NEC UPD16877

DATA SHEET
MOS INTEGRATED CIRCUIT
µPD16877
MONOLITHIC QUAD H-BRIDGE DRIVER CIRCUIT
DESCRIPTION
The µPD16877 is monolithic quad H-bridge driver LSI which uses power MOSFETs in the output stages. By using
the MOS process, this driver IC has substantially improved saturation voltage and power consumption as compared
with conventional driver circuits using bipolar transistors.
By eliminating the charge pump circuit, the current during power-OFF is drastically decreased.
In addition, a low-voltage malfunction prevention circuit is also provided that prevents the IC from malfunctioning
when the supply voltage drops.
As the package, a 24-pin plastic TSSOP is adopted to enable the creation of compact, slim application sets.
This driver IC can drive two stepping motor at the same time, and is ideal for driving stepping motors in the lens of
a camcorder.
FEATURES
Four H bridge circuits employing power MOSFETs
Low current consumption by eliminating charge pump
VM pin current when power-OFF: 10 µA MAX. VDD pin current: 10 µA MAX.
Input logic frequency: 100 kHz
3-V power supply
Minimum operating supply voltage: 2.5 V
Low voltage malfunction prevention circuit
24-pin plastic TSSOP (5.72 mm (225))
ORDERING INFORMATION
Part Number
µPD16877MA-6A5
Package
24-pin plastic TSSOP (5.72 mm (225))
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. S13964EJ1V0DS00 (1st edition)
Date Published March 2000 N CP(K)
Printed in Japan
©
2000
µPD16877
ABSOLUTE MAXIMUM RATINGS (TA = 25°°C)
When mounted on a glass epoxy board (10 cm × 10 cm × 1 mm, 15% copper foil)
Parameter
Symbol
Condition
Rating
Unit
Control block supply voltage
VDD
−0.5 to +6.0
V
Output block supply voltage
VM
−0.5 to +6.0
V
Input voltage
VIN
−0.5 to VDD + 0.5
V
Output terminal voltage
VOUT
6.2
V
ID(DC)
DC
±0.3
A/ch
ID(pulse)
PW ≤ 10 ms, Duty ≤ 5%
±0.7
A/ch
Output current
Power consumption
PT
0.7
W
Peak junction temperature
TCH(MAX)
150
°C
Storage temperature range
Tstg
−55 to +150
°C
RECOMMENDED OPERATING CONDITIONS
When mounted on a glass epoxy board (10 cm × 10 cm × 1 mm, 15% copper foil)
Parameter
Symbol
Condition
MIN.
TYP.
MAX.
Unit
Control block supply voltage
VDD
2.5
5.5
V
Output block supply voltage
VM
2.7
5.5
V
Output current
ID(DC)
DC
−0.2
+0.2
A
Operating frequency
fIN
IN, EN terminal
100
kHz
Operating temperature range
TA
85
°C
Peak junction temperature
TCH(MAX)
125
°C
MAX.
Unit
−10
CHARACTERISTICS (Unless otherwise specified, VDD = VM = 3 V, TA = 25°°C)
Parameter
Symbol
MIN.
TYP.
Off state VM pin current
IM(OFF)
All control terminal: L level
10
µA
VDD pin current
IDD
All control terminal: L level
10
µA
High level input current
IIH
VIN = VDD
0.06
mA
Low level input current
IIL
VIN = 0 V
Input pull down resistance
RIND
High level input voltage
VIH
Low level input voltage
VIL
H-bridge ON resistance
RON
2.5 V ≤ VM, VDD ≤ 5.5 V
Upper + lower
VDDS1
VM = 5 V
−10°C ≤ TA ≤ +85°C
VDDS2
VM = 3 V
−10°C ≤ TA ≤ +85°C
Low voltage malfunction
prevention circuit operating voltage
H bridge output turn-on time
2
Condition
2.5 V ≤ VDD ≤ 5.5 V
50
200
kΩ
0.7 × VDD
VDD+0.3
V
−3.0
0.3 × VDD
V
3.0
Ω
0.8
2.5
V
0.65
2.5
V
0.7
20
µs
0.2
0.5
µs
0.4
1.0
µs
70
200
ns
tONH
H bridge output turn-off time
tOFFH
H bridge output rise time
tr
H bridge output fall time
tf
RM = 20 Ω
Figure 1
Data Sheet S13964EJ1V0DS00
µA
−1.0
0.1
µPD16877
Figure 1. Switching time condition
100%
50%
50%
VIN
0%
tONH
tONH
tOFFH
tOFFH
100%
90%
100%
90%
50%
50%
ID
10%
−10%
0%
10%
−10%
tf
−50%
−50%
−90%
−100%
tr
tr
−90%
The current flowing in the direction from
OUT_A to OUT_B is assumed to be (+).
