Product specification 2SK3723 1 .2 7 -0+ 0.1.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 For high-speed switching +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 High avalanche resistance 2 .5 4 -0+ 0.2.2 8 .7 -0+ 0.2.2 5 .6 0 Low on-resistance, low Qg +0.2 0.4-0.2 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-source surrender voltage VDSS 150 V Gate-source surrender voltage VGSS 30 V Drain current ID 30 A Peak drain current IDP 120 A Power dissipation 50 PD Channel temperature Tch 150 Storage temperature Tstg -55 to +150 http://www.twtysemi.com W 3 Power dissipation Ta = 25 [email protected] 4008-318-123 1 of 2 Transistors IC SMD Type Product specification 2SK3723 Electrical Characteristics Ta = 25 Parameter Symbol Drain-source surrender voltage VDSS Gate threshold voltage Testconditons Vth VDS = 25 V, ID = 1 mA Drain-source cutoff current IDSS VDS = 120 V, VGS = 0 Gate-source cutoff current IGSS VGS = Drain-source ON resistance Min ID = 1 mA, VGS = 0 Yfs Short-circuit forward transfer capacitance Ciss Short-circuit output capacitance Coss Max 4 30 V, VDS = 0 33 VDS = 25 V, ID = 15 A 8 VDS = 25 V, VGS = 0, f = 1 MHz Unit V 2 RDS(on) VGS = 10 V, ID = 15 A Forward transfer admittance Typ 150 V 100 ìA 1 ìA 42 mÙ 18 S 2 900 pF 618 pF Reverse transfer capacitance Crss 91 pF Turn-on delay time td(on) 32 ns Rise time Tr Turn-off delay time td(off) Fall time VDD 100 V, ID = 15 A,RL = 6.7 Ù, VGS = 10 V tf Diode foward voltage VDSF 46 ns 227 ns 66 ns IDR = 30 A, VGS = 0 -1.5 V Reverse recovery time trr L = 230 ìH, VDD = 100 V 130 ns Reverse recovery charge Qrr IDR = 15 A, di/dt = 100 A/ìs 533 nC 55.4 nC 9.1 nC 22.4 nC Gate charge load Qg Gate-source charge Qgs Gate-drain charge Qgd VDD = 100 V, ID = 15 A,VGS = 10 V Thermal resistance (ch-c) Rth(ch-c) 2.5 /W Thermal resistance (ch-a) Rth(ch-a) 89.2 /W Marking Marking K3723 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2