MOSFET SMD Type Product specification 2SK3294 TO-263 Gate voltage rating +0.1 1.27-0.1 Features 30 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low input capacitance Ciss = 1500 pF TYP. (VDS = 10 V, VGS = 0 V) Avalanche capability rated +0.2 2.54-0.2 Built-in gate protection diode +0.2 15.25-0.2 MAX. (VGS = 10 V, ID = 10 A) +0.1 0.81-0.1 2.54 5.08 +0.2 2.54-0.2 RDS(on) = 160 m +0.2 8.7-0.2 Low on-state resistance 1 Gate +0.2 0.4-0.2 +0.1 -0.1 2 Drain 3 Source Surface mount device available Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain to source voltage VDSS 250 V Gate to source voltage VGSS 30 V ID 20 A 60 A Drain current Idp * Power dissipation TC=25 100 PD W 1.5 TA=25 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW Unit 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Drain cut-off current IDSS VDS=250V,VGS=0 Gate leakage current IGSS VGS= 30V,VDS=0 VGS(off) VDS=10V,ID=1mA 2.5 Yfs VDS=10V,ID=10A 6.0 RDS(on) VGS=10V,ID=10A Gat cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Typ Max Unit 100 A 10 A 4.5 V S 120 160 m 1500 pF 360 pF Crss 220 pF Turn-on delay time ton 24 ns Rise time tr 78 ns Turn-off delay time toff 110 ns Fall time tf 60 ns http://www.twtysemi.com VDS=10V,VGS=0,f=1MHZ ID=10A,VGS(on)=10V,RG=10 ,VDD=125V [email protected] 4008-318-123 1 of 1