TYSEMI 2SK2415

MOSFET
IC
SMD Type
Product specification
2SK2415
Features
TO-252
Low On-Resistance
MAX. (@ VGS = 10 V, ID = 4.0A)
RDS(on)2 = 0.15
MAX. (@ VGS = 4 V, ID = 4.0 A)
+0.15
6.50-0.15
+0.2
5.30-0.2
+0.15
1.50-0.15
RDS(on)1 = 0.10
Unit: mm
+0.1
2.30-0.1
+0.8
0.50-0.7
2.3
+0.1
0.60-0.1
3.80
+0.15
5.55-0.15
0.127
max
+0.25
2.65-0.1
+0.1
0.80-0.1
+0.28
1.50-0.1
+0.15
0.50-0.15
+0.2
9.70-0.2
Low Ciss Ciss = 570 pF TYP.
1 Gate
+0.15
4.60-0.15
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
20
V
ID
8.0
A
Drain current
Idp *
32
Power dissipation
PD
20
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
* PW
A
W
10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Drain cut-off current
IDSS
VDS=60V,VGS=0
Gate leakage current
IGSS
VGS= 20V,VDS=0
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Min
RDS(on)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Turn-on delay time
Rise time
tr
Turn-off delay time
toff
Fall time
tf
Max
10
10
VGS(off) VDS=10V,ID=1mA
Yfs
Typ
1.0
VDS=10V,ID=4A
5.0
1.6
2.0
8.4
Unit
A
A
V
S
VGS=10V,ID=4A
0.07
0.10
VGS=4V,ID=4A
0.10
0.15
570
pF
290
pF
Crss
75
pF
ton
5
ns
60
ns
VDS=10V,VGS=0,f=1MHZ
ID=4A,VGS(on)=10V,RG=10 ,VDD=30V
75
ns
40
ns
1
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 1