ETC DK13..FX

DK13..FX
DK13..FX
Fast Switching Thyristor
Replaces July 2001 version, DS4411-3.0
DS4411-3.1 July 2002
FEATURES
KEY PARAMETERS
■ Low Switching Losses At High Frequency
VDRM
1200V
■ Fully Characterised For Operation Up To 20kHz
IT(RMS)
130A
ITSM
1600A
dVdt
200V/µs
dI/dt
500A/µs
tq
15µs
APPLICATIONS
■ High Power Inverters And Choppers
■ UPS
■ AC Motor Drives
■ Induction Heating
■ Cycloconverters
VOLTAGE RATINGS
Type Number
Repetitive Peak
Voltages
VDRM VRRM
V
DK13 12FX K or M
DK13 10FX K or M
1200
1000
Conditions
VRSM = VRRM + 100V
IDRM = IRRM = 15mA
at VRRM or VDRM & Tvj
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, then:-
Outline type code: TO94
See Package Details for further information.
Fig. 1 Package outline
Add K to type number for 1/2" 20 UNF thread, e.g. DK13 10FXK
or
Add M to type number for M12 thread, e.g. DK13 10FXM.
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
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DK13..FX
CURRENT RATINGS
Symbol
Parameter
Conditions
IT(AV)
Mean on-state current
Half wave resistive load, Tcase = 80oC
IT(RMS)
RMS value
Tcase = 80oC
Max.
Units
83
A
130
A
SURGE RATINGS
Parameter
Symbol
ITSM
I2t
Surge (non-repetitive) on-state current
I2t for fusing
Conditions
Max.
Units
tp ≥ 10ms half sine; Tcase = 125oC
1.6
kA
VR = 0% VRRM - 1/4 sine
12.8 x 103
A2s
THERMAL AND MECHANICAL DATA
Conditions
Parameter
Symbol
Min.
Max.
Units
Rth(j-c)
Thermal resistance - junction to case
dc
-
0.24
o
Rth(c-h)
Thermal resistance - case to heatsink
Mounting torque 15.0Nm
with mounting compound
-
0.08
o
On-state (conducting)
-
125
o
Reverse (blocking)
-
125
o
Storage temperature range
-40
150
o
Mounting torque
12.0
15.0
Tvj
Tstg
-
C/W
C/W
C
Virtual junction temperature
C
C
Nm
MEASUREMENT OF RECOVERED CHARGE - QRA1
Measurement of QRA1 : QRA1 = IRR x tRR
2
ITM
QRA1
tp = 1ms
dIR/dt
0.5x IRR
IRR
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DK13..FX
DYNAMIC CHARACTERISTICS
Symbol
Parameter
Conditions
Min.
Max.
Units
Maximum on-state voltage
At 300A peak, Tcase = 25oC
-
2.35
V
Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125oC
-
15
mA
dV/dt
Maximum linear rate of rise of off-state voltage
Linear to 60% VDRM Tj = 125oC, Gate open circuit
-
200
V/µs
Gate source 20V, 20Ω
Repetitive 50Hz
-
500
A/µs
dI/dt
Rate of rise of on-state current
tr < 0.5µs, Tj = 125˚C
Non-repetitive
-
800
A/µs
VTM
IRRM/IDRM
Threshold voltage
At Tvj = 125oC
-
1.5
V
rT
On-state slope resistance
At Tvj = 125oC
-
2.83
mΩ
tgd
Delay time
-
5
µs
Total turn-on time
Tj = 25˚C, IT = 50A,
VD = 300V, IG = 1A,
dI/dt =50A/µs, dIG/dt = 1A/µs
-
3
µs
IH
Holding current
Tj = 25oC, ITM = 1A, VD = 12V
60*
-
mA
15
µs
Turn-off time
Tj = 125˚C, IT = 100A, VR = 50V,
tq code: X
dV/dt = 200V/µs (Linear to 60% VDRM),
dIR/dt = 30A/µs, Gate open circuit
-
tq
Typ.
Max.
