UTRON UT62L12816 128K X 16 BIT LOW POWER CMOS SRAM Rev. 1.4 REVISION HISTORY REVISION Preliminary Rev. 0.5 DESCRIPTION 1. Original. Released Date Mar, 2001 1. The symbols CE# and OE# and WE# are revised as. CE and Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 1.3 Rev. 1.4 OE and WE . 2. Separate Industrial and Commercial SPEC. 3. Add access time 55ns range. 1. The extended temperature range is revised. -20℃~80℃B-20℃~85℃ 1. Revised Power supply a、 55ns (max.) for Vcc=2.7V~3.6V b、 70/100ns (max.) for Vcc=2.5V~3.6V 2. Revised block diagram 3. Revised DC ELECTRICAL CHARACTERISTICS： a、 Revised VIH as 2.2V b、 Revised standby current ISB1 of LL-version Typical : 3uAB2uA Maximum : 25uAB20uA 4. Revised AC ELECTRICAL CHARACTERISTICS： c、 Revised symbol name tHZB as tBHZ d、 Revised symbol name tLZB as tBLZ e、 Revised symbol name tPWB as tBW f、 Revised tBLZ as 10ns (min.) g、 Revised tOH as 10ns (min.) 5. Revised waveforms 6. Revised 48-pin TFBGA package outline dimension： h、 Rev. 1.1 ball diameter=0.3mm i、 Rev. 1.2 ball diameter=0.35mm Order information : add 100ns parts Add order information for lead free product UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 1 Jun 21, 2001 Aug 24, 2001 Apr 15, 2002 Aug 05, 2002 May 09, 2003 P80050 UTRON UT62L12816 128K X 16 BIT LOW POWER CMOS SRAM Rev. 1.4 FEATURES GENERAL DESCRIPTION The UT62L12816 is a 2,097,152-bit low power CMOS static random access memory organized as 131,072 words by 16 bits. Fast access time : 55ns (max.) for Vcc=2.7V~3.6V 70/100ns (max.) for Vcc=2.5V~3.6V CMOS low power operating Operating current : 45/35/25mA (Icc max.) Standby current : 20uA (typ.) L-version 2uA (typ.) LL-version Single 2.5V~3.6V power supply Operating temperature : Commercial : 0℃~70℃ Extended : -20℃~85℃ All TTL compatible inputs and outputs Fully static operation Three state outputs Data retention voltage : 1.5V (min.) Data byte control : LB (I/O1~I/O8) UB (I/O9~I/O16) Package : 44-pin 400mil TSOP-Ⅱ 48-pin 6mm × 8mm TFBGA The UT62L12816 operates from a single 2.5V~3.6V power supply and all inputs and outputs are fully TTL compatible. The UT62L12816 is designed for low power system applications. FUNCTIONAL BLOCK DIAGRAM A0-A16 DECODER 128K × 16 MEMORY ARRAY I/O DATA CIRCUIT COLUMN I/O Vcc Vss I/O1-I/O8 Lower Byte I/O9-I/O16 Upper Byte CE OE WE LB UB CONTROL CIRCUIT UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 2 P80050 UTRON UT62L12816 128K X 16 BIT LOW POWER CMOS SRAM Rev. 1.4 PIN CONFIGURATION 1 44 A5 43 42 A6 A2 2 3 A1 4 41 OE A0 40 UB CE 5 6 39 LB I/O1 7 I/O2 I/O3 38 37 I/O16 8 9 36 I/O14 I/O4 10 11 35 I/O13 34 Vss 12 33 32 Vcc I/O12 A4 A3 Vcc Vss I/O5 13 A LB OE A0 A1 A2 NC B I/O9 UB A3 A4 CE I/O1 C I/O10 I/O11 A5 A6 I/O2 I/O3 D Vss I/O12 