ETC NZF220TT1/D

NZF220TT1
Advance Information
EMI Filter with ESD Protection
Features:
• EMI/RFI Bi–directional “Pi” Low–Pass Filters
• ESD Protection Meets IEC6000–4–2, up to 15 kV Air Discharge,
•
•
•
•
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or 8 kV Contact Discharge
Diode Capacitance: 7 – 10 pF
Zener/Resistor Line Capacitance: 22 ±20% pF
Low Zener Diode Leakage: 1 A Maximum
Zener Breakdown Voltage; 6 – 8 Volts
Benefits:
• Designed to suppress EMI/RFI Noise in Systems Subjected to
•
SC–75
CASE 463
PLASTIC
Electromagnetic Interference
Small Package Size Minimizes Parasitic Inductance, Thus a More
“Ideal” Low Pass Filtering Response
Typical Applications:
•
•
•
•
MARKING DIAGRAM
Cellular Phones
Communication Systems
Computers
Portable Products with Input/Output Conductors
TBD
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1.)
8 × 20 s Pulse
PPK
TBD
Watts
IEC6000–4–2 Air Discharge
ESD
CIRCUIT DESCRIPTION
±25
IEC6000402 Contact Discharge
±8.0
MIL STD 883C Method 3015–6
±16
Maximum Junction Temperature
TJ
kV
1
2
°C
150
1. All diodes under power
3
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
ORDERING INFORMATION
Device
NZF220TT1
 Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 0
1
Package
Shipping
SC–75
TBD
Publication Order Number:
NZF220TT1/D
NZF220TT1
ELECTRICAL CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Zener Breakdown Voltage, @ IZT = 1 mA
6.0
–
8.0
V
Zener Leakage Current, @ VR = 3 V
N/A
–
1.0
A
Zener Forward Voltage, @ IF = 50 mA
N/A
–
1.25
V
Capacitance
Zener Internal Capacitance, @ 0 V Bias
7.0
–
10
pF
Capacitance
Zener/Resistor Array Line Capacitance
17.6
–
26.4
pF
VZ
Ir
VF
Resistor
FC (Note 2.)
Characteristic
Resistance
90
–
110
Cutoff Frequency
–
220
–
MHz
2. 50 Source and 50 Lead Termination per Figure 2
Applications Information
Suppressing Noise at the Source
• Filter all I/O signals leaving the noisy environment
• Locate I/O driver circuits close to the connector
• Use the longest rise/fall times possible for all digital signals
Reducing Noise at the Receiver
• Filter all I/O signals entering the unit
• Locate the I/O filters as close as possible to the connector
Minimizing Noise Coupling
•
•
•
•
•
Use multilayer PCBs to minimize power and ground inductance
Keep clock circuits away from the I/O connector
Ground planes should be used whenever possible
Minimize the loop area for all high speed signals
Provide for adequate power decoupling
ESD Protection
• Locate the suppression devices as close to the I/O connector as possible
• Minimize the PCB trace length to the suppression device
• Minimize the PCB trace length for the ground return for the suppression device
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2
NZF220TT1
Frequency Response Specification
TRACKING
GENERATOR
SPECTRUM
ANALYZER
50 TG OUTPUT
RF INPUT
NZF220T
50 VG
Vin
Vout
TEST BOARD
Test Conditions:
Source Impedance = 50 Load Impedance = 50 Input Power = 0 dB
NZF220T
Figure 1. Measurement Conditions
–6.3
GAIN (dB)
–50
1.0
10
100
1000
f, FREQUENCY (MHz)
Figure 2. Typical EMI Filter Response
(50 Source and 50 Lead Termination)
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3
3000
OUTPUT
3 dB = 220 MHz
NZF220TT1
OUTLINE DIMENSIONS
EMI Filter with ESD Protection
SC–75/SOT–416
CASE 463–01
ISSUE B
–A–
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2
3
D 3 PL
0.20 (0.008)
G –B–
1
M
B
K
J
DIM
A
B
C
D
G
H
J
K
L
S
0.20 (0.008) A
C
L
MILLIMETERS
MIN
MAX
0.70
0.80
1.40
1.80
0.60
0.90
0.15
0.30
1.00 BSC
--0.10
0.10
0.25
1.45
1.75
0.10
0.20
0.50 BSC
INCHES
MIN
MAX
0.028
0.031
0.055
0.071
0.024
0.035
0.006
0.012
0.039 BSC
--0.004
0.004
0.010
0.057
0.069
0.004
0.008
0.020 BSC
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
H
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
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PUBLICATION ORDERING INFORMATION
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Phone: 81–3–5740–2700
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ON Semiconductor Website: http://onsemi.com
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*Available from Germany, France, Italy, UK, Ireland
For additional information, please contact your local
Sales Representative.
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4
NZF220TT1/D