Units
VT(TO)
t(ON)TOT
*Typical value.
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Conditions
VGT
Gate trigger voltage
VDRM = 12V, Tcase = 25oC, RL = 6Ω
-
3.0
V
IGT
Gate trigger current
VDRM = 12V, Tcase = 25oC, RL = 6Ω
-
200
mA
VGD
Gate non-trigger voltage
At VDRM Tcase = 125oC, RL = 1kΩ
-
0.2
V
-
5.0
V
-
4
A
VRGM
Peak reverse gate voltage
IFGM
Peak forward gate current
PGM
Peak gate power
-
16
W
PG(AV)
Mean gate power
-
3.0
W
Anode positive with respect to cathode
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DK13..FX
CURVES
Fig.2 Maximum (limit) on-state characteristics
Fig.3 Gate characteristics
Fig.4 Typical recovered charge (for a device rated VDRM = 600V, tq = 10µs)
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DK13..FX
Fig.5 Transient thermal impedance - junction to case
Fig.6 Non-repetitive sub-cycle surge on-state current and I2t rating
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DK13..FX
NOTES:
1. VD ≤ 600V.
2. VR ≤ 10V.
3. R.C Snubber, C = 0.22µF, R = 4.7Ω
Fig.7 Energy per pulse for sinusoidal pulses
NOTES:
1. VD ≤ 600V.
2. VR ≤ 10V.
3. R.C Snubber, C = 0.22µF, R = 4.7Ω
Fig.8 Maximum allowable peak on-state current vs pulse width for Tcase = 65˚C
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DK13..FX
NOTES:
1. VD ≤ 600V.
2. VR ≤ 10V.
3. R.C Snubber, C = 0.22µF, R = 4.7Ω
Fig.9 Maximum allowable peak on-state current vs pulse width for Tcase = 90˚C
NOTES:
1. dI/dt = 25A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
Fig.10 Energy per pulse for trapezoidal pulses
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DK13..FX
NOTES:
1. dI/dt = 25A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
Fig.11 Maximum allowable peak on-state current vs pulse width for Tcase = 65˚C
NOTES:
1. dI/dt = 25A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
Fig.12 Maximum allowable peak on-state current vs pulse width for Tcase = 90˚C
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DK13..FX
NOTES:
1. dI/dt = 50A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
Fig.13 Energy per pulse for trapezoidal pulses
NOTES:
1. dI/dt = 50A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
Fig.14 Maximum allowable peak on-state current vs pulse width for Tcase = 65˚C
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DK13..FX
NOTES:
1. dI/dt = 50A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
Fig.15 Maximum allowable peak on-state current vs pulse width for Tcase = 65˚C
NOTES:
1. dI/dt = 100A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
Fig.16 Energy per pulse for trapezoidal pulses
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DK13..FX
NOTES:
1. dI/dt = 100A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
Fig.17 Maximum allowable peak on-state current vs pulse width for Tcase = 65˚C
NOTES:
1. dI/dt = 100A/µs
2. VD ≤ 600V.
3. VR ≤ 10V.
4. R.C Snubber, C = 0.22µF, R = 4.7Ω
Fig.18 Maximum allowable peak on-state current vs pulse width for Tcase = 90˚C
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DK13..FX
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Ø4
15 max
Ø8.4 ± 0.3
8 min
210 ± 10
160 ± 10
30 max
Hex. 27AF
8 min
M = M12
K = 1/2" 20 UNF
K = 20.6 ± 0.6
M = 18.0 ± 0.5
Nominal weight: 120g
Mounting torque: 15Nm ±10%
Gate lead colour: White
Cathode lead colour: Red
Package outine type code: TO94
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
SALES OFFICES
Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19.
France: Tel: +33 (0)2 47 55 75 52. Fax: +33 (0)2 47 55 75 59.
Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901.
Fax: +44 (0)1522 500020
North America: Tel: (440) 259-2060. Fax: (440) 259-2059. Tel: (949) 733-3005. Fax: (949) 733-2986.
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
Datasheet Annotations:
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Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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