RB751V40T1 Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. http://onsemi.com • Extremely Fast Switching Speed • Extremely Low Forward Voltage – 0.28 Volts (Typ) @ IF = 1 mAdc • Low Reverse Current 40 V SCHOTTKY BARRIER DIODE 1 CATHODE 2 ANODE MAXIMUM RATINGS Rating Symbol Value Unit VRM 40 V Reverse Voltage VR 30 Vdc Electrostatic Discharge ESD Peak Reverse Voltage 1 2 HBM Class: 1C MM Class: A SOD–323 CASE 477 PLASTIC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board, (Note 1.) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range Symbol Max Unit PD 200 mW 1.57 mW/°C RJA 635 °C/W TJ, Tstg –55 to +150 °C MARKING DIAGRAMS 5E M 1. FR–5 Minimum Pad 5E M = Specific Device Code = Date Code ORDERING INFORMATION Device RB751V40T1 Semiconductor Components Industries, LLC, 2001 May, 2001 – Rev. 1 1 Package Shipping SOD–323 3000/Tape & Reel Publication Order Number: RB751V40T1/D RB751V40T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)R 30 – – Volts Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT – 2.0 2.5 pF Reverse Leakage (VR = 30 V) IR – 300 500 nAdc Forward Voltage (IF = 1.0 mAdc) VF – 0.28 0.37 Vdc Reverse Breakdown Voltage (IR = 10 µA) 820 Ω +10 V 2k 100 µH 0.1 µF IF IF 50 Ω OUTPUT PULSE GENERATOR tp tr 0.1 µF t trr 10% DUT 50 Ω INPUT SAMPLING OSCILLOSCOPE 90% VR IR INPUT SIGNAL Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 2 t iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) RB751V40T1 1000 IR , REVERSE CURRENT (µA) 1.0 150°C 0.1 125°C 0 0.05 TA = 150°C 100 125°C 10 85°C 1.0 0.1 25°C 0.01 85°C 0.1 0.15 25°C 0.2 -40°C 0.25 0.3 0.35 -55°C 0.4 0.45 0.001 0.5 5 0 10 15 20 25 VR, REVERSE VOLTAGE (VOLTS) VF, FORWARD VOLTAGE (VOLTS) Figure 2. Typical Forward Voltage 2.5 2.0 1.5 1.0 0.5 0 0 2.0 4.0 30 Figure 3. Reverse Current versus Reverse Voltage 3.0 C T, CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 10 6.0 8.0 10 12 14 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Typical Capacitance http://onsemi.com 3 16 18 35 RB751V40T1 PACKAGE DIMENSIONS SOD–323 PLASTIC PACKAGE CASE 477–02 ISSUE B K A D 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. B DIM A B C D E H J K E C J MILLIMETERS INCHES MIN MAX MIN MAX 1.60 1.80 0.063 0.071 1.15 1.35 0.045 0.053 0.80 1.00 0.031 0.039 0.25 0.40 0.010 0.016 0.15 REF 0.006 REF 0.00 0.10 0.000 0.004 0.089 0.177 0.0035 0.0070 2.30 2.70 0.091 0.106 STYLE 1: PIN 1. CATHODE 2. ANODE H NOTE 3 0.63mm 0.025 1.60mm 0.063 2.85mm 0.112 0.83mm 0.033 mm inches SOD–323 Soldering Footprint ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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