2SK1159, 2SK1160 Silicon N-Channel MOS FET ADE-208-1249 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline TO-220AB D 1 2 3 1. Gate 2. Drain (Flange) 3. Source G S 2SK1159, 2SK1160 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1159 Symbol Ratings Unit VDSS 450 V 2SK1160 500 Gate to source voltage VGSS Drain current ID Drain peak current I D(pulse)* Body to drain diode reverse drain current I DR 2 1 ±30 V 8 A 32 A 8 A Channel dissipation Pch* 60 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW 10 µs, duty cycle 1% 2. Value at TC = 25°C 2 2SK1159, 2SK1160 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SK1159 V(BR)DSS 450 breakdown voltage 2SK1160 500 Typ Max Unit Test conditions — — V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±30 — — V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS — — ±10 µA VGS = ±25 V, VDS = 0 Zero gate voltage 2SK1159 I DSS — — 250 µA VDS = 360 V, VGS = 0 drain current 2SK1160 Gate to source cutoff voltage VDS = 400 V, VGS = 0 VGS(off) 2.0 — 3.0 Static Drain to source 2SK1159 RDS(on) — 0.55 0.7 on state resistance — 0.60 0.8 2SK1160 V I D = 1 mA, VDS = 10 V I D = 4 A, VGS = 10 V *1 Forward transfer admittance |yfs| 4.5 7.5 — S I D = 4 A, VDS = 10 V *1 Input capacitance Ciss — 1150 — pF VDS = 10 V, VGS = 0, Output capacitance Coss — 340 — pF f = 1 MHz Reverse transfer capacitance Crss — 55 — pF Turn-on delay time t d(on) — 17 — ns I D = 4 A, VGS = 10 V, Rise time tr — 55 — ns RL = 7.5 Turn-off delay time t d(off) — 100 — ns Fall time tf — 45 — ns Body to drain diode forward voltage VDF — 0.9 — V I F = 8 A, VGS = 0 Body to drain diode forward voltage t rr — 350 — ns I F = 8 A, VGS = 0, diF/dt = 100 A/µs Note: 1. Pulse test 3 2SK1159, 2SK1160 Maximum Safe Operation Area Power vs. Temperature Derating 50 20 5 2 1.0 10 10 0 ) DS 10 (o n O is per Lim at ite ion d in by th R is A 40 re a 20 Drain Current ID (A) Channel Dissipation Pch (W) 60 µs µs P 1 DC W= m s O 10 pe m ra s ( tio 1 n sh (T ot ) C = 25 °C 0.5 ) 0.2 Ta = 25°C 0.1 2SK1160 2SK1159 0.05 50 100 Case Temperature TC (°C) 20 20 Drain Current ID (A) Pulse Test 6V 5.5 V 12 5.0 V 8 4.5 V 4 10 100 300 1,000 3 30 Drain to Source Voltage VDS (V) Typical Transfer Characteristics Typical Output Characteristics 10 V 16 1 150 Drain Current ID (A) 0 16 –25°C VDS = 20 V Pulse Test Ta = 25°C 75°C 12 8 4 VGS = 4 V 0 4 10 30 40 20 50 Drain to Source Voltage VDS (V) 0 2 6 8 4 Gate to Source Voltage VGS (V) 10 Static Drain to Source on State Resistance vs. Drain Current Static Drain to Source on State Resistance RDS (on) (Ω) Drain to Source Saturation Voltage vs. Gate to Source Voltage 10 Pulse Test 8 10 A 6 4 5A 2 ID = 2 A 8 20 4 12 16 Gate to Source Voltage VGS (V) 10 5 VGS = 10 V 1.0 15 V 0.5 0.2 0.1 0.5 VGS = 10 V Pulse Test 1.6 ID = 10 A 0.8 2, 5 A 0.4 0 –40 0 80 120 40 Case Temperature TC (°C) 1.0 2 10 5 20 Drain Current ID (A) 50 Forward Transfer Admittance vs. Drain Current 2.0 1.2 Pulse Test 2 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance yfs (S) 0 Static Drain to Source on State Resistance RDS (on) (Ω) Drain to Source Saturation Voltage VDS (on) (V) 2SK1159, 2SK1160 160 50 20 VDS = 20 V Pulse Test 10 –25°C TC = 25°C 75°C 5 2 1.0 0.5 0.1 0.2 0.5 1.0 2 Drain Current ID (A) 5 10 5 2SK1159, 2SK1160 Typical Capacitance vs. Drain to Source Voltage Body to Drain Diode Reverse Recovery Time 10,000 2,000 VGS = 0 f = 1 MHz di/dt = 100 A/µs, Ta = 25°C VGS = 0 Pulse Test Capacitance C (pF) Reverse Recovery Time trr (ns) 5,000 1,000 500 200 Ciss 1,000 Coss 100 100 Crss 50 0.2 10 0.5 1.0 2 5 10 Reverse Drain Current IDR (A) 20 0 12 200 8 VDD = 400 V 250 V 100 V ID = 8 A 4 0 6 20 60 80 40 Gate Charge Qg (nc) 100 • Switching Time t (ns) 16 VGS 300 0 VGS = 10 V, VDD = 30 V PW = 2 µs, duty < 1% • VDS 100 500 20 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) 400 VDD = 100 V 250 V 400 V 50 Switching Characteristics Dynamic Input Characteristics 500 20 10 30 40 Drain to Source Voltage VDS (V) 200 td (off) 100 tf 50 tr 20 td (on) 10 5 0.2 0.5 2 1.0 5 Drain Current ID (A) 10 20 2SK1159, 2SK1160 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 20 Pulse Test 16 12 8 5, 10 V 4 VGS = 0, –10 V Normalized Transient Thermal Impedance γS (t) 0 0.8 2.0 0.4 1.2 1.6 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C 1.0 D=1 0.5 0.3 0.2 0.1 0.1 0.05 0.03 0.02 0.01 θch–c (t) = γS (t) · θch–c θch–c = 2.08°C/W, TC = 25°C PDM h 1S 0.01 10 µ PW T D= lse u ot P T 100 µ 1m 10 m Pulse Width PW (s) 100 m PW 10 1 Switching Time Test Circuit Wavewforms Vin Monitor 90 % Vout Monitor D.U.T RL Vin Vout 10 % 10 % 10 % 50 Ω Vin = 10 V . 30 V VDD = . td (on) 90 % tr 90 % td (off) tf 7 2SK1159, 2SK1160 Package Dimensions As of January, 2001 Unit: mm 11.5 MAX 2.79 ± 0.2 10.16 ± 0.2 9.5 φ 3.6 -0.08 +0.1 1.26 ± 0.15 15.0 ± 0.3 6.4 18.5 ± 0.5 1.27 +0.2 –0.1 8.0 4.44 ± 0.2 7.8 ± 0.5 1.5 MAX 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 14.0 ± 0.5 2.7 MAX 0.5 ± 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) 8 TO-220AB Conforms Conforms 1.8 g 2SK1159, 2SK1160 Cautions 1. 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