ETC XN04609|XN4609

Composite Transistors
XN04609 (XN4609)
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
Unit: mm
2.90+0.20
–0.05
1.9±0.1
(0.95) (0.95)
■ Features
3
2
1
(0.65)
• Two elements incorporated into one package
• Reduction of the mounting area and assembly cost by one half
0.30+0.10
–0.05
0.50+0.10
–0.05
■ Basic Part Number
Tr1
1.1+0.2
–0.1
Symbol
Rating
Unit
Collector-base voltage
(Emitter open)
VCBO
25
V
Collector-emitter voltage
(Base open)
VCEO
20
V
Emitter-base voltage
(Collector open)
VEBO
12
V
IC
0.5
A
Collector current
Tr2
Overall
Peak collector current
ICP
1
A
Collector-base voltage
(Emitter open)
VCBO
−60
V
Collector-emitter voltage
(Base open)
VCEO
−50
V
Emitter-base voltage
(Collector open)
VEBO
−7
V
Collector current
IC
−100
mA
Peak collector current
ICP
−200
mA
Total power dissipation
PT
300
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
0 to 0.1
■ Absolute Maximum Ratings Ta = 25°C
1: Collector (Tr1)
2: Base (Tr2)
3: Emitter (Tr2)
EIAJ: SC-74
1.1+0.3
–0.1
10˚
• 2SD1328 + 2SB0709A (2SB709A)
Parameter
0.4±0.2
6
5˚
5
1.50+0.25
–0.05
4
0.16+0.10
–0.06
2.8+0.2
–0.3
For amplification of low-frequency output (Tr1)
For general amplification (Tr2)
4: Collector (Tr2)
5: Base (Tr1)
6: Emitter (Tr1)
Mini6-G1 Package
Marking Symbol: 5F
Internal Connection
4
5
Tr2
3
6
Tr1
2
1
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2004
SJJ00086BED
1
XN04609
■ Electrical Characteristics Ta = 25°C ± 3°C
• Tr1
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
IC = 10 µA, IE = 0
25
Collector-emitter voltage (Base open)
VCEO
IC = 1 mA, IB = 0
20
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 µA, IC = 0
12
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 25 V, IE = 0
Forward current transfer ratio *1
hFE1
VCE = 2 V, IC = 0.5 A
200
hFE2
VCE = 2 V, IC = 1 A
60
Collector-emitter saturation voltage *1
Base-emitter saturation voltage
*1
Transition frequency
Conditions
VCE(sat)
IC = 0.5 A, IB = 20 mA
VBE(sat)
IC = 0.5 A, IB = 20 mA
fT
Collector output capacitance
(Common base, input open circuited)
Cob
ON resistance *2
Ron
Min
Typ
Max
Unit
V
0.13
0.1
µA
800

0.40
V
1.2
V
VCB = 10 V, IE = −50 mA, f = 200 MHz
200
MHz
VCB = 10 V, IE = 0, f = 1 MHz
10
pF
1.0
Ω
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
1 kΩ
*2: Ron test circuit
IB = 1 mA
f = 1 kHz
V = 0.3 V
VB VV
Ron =
• Tr2
VA
VB × 1 000
(Ω)
V A − VB
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
IC = −10 µA, IE = 0
−60
V
Collector-emitter voltage (Base open)
VCEO
IC = −2 mA, IB = 0
−50
V
Emitter-base voltage (Collector open)
VEBO
IE = −10 µA, IC = 0
−7
Collector-base cutoff current (Emitter open)
ICBO
VCB = −20 V, IE = 0
Collector-emitter cutoff current (Base open)
ICEO
VCE = −10 V, IB = 0
Forward current transfer ratio
hFE
VCE = −10 V, IC = −2 mA
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
VCE(sat)
fT
Cob
Conditions
IC = −100 mA, IB = −10 mA
Min
Typ
Max
Unit
V
160
− 0.1
µA
−100
µA
460