NC A7 I/O4 Vcc E Vcc I/O13 NC A16 I/O5 Vss F I/O15 I/O14 A14 A15 I/O6 I/O7 G I/O16 NC A12 A13 WE I/O8 H NC A8 A9 A10 A11 NC 1 2 3 4 5 6 A7 I/O15 I/O6 14 31 I/O11 I/O7 15 30 I/O10 I/O8 29 I/O9 28 27 NC A8 WE 16 17 A16 18 A15 A14 19 20 26 A9 25 A10 A13 21 A12 22 24 23 NC A11 TFBGA TSOP II PIN DESCRIPTION SYMBOL A0 - A16 I/O1 - I/O16 CE DESCRIPTION Address Inputs Data Inputs/Outputs Chip Enable Input WE OE Output Enable Input LB UB VCC VSS NC Write Enable Input Lower Byte Control Upper Byte Control Power Supply Ground No Connection UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 3 P80050 UTRON UT62L12816 128K X 16 BIT LOW POWER CMOS SRAM Rev. 1.4 TRUTH TABLE MODE CE OE WE LB UB H X L L L L L L L L X X H H L L L X X X X X H H H H H L L L X H L X L H L L H L X H X L H L L H L L Standby Output Disable Read Write Note: I/O OPERATION I/O1-I/O8 I/O9-I/O16 High – Z High – Z High – Z High – Z High – Z High – Z High – Z High – Z High – Z DOUT High – Z DOUT DOUT DOUT DIN High – Z High – Z DIN DIN DIN SUPPLY CURRENT ISB, ISB1 ICC,ICC1,ICC2 ICC,ICC1,ICC2 ICC,ICC1,ICC2 H = VIH, L=VIL, X = Don't care. ABSOLUTE MAXIMUM RATINGS* PARAMETER Terminal Voltage with Respect to VSS Commercial Operating Temperature Extended Storage Temperature Power Dissipation DC Output Current Soldering Temperature (under 10 secs) SYMBOL VTERM TA TA TSTG PD IOUT Tsolder RATING -0.5 to 4.6 0 to 70 -20 to 85 -65 to +150 1 50 260 UNIT V ℃ ℃ ℃ W mA ℃ *Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability. DC ELECTRICAL CHARACTERISTICS (VCC = 2.5V~3.6V, TA = 0℃ to 70℃ / -20℃ to 85℃(E)) PARAMETER SYMBOL Power Voltage VCC Input High Voltage Input Low Voltage Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage VIH *2 VIL ILI ILO VOH VOL Operating Power Supply Current ICC Average Operation Current Standby Current (TTL) Standby Current (CMOS) TEST CONDITION VSS ≦VIN ≦VCC VSS ≦VI/O ≦VCC; Output Disable IOH= -1mA IOL= 2.1mA Cycle time=min, 100%duty 55 MIN. 2.7 2.5 2.2 -0.2 -1 -1 2.2 - II/O=0mA, CE =VIL 70 - 25 35 100 100%duty, II/O=0mA CE ≦0.2V, TCycle= 1µs other pins at 0.2V or Vcc-0.2V TCycle= 500ns - 20 4 25 5 - 8 10 CE =VIH, other pins =VIL or VIH - 0.3 0.5 mA - 20 2 80 20 µA µA 55 70/100 *1 Icc1 Icc2 ISB ISB1 CE =VCC-0.2V other pins at 0.2V or Vcc-0.2V Notes: 1. Overshoot : Vcc+3.0v for pulse width less than 10ns. 2. Undershoot : Vss-3.0v for pulse width less than 10ns. 3. Overshoot and Undershoot are sampled, not 100% tested. UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 4 -L -LL TYP. 3.0 -30 MAX. 3.6 3.6 VCC+0.3 0.6 1 1 0.4 45 UNIT V V V V µA µA V V mA mA mA mA mA P80050 UTRON UT62L12816 128K X 16 BIT LOW POWER CMOS SRAM Rev. 1.4 CAPACITANCE (TA=25℃, f=1.0MHz) PARAMETER Input Capacitance Input/Output