TYSEMI 2SK3636

Transistors
IC
SMD Type
Product specification
2SK3636
TO-263
Avalanche energy capacity guaranteed: EAS
20 mJ
+0.1
1.27-0.1
+0.2
4.57-0.2
0.1max
+0.1
1.27-0.1
5 .2 8 -0+ 0.2.2
No secondary breakdown
+0.1
0.81-0.1
2.54
2.54
+0.2
-0.2
+0.1
5.08-0.1
1 5 .2 5 -0+ 0.2.2
8 .7 -0+ 0.2.2
High-speed switching: tf = 50 ns
5 .6 0
30 V guaranteed
2 .5 4 -0+ 0.2.2
Gate-source surrender voltage VGSS =
1 .2 7 -0+ 0.1.1
Features
Unit: mm
+0.2
0.4-0.2
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain-source surrender voltage
VDSS
800
V
Gate-source surrender voltage
VGSS
30
V
Drain current
ID
3
A
Peak drain current
IDP
6
A
Avalanche energy capability
EAS
20
Power dissipation Ta = 25
PD
Power dissipation
2
W
35
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
http://www.twtysemi.com
mJ
[email protected]
4008-318-123
1 of 2
Transistors
IC
SMD Type
Product specification
2SK3636
Electrical Characteristics Ta = 25
Parameter
Gate-drain surrender voltage
Symbol
Testconditons
VDSS
ID = 1 mA, VGS = 0
Min
Drain-source cutoff current
IDSS
VDS = 640 V, VGS = 0
IGSS
VGS =
Gate threshold voltage
Vth
VDS = 25 V, ID = 1 mA
2.0
Yfs
VDS = 25 V, ID = 2 mA
1.5
Drain-source on resistance *
Diode forward voltage *
RDS(on) VGS = 10 V, ID = 2 mA
IDR = 3 A, VGS = 0
VDS = 10 V, VGS = 0, f = 1 MHz
Unit
V
30 V, VDS = 0
VDSF
Max
800
Gate-source cutoff currentt
Forward transfer admittance *
Typ
100
ìA
1
ìA
5.0
V
4.0
Ù
-1.6
V
2.4
3.2
V
Short-circuit forward transfer capacitance
Ciss
730
pF
Short-circuit output capacitance
Coss
90
pF
Reverse transfer capacitance
Crss
40
pF
Turn-on delay time
td(on)
35
ns
Rise time
tr
60
ns
Fall time
tf
50
ns
Turn-off delay time
VDD = 200 V, ID = 2 A, RL = 100 Ù,VGS
= 10 V
td(off)
160
ns
Thermal resistance (ch-c)
Rth(ch-c)
3.6
/W
Thermal resistance (ch-a)
Rth(ch-a)
62.5
/W
* Pulse measurement
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2