DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Product specification Supersedes data of 2001 Apr 17 2001 May 15 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-200 FEATURES PINNING - SOT502A • High power gain PIN DESCRIPTION • Easy power control 1 drain • Excellent ruggedness 2 gate • Source on mounting base eliminates DC isolators, reducing common mode inductance. 3 source, connected to flange APPLICATIONS handbook, halfpage • Avionics transmitter applications in the 1030 to 1090 MHz frequency range. 1 DESCRIPTION 3 2 Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange. Top view MBK394 Fig.1 Simplified outline SOT502A. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION Pulsed class-AB; tp = 50 µs; δ = 2 % f (MHz) VDS (V) PL (W) Gp (dB) ηD (%) 1030 to 1090 36 200 >13 >45 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 75 V VGS gate-source voltage − ±22 V Ptot total power dissipation − 700 W Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C 2001 May 15 Th ≤ 25 °C; tp = 50 µs; δ = 2 % 2 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-200 THERMAL CHARACTERISTICS SYMBOL Zth j-h PARAMETER CONDITIONS VALUE Th = 25 °C; note 1 thermal impedance from junction to heatsink 0.15 UNIT K/W Note 1. Thermal resistance is determined under RF operating conditions; tp = 50 µs, δ = 10 %. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 3 mA 75 − − V VGSth gate-source threshold voltage VDS = 10 V; ID = 300 mA 4 − 5 V IDSS drain-source leakage current VGS = 0; VDS = 36 V − − 1 µA IDSX on-state drain current VGS = VGSth + 9 V; VDS = 10 V 45 − − A IGSS gate leakage current VGS = ±20 V; VDS = 0 − − 1 µA gfs forward transconductance VDS = 10 V; ID = 10 A − 9 − S RDSon drain-source on-state resistance VGS = 9 V; ID = 10 A − 60 − mΩ APPLICATION INFORMATION RF performance in a common source class-AB circuit. Th = 25 °C; Zth mb-h = 0.15 K/W, unless otherwise specified. MODE OF OPERATION Pulsed class-AB; tp = 50 µs; δ = 2 % 2001 May 15 f (MHz) VDS (V) IDQ (mA) PL (W) Gp (dB) ηD (%) 1030 to 1090 36 150 200 >13 >45 3 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-200 MGW033 20 handbook, halfpage Gp (dB) handbook, halfpage PL (W) ηD (%) Gp MGW034 250 80 200 15 60 150 10 40 ηD 100 5 20 50 0 50 0 100 150 0 250 200 PL (W) 0 0 2 4 6 VDS = 36 V; IDQ = 150 mA; f = 1060 MHz; tp = 50 µs; δ = 2 %. VDS = 36 V; IDQ = 150 mA; f = 1060 MHz; tp = 50 µs; δ = 2 %. Fig.2 Fig.3 Power gain and efficiency as functions of load power; typical values. MGW035 20 PD (W) Load power as a function of drive power; typical values. MGW036 250 handbook, halfpage handbook, halfpage Gp (dB) PL (W) I DQ = 1.5 A 8 Gp (dB) 16 200 16 20 150 mA Gp 12 150 8 100 4 50 12 PL 8 4 0 0 0 50 0 100 150 200 250 PL (W) 0 1 2 3 5 VGS (V) VDS = 36 V; f = 1060 MHz; tp = 50 µs; δ = 2 %. VDS = 36 V; IDQ = 150 mA; PD = 5.5 W; f = 1060 MHz; tp = 50 µs; δ = 2 %. Fig.4 Fig.5 Power gain as a function of load power; typical values. 2001 May 15 4 4 Load power and power gain as functions of gate-source voltage; typical values. Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-200 MGW037 20 handbook, halfpage Gp (dB) 80 Zi (Ω) ηD (%) Gp MGW038 5 handbook, halfpage xi 4 15 60 ri 3 ηD 10 40 2 5 20 1 0 1020 1040 1060 1080 0 1100 f (MHz) 0 1020 1040 1060 VDS = 36 V; IDQ = 150 mA; PL = 200 W; tp = 50 µs; δ = 2 %. VDS = 36 V; IDQ = 150 mA; PL = 200 W; tp = 50 µs; δ = 2 %. Fig.6 Fig.7 Power gain and efficiency as functions of frequency; typical values. MGW039 4 handbook, halfpage ZL (Ω) 2 RL 0 XL −2 −4 1020 1040 1060 1080 1100 f (MHz) VDS = 36 V; IDQ = 150 mA; PL = 200 W; tp = 50 µs; δ = 2 %. Fig.8 Load impedance as a function of frequency (series components); typical values. 2001 May 15 5 1080 1100 f (MHz) Input impedance as a function of frequency (series components); typical values. Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-200 40 handbook, full pagewidth 40 60 C6 + C10 C5 C9 + R2 C4 C3 C11 C8 R1 L1 C7 C1 C2 MGW032 Dimensions in mm. The components are situated on one side of the copper-clad Duroid printed-circuit board with εr = 6.2 and thickness 0.64 mm. The other side is unetched and serves as a ground plane. Fig.9 Component layout for 1030 to 1090 MHz test circuit. 2001 May 15 6 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-200 List of components (see Fig.9) COMPONENT DESCRIPTION VALUE C1 multilayer ceramic chip capacitor; note 1 39 pF C2 multilayer ceramic chip capacitor; note 2 4.3 pF C3 multilayer ceramic chip capacitor; note 1 11 pF C4, C7 multilayer ceramic chip capacitor; note 1 62 pF C5 multilayer ceramic chip capacitor; note 1 100 pF C6 electrolytic capacitor 47 µF; 20 V C8 multilayer ceramic chip capacitor; note 2 20 pF C9 multilayer ceramic chip capacitor; note 1 47 pF C10 multilayer ceramic chip capacitor; note 3 1.2 nF C11 electrolytic capacitor 47 µF; 63 V L1 Ω-shaped enamelled 1 mm copper wire R1 metal film resistor 301 Ω R2 SMD0508 resistor 18 Ω Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. American Technical Ceramics type 100B or capacitor of same quality. 3. American Technical Ceramics type 700 or capacitor of same quality. 2001 May 15 7 DIMENSIONS length = 38 mm Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-200 PACKAGE OUTLINE Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.99 12.83 12.57 0.15 0.08 inches 0.186 0.157 0.505 0.006 0.495 0.003 OUTLINE VERSION D E E1 F H L p Q q U1 U2 w1 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.067 1.100 0.057 1.345 1.335 0.390 0.380 0.01 0.02 D1 0.045 0.785 0.035 0.745 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-10-13 99-12-28 SOT502A 2001 May 15 0.210 0.133 0.170 0.123 8 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-200 DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2001 May 15 9 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-200 NOTES 2001 May 15 10 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-200 NOTES 2001 May 15 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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