Capacitance SYMBOL CIN CI/O MIN. - MAX 6 8 UNIT pF pF Note : These parameters are guaranteed by device characterization, but not production tested. AC TEST CONDITIONS Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Levels Output Load 0V to 3.0V 5ns 1.5V CL = 30pF, IOH/IOL = -1mA/2.1mA AC ELECTRICAL CHARACTERISTICS ( TA =0℃ to 70℃ / -20℃ to 85℃(E)) (1) READ CYCLE PARAMETER Read Cycle Time Address Access Time Chip Enable Access Time Output Enable Access Time Chip Enable to Output in Low Z Output Enable to Output in Low Z Chip Disable to Output in High Z Output Disable to Output in High Z Output Hold from Address Change LB , UB Access Time LB , UB to High-Z Output LB , UB to Low-Z Output UT62L12816-55 SYMBOL VCC =2.7V~3.6V tRC tAA tACE tOE tCLZ* tOLZ* tCHZ* tOHZ* tOH tBA tBHZ tBLZ MIN. 55 10 5 10 10 UT62L12816-70 UT62L12816-100 VCC =2.5V~3.6V MAX. MIN. MAX. 70 55 70 55 70 30 35 10 5 20 25 20 25 10 55 70 25 30 10 - VCC =2.5V~3.6V MIN. MAX. 100 100 100 50 10 5 30 30 10 100 40 10 - UNIT ns ns ns ns ns ns ns ns ns ns ns ns (2) WRITE CYCLE PARAMETER Write Cycle Time Address Valid to End of Write Chip Enable to End of Write Address Set-up Time Write Pulse Width Write Recovery Time Data to Write Time Overlap Data Hold from End of Write Time Output Active from End of Write Write to Output in High Z UT62L12816-55 SYMBOL VCC =2.7V~3.6V tWC tAW tCW tAS tWP tWR tDW tDH tOW* tWHZ* tBW MIN. 55 50 50 0 45 0 25 0 5 45 MAX. 30 - UT62L12816-70 UT62L12816-100 VCC =2.5V~3.6V MIN. MAX. 70 60 60 0 55 0 30 0 5 30 60 - VCC =2.5V~3.6V MIN. MAX. 100 80 80 0 70 0 40 0 5 40 80 - LB , UB Valid to End of Write *These parameters are guaranteed by device characterization, but not production tested. UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 5 UNIT ns ns ns ns ns ns ns ns ns ns ns P80050 UTRON UT62L12816 128K X 16 BIT LOW POWER CMOS SRAM Rev. 1.4 TIMING WAVEFORMS READ CYCLE 1 (Address Controlled) (1,2) tRC Address tAA tOH Dout tOH Previous data valid Data Valid READ CYCLE 2 ( CE and OE Controlled) (1,3,4,5) t RC Address tAA CE tACE tBA LB , UB t BHZ tBLZ OE t CHZ tOE tCLZ tOHZ t OH tOLZ Dout High-Z High-Z Data Valid Notes : 1. WE is high for read cycle. 2.Device is continuously selected OE =low, CE =low, LB or UB =low. 3.Address must be valid prior to or coincident with CE =low, LB or UB =low transition; otherwise tAA is the limiting parameter. 4.tCLZ, tBLZ, tOLZ, tCHZ, tBHZ and tOHZ are specified with CL=5pF. Transition is measured±500mV from steady state. 