− 0.3
V
VCB = −10 V, IE = 1 mA, f = 200 MHz
80
MHz
VCB = −10 V, IE = 0, f = 1 MHz
2.7
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2
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XN04609
Common characteristics chart
PT  Ta
Total power dissipation PT (mW)
500
400
300
200
100
0
0
40
80
120
160
Ambient temperature Ta (°C)
Characteristics charts of Tr1
VCE(sat)  IC
Ta = 25°C
IB = 4.0 mA
Collector current IC (A)
3.5 mA
3.0 mA
0.8
2.5 mA
2.0 mA
0.6
1.5 mA
0.4
1.0 mA
0.2
0
0.5 mA
0
1
2
3
4
5
6
10
1
Ta = 75°C
10−1
10−2
10−2
VCE = 2 V
Transition frequency fT (MHz)
Forward current transfer ratio hFE
Ta = 75°C
25°C
−25°C
200
10−1
10
25°C
1 Ta = −25°C
75°C
10−1
10−2
10−2
10
1
Collector current IC (A)
10
VCB = 10 V
Ta = 25°C
200
100
−10
Emitter current IE (mA)
SJJ00086BED
1
10
Cob  VCB
300
0
−1
10−1
Collector current IC (A)
fT  I E
800
0
10−2
1
400
1 000
400
10−1
IC / IB = 10
Collector current IC (A)
hFE  IC
600
25°C
−25°C
Collector-emitter voltage VCE (V)
1 200
VBE(sat)  IC
102
IC / IB = 25
−102
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
1.0
102
Base-emitter saturation voltage VBE(sat) (V)
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
1.2
24
f = 1 MHz
IE = 0
Ta = 25°C
20
16
12
8
4
0
1
10
102
Collector-base voltage VCB (V)
3
XN04609
Characteristics charts of Tr2
IC  VCE
IC  I B
Ta = 25°C
−150 µA
−20
−100 µA
−10
−4
−8
−12
−40
−250
−200
−30
−150
−20
−100
−10
−50 µA
0
−300
Base current IB (µA)
−30
0
Collector current IC (mA)
0
−16
−50
0
Collector-emitter voltage VCE (V)
Collector current IC (mA)
−25°C
−160
−120
Collector-emitter saturation voltage VCE(sat) (V)
VCE = −5 V
Ta = 75°C
−80
0
− 0.4
− 0.8
−1.2
−10
−1.6
−2.0
25°C
VCB = −10 V
Ta = 25°C
120
100
80
60
40
20
0
10−1
1
10
Emitter current IE (mA)
−102
500
400
Ta = 75°C
300
−25°C
100
0
−1
−103
102
25°C
200
−10
−102
−103
Collector current IC (mA)
Cob  VCB
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
140
−1.6
VCE = –10 V
Collector current IC (mA)
fT  I E
Transition frequency fT (MHz)
Ta = 75°C
−10
−1.2
hFE  IC
−25°C
−10−3
−1
− 0.8
600
IC / IB = 10
−1
Base-emitter voltage VBE (V)
160
− 0.4
0
Base-emitter voltage VBE (V)
−10−2
0
0
−400
−10−1
−40
4
−300
VCE(sat)  IC
25°C
−200
−200
Base current IB (µA)
IC  VBE
−240
−100
NF  IE
6
8
f = 1 MHz
IE = 0
Ta = 25°C
7
6
5
4
3
VCB = −5 V
f = 1 kHz
Rg = 2 kΩ
Ta = 25°C
5
Noise figure NF (dB)
Collector current IC (mA)
−200 µA
VCE = −5 V
Ta = 25°C
−350
−50
−250 µA
−40
−400
VCE = −5 V
Ta = 25°C
IB = −300 µA
−50
IB  VBE
−60
Forward current transfer ratio hFE
−60
4
3
2
2
1
1
0
−1
−10
−102
Collector-base voltage VCB (V)
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0
10−2
10−1
1
Emitter current IE (mA)
10
XN04609
NF  IE
20
18
h parameter  IE
VCB = −5 V
Rg = 50 kΩ
Ta = 25°C
hfe
hfe
16
102
IE = 2 mA
f = 270 Hz
Ta = 25°C
102
12
f = 100 Hz
10
8
1 kHz
hoe (µS)
10
hoe (µS)
10
10 kHz
6
hie (kΩ)
4
2
0
10−1
h parameter
14
h parameter
Noise figure NF (dB)
h parameter  VCE
1
Emitter current IE (mA)
10
1
10−1
hre
(×10−4)
hre (×10−4)
VCE = −5 V
f = 270 Hz
Ta = 25°C
1
Emitter current IE (mA)
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10
hie (kΩ)
1
−1
−10
−102
Collector-emitter voltage VCE (V)
5
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and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP