TYSEMI BCW71

Transistors
IC
SMD Type
Product specification
BCW71,BCW72
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
0.4
3
1
Low voltage (max. 45 V).
0.55
Low current (max. 100 mA).
2
+0.1
0.95-0.1
+0.1
1.9-0.1
+0.05
0.1-0.01
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
Low noise.
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
45
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
100
mA
Peak collector current
ICM
200
mA
Peak base current
IBM
200
mA
mW
Total power dissipation
Ptot
250
Storage temperature
Tstg
-65 to +150
Junction temperature
Tj
150
Operating ambient temperature
Ramb
-65 to +150
Thermal resistance from junction to ambient *
Rth j-a
500
K/W
* Transistor mounted on an FR4 printed-circuit board.
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
Transistors
IC
SMD Type
Product specification
BCW71,BCW72
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector cutoff current
Emitter cutoff current
BCW71
DC current gain
Testconditons
Min
BCW71
nA
IE = 0; VCB = 20 V; Tj = 100
10
ìA
IEBO
IC = 0; VEB = 5 V
100
ìA
hFE
IC = 10 ìA; VCE = 5 V
90
150
hFE
VBE(sat)
IC = 2 mA; VCE = 5 V
110
120
200
450
IC = 10 mA; IB = 0.5 mA
120
IC = 50 mA; IB = 2.5 mA
210
mV
IC = 10 mA; IB = 0.5 mA
750
mV
IC = 50 mA; IB = 2.5 mA
250
850
Base to emitter voltage
VBE
IC = 2 mA; VCE = 5 V
Collector capacitance
CC
IE = ie = 0; VCB = 10 V; f = 1 MHz
Transition frequency
fT
IC = 10 mA; VCE = 5 V; f = 100 MHz
NF
IC = 200 ìA; VCE = 5 V; RS = 2 kÙ;
f = 1 kHz; B = 200 Hz
Noise figure
100
ICBO
VCE(sat)
Base to emitter saturation voltage
Unit
IE = 0; VCB = 20 V
BCW72
Collector-emitter saturation voltage
Max
ICBO
BCW72
DC current gain
Typ
550
mV
mV
700
2.5
mV
pF
100
MHz
10
dB
hFE Classification
TYPE
BCW71
BCW72
Marking
K1
K2
http://www.twtysemi.com
[email protected]wtysemi.com
4008-318-123
2 of 2