5.At any given temperature and voltage condition, tCHZ is less than tCLZ, tBHZ is less than tBLZ, tOHZ is less than tOLZ. UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 6 P80050 UTRON UT62L12816 128K X 16 BIT LOW POWER CMOS SRAM Rev. 1.4 WRITE CYCLE 1 ( WE Controlled) (1,2,3,5,6) tW C Address tAW CE t CW t AS tW P tW R WE tBW LB , UB t W HZ t OW High-Z Dout (4) tDW tDH (4) Din Data Valid WRITE CYCLE 2 ( CE Controlled) (1,2,5,6) tW C A ddress tA W CE tW R tA S tC W tW P WE tB W LB , U B tW H Z D out H igh-Z (4) tD W tD H D in D ata V alid UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 7 P80050 UTRON UT62L12816 128K X 16 BIT LOW POWER CMOS SRAM Rev. 1.4 WRITE CYCLE 3 ( LB , UB Controlled) (1,2,5,6) tWC Address tAW CE tAS tCW tWR tWP WE tBW LB , UB tWHZ High-Z Dout tDW Din tDH Data Valid Notes : 1. WE , CE , LB , UB must be high during all address transitions. 2.A write occurs during the overlap of a low CE , low WE , LB or UB =low. 3.During a WE controlled write cycle with OE low, tWP must be greater than tWHZ+tDW to allow the drivers to turn off and data to be placed on the bus. 4.During this period, I/O pins are in the output state, and input signals must not be applied. 5.If the CE , LB , UB low transition occurs simultaneously with or after WE low transition, the outputs remain in a high impedance state. 6.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state. UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 8 P80050 UTRON UT62L12816 128K X 16 BIT LOW POWER CMOS SRAM Rev. 1.4 DATA RETENTION CHARACTERISTICS (TA = 0℃ to 70℃ / -20℃ to 85℃(E)) PARAMETER Vcc for Data Retention SYMBOL VDR Data Retention Current IDR Chip Disable to Data Retention Time Recovery Time tCDR TEST CONDITION CE ≧ VCC-0.2V Vcc=1.5V -L - LL CE ≧ VCC-0.2V See Data Retention Waveforms (below) tR MIN. 1.5 TYP. - MAX. 3.6 UNIT V - 1 0.5 50 20 µA µA 0 - - ms 5 - - ms DATA RETENTION WAVEFORM Low Vcc Data Retention Waveform (1) ( CE controlled) VDR ≧ 1.5V VCC Vcc(min.) Vcc(min.) tCDR CE VIH tR CE ≧ VCC-0.2V VIH Low Vcc Data Retention Waveform (2) ( LB , UB controlled) VDR ≧ 1.5V VCC Vcc(min.) Vcc(min.) tCDR LB,UB VIH tR LB,UB ≧ VCC-0.2V UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 9 VIH P80050 UTRON UT62L12816 128K X 16 BIT LOW POWER CMOS SRAM Rev. 1.4 PACKAGE OUTLINE DIMENSION θ 44-pin 400mil TSOP-Ⅱ Package Outline Dimension SYMBOLS A A1 A2 b c D E E1 e L 2D y Θ DIMENSIONS IN MILLMETERS MIN. NOM. MAX. 1.00 1.20 0.05 0.15 0.95 1.00 1.05 0.30 0.35 0.45 0.12 0.21 18.313 18.415 18.517 11.854 11.836 11.838 10.058 10.180 10.282 0.800 0.40 0.50 0.60 0.805 0.00 0.076 o o 5 0 DIMENSIONS IN INCHS MIN. NOM. MAX. 0.039 0.047 0.002 0.006 0.037 0.039 0.041 0.012 0.014 0.018 0.0047 0.083 0.721 0.725 0.728 0.460 0.466 0.470 0.398 0.400 0.404 0.0315 0.0157 0.020 0.0236 0.0317 0.000 0.003 o o 0 5 UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 10 P80050 UTRON Rev. 1.4 UT62L12816 128K X 16 BIT LOW POWER CMOS SRAM 48-pin 6mm × 8mm TFBGA