacitance
Coss
300
pF
Reverse transfer capacitance
Crss
150
pF
Turn-on delay time
ton
25
ns
Rise time
tr
90
ns
Turn-off delay time
toff
80
ns
Fall time
tf
40
ns
http://www.twtysemi.com
ID=10A,VGS(on)=10V,VDD=100V,RG=10
[email protected]
4008-318-123
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