tf
FUNCTION TABLE
Channel 1
Channel 2
EN1
IN1
OUT1A
OUT1B
EN2
IN2
OUT2A
H
L
H
L
H
L
H
L
H
H
L
H
H
H
L
H
L
L
Z
Z
L
L
Z
Z
L
H
Z
Z
L
H
Z
Z
EN3
IN3
OUT3A
OUT3B
EN4
IN4
OUT4A
OUT4B
H
L
H
L
H
L
H
L
H
H
L
H
H
H
L
H
L
L
Z
Z
L
L
Z
Z
L
H
Z
Z
L
H
Z
Z
Channel 3
OUT2B
Channel 4
H: High-level, L: Low-level, Z: High impedance
Data Sheet S13964EJ1V0DS00
3
µPD16877
PIN CONNECTION
4
Pin No.
Pin name
1
VM1
2
VM1
1
24
VDD
OUT1A
2
23
OUT1B
PGND
3
22
PGND
OUT2A
4
21
OUT2B
OUT3A
5
20
VM23
PGND
6
19
OUT3B
OUT4A
7
18
PGND
VM4
8
17
OUT4B
IN1
9
16
EN4
EN1
10
15
IN4
IN2
11
14
EN3
EN2
12
13
IN3
Pin function
Pin No.
Pin name
Output block supply voltage input
terminal
13
IN3
Control terminal (channel 3)
OUT1A
Output terminal
14
EN3
Enable terminal (channel 3)
3
PGND
Ground terminal
15
IN4
Control terminal (channel 4)
4
OUT2A
Output terminal
16
EN4
Enable terminal (channel 4)
5
OUT3A
Output terminal
17
OUT4B
Output terminal
6
PGND
Ground terminal
18
PGND
Ground terminal
7
OUT4A
Output terminal
19
OUT3B
Output terminal
8
VM4
Output block supply voltage input
terminal
20
VM23
9
IN1
Control terminal (channel 1)
21
OUT2B
Output terminal
10
EN1
Enable terminal (channel 1)
22
PGND
Ground terminal
11
IN2
Control terminal (channel 2)
23
OUT1B
Output terminal
12
EN2
Enable terminal (channel 2)
24
VDD
Data Sheet S13964EJ1V0DS00
Pin function
Output block supply voltage input
terminal
Control block supply voltage input
terminal
µPD16877
BLOCK DIAGRAM
24
Low volatge
malfunction
prevention
circuit
VDD
VM1
1
IN1
9
EN1
10
OUT1A
Control
H-bridge
circuit (1)
(1)
2
OUT1B
23
PGND
3
VM23
20
IN2
11
EN2
12
OUT2A
Control
H-bridge
circuit (2)
(2)
4
OUT2B
21
PGND
IN3
13
OUT3A
Control
EN3
14
22
5
H-bridge
circuit (3)
(3)
OUT3B
19
PGND
6
VM4
8
IN4
15
EN4
16
OUT4A
Control
H-bridge
circuit (4)
(4)
7
OUT4B
17
PGND
18
Remark Plural terminal (VM, PGND) is not only 1 terminal and connect all terminals.
Data Sheet S13964EJ1V0DS00
5
µPD16877
TYPICAL CHARACTERISTICS
PT vs. TA characteristics
IM (OFF) vs. VM characteristics
35
OFF state VM Pin current IM (OFF) (µ A)
Total power dissipation PT (W)
1.0
0.8
0.7W
0.6
178°C/W
0.4
0.2
0
−10 0
20
40
60
80
100
25
20
15
10
5
1
2
3
4
5
6
Ambient temperature TA (°C)
Output block supply voltage VM (V)
IDD vs. VDD characteristics
IIH, IIL vs. VDD characteristics
0.7
TA = 25°C
control : "L"
TA = 25°C
60
Input current IIH IIL (µA)
0.6
VDD pin current IDD (µ A)
30
0
120
TA = 25°C
control : "L"
0.5
0.4
0.3
0.2
50
40
IIH
30
20
0.1
10
0
0
IIL
1
2
3
4
5
6
4
5
6
VIH, VIL vs. VDD characteristics
VDDS vs. VM characteristics
3.0
VIH, VIL
2.0
1.0
1
2
3
4
5
6
Low voltage detection voltage VDDS (V)
Input voltage VIH, VIL (V)
3
Control block supply voltage VDD (V)
TA = 25°C
TA = 25°C
2.0
VDD (L
H)
1.5
VDD (H
L)
1.0
0.5
0
Control block supply voltage VDD (V)
6
2
Control block supply voltage VDD (V)
4.0
0
1
1
2
3
4
5
6
Output block supply voltage VM (V)
Data Sheet S13964EJ1V0DS00
µPD16877
RON vs. VM characteristics
tONH, tOFFH vs. VM characteristics
H-bridge ON resistance RON (Ω)
3.0
2.5
2.0
1.5
1.0
0.5
0
1
2
3
4
5
H-bridge Output turn-on time tONH (µs)
H-bridge Output turn-off time tOFFH (µ s)
1.0
TA = 25°C
TA = 25°C
0.8
tONH
0.6
0.4
tOFFH
0.2
6
Output block supply voltage VM (V)
0
1
2
3
4
5
6
Output block supply voltage VM (V)
tr, tf vs. VM characteristics
1.0
H-bridge Output rise time tr (µ s)
H-bridge Output fall time tf (µ s)
TA = 25°C
0.8
0.6
tr
0.1
0.2
tf
0
1
2
3
4
5
6
Output block supply voltage VM (V)
Data Sheet S13964EJ1V0DS00
7
µPD16877
STANDARD CONNECTION EXAMPLE
VDD = VM = 2.7 V to 5.5 V
DC/DC CONVERTER
1 to 10 µF
1 to 10 µF
VM4
VDD
low voltage
malfunction
prevention
circuit
IN1
EN1
IN2
CPU
EN2
IN3
EN3
control
circuit
VM4
OUT1A
H-bridge