Package Outline Dimension UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 11 P80050 UTRON UT62L12816 128K X 16 BIT LOW POWER CMOS SRAM Rev. 1.4 ORDERING INFORMATION COMMERCIAL TEMPERATURE PART NO. UT62L12816MC-55L UT62L12816MC-55LL UT62L12816MC-70L UT62L12816MC-70LL UT62L12816MC-100L UT62L12816MC-100LL UT62L12816BS-55L UT62L12816BS-55LL UT62L12816BS-70L UT62L12816BS-70LL UT62L12816BS-100L UT62L12816BS-100LL ACCESS TIME (ns) 55 55 70 70 100 100 55 55 70 70 100 100 STANDBY CURRENT (µA) TYP. 20 2 20 2 20 2 20 2 20 2 20 2 ACCESS TIME (ns) 55 55 70 70 100 100 55 55 70 70 100 100 STANDBY CURRENT (µA) TYP. 20 2 20 2 20 2 20 2 20 2 20 2 PACKAGE 44 PIN TSOP-Ⅱ 44 PIN TSOP-Ⅱ 44 PIN TSOP-Ⅱ 44 PIN TSOP-Ⅱ 44 PIN TSOP-Ⅱ 44 PIN TSOP-Ⅱ 48 PIN TFBGA 48 PIN TFBGA 48 PIN TFBGA 48 PIN TFBGA 48 PIN TFBGA 48 PIN TFBGA EXTENDED TEMPERATURE PART NO. UT62L12816MC-55LE UT62L12816MC-55LLE UT62L12816MC-70LE UT62L12816MC-70LLE UT62L12816MC-100LE UT62L12816MC-100LLE UT62L12816BS-55LE UT62L12816BS-55LLE UT62L12816BS-70LE UT62L12816BS-70LLE UT62L12816BS-100LE UT62L12816BS-100LLE UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 12 PACKAGE 44 PIN TSOP-Ⅱ 44 PIN TSOP-Ⅱ 44 PIN TSOP-Ⅱ 44 PIN TSOP-Ⅱ 44 PIN TSOP-Ⅱ 44 PIN TSOP-Ⅱ 48 PIN TFBGA 48 PIN TFBGA 48 PIN TFBGA 48 PIN TFBGA 48 PIN TFBGA 48 PIN TFBGA P80050 UTRON UT62L12816 128K X 16 BIT LOW POWER CMOS SRAM Rev. 1.4 ORDERING INFORMATION (for lead free product) COMMERCIAL TEMPERATURE PART NO. UT62L12816MCL-55L UT62L12816MCL-55LL UT62L12816MCL-70L UT62L12816MCL-70LL UT62L12816MCL-100L UT62L12816MCL-100LL UT62L12816BSL-55L UT62L12816BSL-55LL UT62L12816BSL-70L UT62L12816BSL-70LL UT62L12816BSL-100L UT62L12816BSL-100LL ACCESS TIME (ns) 55 55 70 70 100 100 55 55 70 70 100 100 STANDBY CURRENT (µA) TYP. 20 2 20 2 20 2 20 2 20 2 20 2 ACCESS TIME (ns) 55 55 70 70 100 100 55 55 70 70 100 100 STANDBY CURRENT (µA) TYP. 20 2 20 2 20 2 20 2 20 2 20 2 PACKAGE 44 PIN TSOP-Ⅱ 44 PIN TSOP-Ⅱ 44 PIN TSOP-Ⅱ 44 PIN TSOP-Ⅱ 44 PIN TSOP-Ⅱ 44 PIN TSOP-Ⅱ 48 PIN TFBGA 48 PIN TFBGA 48 PIN TFBGA 48 PIN TFBGA 48 PIN TFBGA 48 PIN TFBGA EXTENDED TEMPERATURE PART NO. UT62L12816MCL-55LE UT62L12816MCL-55LLE UT62L12816MCL-70LE UT62L12816MCL-70LLE UT62L12816MCL-100LE UT62L12816MCL-100LLE UT62L12816BSL-55LE UT62L12816BSL-55LLE UT62L12816BSL-70LE UT62L12816BSL-70LLE UT62L12816BSL-100LE UT62L12816BSL-100LLE UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 13 PACKAGE 44 PIN TSOP-Ⅱ 44 PIN TSOP-Ⅱ 44 PIN TSOP-Ⅱ 44 PIN TSOP-Ⅱ 44 PIN TSOP-Ⅱ 44 PIN TSOP-Ⅱ 48 PIN TFBGA 48 PIN TFBGA 48 PIN TFBGA 48 PIN TFBGA 48 PIN TFBGA 48 PIN TFBGA P80050 UTRON Rev. 1.4 UT62L12816 128K X 16 BIT LOW POWER CMOS SRAM THIS PAGE IS LEFT BLANK INTENTIONALLY. UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 14 P80050