Transistors with built-in Resistor UNR1231 (UN1231), UNR1231A (UN1231A) Silicon NPN epitaxial planar type Unit: mm For amplification of the low frequency 2.5±0.1 (Emitter open) (Base open) Rating Unit VCBO 20 V 60 VCEO UNR1231A (1.0) 0.45±0.05 0.55±0.1 Symbol UNR1231A Collector-emitter voltage UNR1231 (0.85) 20 3 2 (2.5) V 1.25±0.05 Collector-base voltage UNR1231 4.1±0.2 2.0±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter 4.5±0.1 R 0.9 R 0.7 2.4±0.2 • High forward current transfer ratio hFE • M type mold package • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. 1.0±0.1 ■ Features (1.0) (1.5) 3.5±0.1 (0.4) 6.9±0.1 (1.5) 1 1: Base 2: Collector 3: Emitter M-A1 Package (2.5) 50 Collector current IC 0.7 A Peak collector current ICP 1.5 A Total power dissipation * PT 1.0 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Internal Connection Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the board thickness of 1.7 mm for the collector portion R1(1 kΩ) B C R2 (47 KΩ) E ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit VCBO IC = 10 µA, IE = 0 20 VCEO IC = 1 mA, IB = 0 20 Collector-base cutoff current (Emitter open) ICBO VCB = 15 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = 15 V, IB = 0 10 µA Emitter-base cutoff current (Collector open) IEBO VEB = 14 V, IC = 0 0.5 mA hFE VCE = 10 V, IC = 150 mA 2 100 VCE(sat) IC = 500 mA, IB = 5 mA 0.4 V Collector-base voltage UNR1231 (Emitter open) UNR1231A Collector-emitter voltage UNR1231 (Base open) 60 UNR1231A Forward current transfer ratio * Collector-emitter saturation voltage * V V 50 1 800 VCB = 20 V, IE = −20 mA, f = 200 MHz 55 µA Transition frequency fT Input resistance R1 0.7 1 1.3 MHz V Resistance ratio R1/R2 0.016 0.021 0.025 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Pulse measurement Note) The part numbers in the parenthesis show conventional part number. Publication date: October 2003 SJH00005BED 1 UNR1231, UNR1231A IC VCE 1.2 Ta = 25°C IB = 1.2 mA 1.0 1.2 Collector current IC (A) Total power dissipation PT (W) Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness 0.8 0.4 1.0 mA 0.8 mA 0.8 0.6 mA 0.6 0.4 mA 0.4 0.2 mA 0.2 0 0 0 40 80 120 160 0 Forward current transfer ratio hFE VCE = 10 V 2 000 Ta = 75°C 1 600 25°C 1 200 −25°C 800 400 0 0.01 0.1 4 6 8 10 12 Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob hFE IC 2 400 2 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) 1 Collector current IC (A) 2 VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) PT Ta 1.6 10 30 25 20 15 10 5 0 0.1 1 10 Collector-base voltage VCB (V) SJH00005BED 100 100 IC / IB = 100 10 Ta = 75°C 1 −25°C 25°C 0.1 0.01 0.01 0.1 1 Collector current IC (A) 10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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