OUT1B
(1)
VM2 3
PGND
H-bridge OUT2A
(2)
OUT2B
PGND
OUT3A
level
shift
circuit
IN4
EN4
H-bridge
OUT3B
(3)
PGND
OUT4A
H-bridge
OUT4B
(4)
PGND
8
motor1
Data Sheet S13964EJ1V0DS00
motor2
µPD16877
PACKAGE DIMENSION
24-PIN PLASTIC TSSOP (5.72 mm (225))
13
24
detail of lead end
F
G
R
P
L
S
12
1
E
A
H
A'
I
J
S
D
M
N
K
C
M
S
B
NOTE
Each lead centerline is located within 0.10 mm of
its true position (T.P.) at maximum material condition.
ITEM
MILLIMETERS
A
6.65±0.10
A'
6.5±0.1
B
0.575
C
0.5 (T.P.)
D
E
0.22±0.05
0.1±0.05
F
1.2 MAX.
G
1.0±0.05
H
I
J
K
L
M
4.4±0.1
1.0±0.1
0.145±0.025
0.5
0.10
6.4±0.1
N
0.08
P
3°+5°
−3°
R
0.25
S
0.6±0.15
S24MA-50-6A5
Data Sheet S13964EJ1V0DS00
9
µPD16877
RECOMMENDED SOLDERING CONDITIONS
Solder this product under the following recommended conditions.
For soldering methods and conditions other than those recommended, consult NEC.
For details of the recommended soldering conditions, refer to information document “Semiconductor Device
Mounting Technology Manual”.
Soldering Method
Soldering Conditions
Recommended
Condition Symbol
Infrared reflow
Package peak temperature: 235°C; Time: 30 secs. max. (210°C min.);
Number of times: 3 times max; Number of day: none;
Flux: Rosin-based flux with little chlorine content (chlorine: 0.2Wt% max.) is
recommended.
IR35-00-3
VPS
Package peak temperature: 215°C; Time: 40 secs. max. (200°C min.);
Number of times: 3 times max.; Number of day: none;
Flux: Rosin-based flux with little chlorine content (chlorine: 0.2 Wt% max.) is
recommended.
VP15-00-3
Wave soldering
Package peak temperature: 260°C; Time: 10 secs. max.;
Preheating temperature: 120°C max.; Number of times: once;
Flux: Rosin-based flux with little chlorine content (chlorine: 0.2 Wt% max.) is
recommended.
WS60-00-1
Caution Do not use two or more soldering methods in combination.
10
Data Sheet S13964EJ1V0DS00
µPD16877
NOTES FOR CMOS DEVICES
1
PRECAUTION AGAINST ESD FOR SEMICONDUCTORS
Note:
Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred. Environmental control
must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using
insulators that easily build static electricity. Semiconductor devices must be stored and transported
in an anti-static container, static shielding bag or conductive material. All test and measurement
tools including work bench and floor should be grounded. The operator should be grounded using
wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need
to be taken for PW boards with semiconductor devices on it.
2
HANDLING OF UNUSED INPUT PINS FOR CMOS
Note:
No connection for CMOS device inputs can be cause of malfunction. If no connection is provided
to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence
causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels
of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused
pin should be connected to V DD or GND with a resistor, if it is considered to have a possibility of
being an output pin. All handling related to the unused pins must be judged device by device and
related specifications governing the devices.
3
STATUS BEFORE INITIALIZATION OF MOS DEVICES
Note:
Power-on does not necessarily define initial status of MOS device. Production process of MOS
does not define the initial operation status of the device. Immediately after the power source is
turned ON, the devices with reset function have not yet been initialized. Hence, power-on does
not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the
reset signal is received. Reset operation must be executed immediately after power-on for devices
having reset function.
Data Sheet S13964EJ1V0DS00
11
µPD16877
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8