ETC 2SC5852

2SC5852
Silicon NPN Epitaxial Planar
ADE-208-1481 (Z)
Rev.0
Feb. 2002
Features
• VHF amplifier, local oscillator
Outline
CMPAK
3
1
2
1. Emitter
2. Base
3. Collector
2SC5852
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
30
V
Collector to emitter voltage
VCEO
20
V
Emitter to base voltage
VEBO
4
V
Collector current
IC
20
mA
Collector power dissipation
PC*
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
*Value on the glass epoxy board (10 mm x 10 mm x 0.7 mm)
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
30


V
IC = 10 µA, IE = 0
Collector to emitter breakdown
voltage
V(BR)CEO
20


V
IC = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
4


V
IE = 10 µA, IC = 0
Collector cutoff current
ICEO


0.5
µA
VCE = 10 V, RBE = ∞
Emitter cutoff current
IEBO


0.5
µA
VEB = 2 V, IC =0
DC current transfer ratio
hFE*
60

200

VCE = 6 V, IC = 1 mA
Collector to emitter saturation
voltage
VCE(sat)

0.17

V
IC = 20 mA, IB = 4 mA
Base to emitter voltage
VBE

0.72

V
VCE = 6 V, IC = 1 mA
Gain bandwidth product
fT

940

MHz
VCE = 6V, IC = 5 mA
Collector output capacitance
Cob

0.9

pF
VCB = 10 V, IE = 0, f = 1 MHz
1
Notes: 1. The 2SC5852 is grouped by hFE as follows.
Grade
B
C
Mark
QB
QC
hFE
60 to 120
100 to 200
Rev.0 Feb. 2002 page 2 of 6
Collector Power Dissipation PC * (mW)
2SC5852
Maximum Collector Dissipation Curve
Typical Output Characteristics
150
20
I C (mA)
0
Collector Current
100
50
100
50
Ambient Temperature
5
12
150
8
h FE
DC Current Transfer Ratio
20
10 µA
1
IB = 0
0
4
8
12
Collector to Emitter Voltage
16
0m
W
25 µA
4
8
12
16
20
Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio vs.
Collector Current
120
30
2
15
50
4
Ta (°C)
40
3
C =
75
0
Typical Output Characteristics
4
P
100
IB = 0
50
IC (mA)
16
275
250
225
200
175
150
125
* Value on the glass epoxy board
(10 mm x 10 mm x 0.7 mm)
0
Collector Current
30
20
VCE (V)
100
VCE = 6 V
Pulse test
80
60
40
20
0
0.1
0.2
0.5
1.0
2
Collector Current
5
10
20
IC (mA)
Rev.0 Feb. 2002 page 3 of 6
2SC5852
Typical Transfer Characteristics (1)
Typical Transfer Characteristics (2)
5
VCE = 6 V
VCE = 6 V
Pulse test
16
IC (mA)
IC (mA)
20
3
Collector Current
Collector Current
12
4
8
4
0
0.6
0.7
2
1
0
0.6
0.8
Base to Emitter Voltage VBE (V)
0.8
VBE (V)
Gain Bandwidth Product vs.
Collector Current
1,000
fT (MHz)
1.5
f = 1 MHz
IE = 0
1.3
Gain Bandwidth Product
Collector Output Capacitance Cob (pF)
Collector Output Capacitance vs.
Collector to Base Voltage
0.7
Base to Emitter Voltage
1.1
0.9
0.7
0.5
0.3
1.0
3
10
Collector to Base Voltage VCB (V)
Rev.0 Feb. 2002 page 4 of 6
30
VCE = 6 V
800
600
400
200
0
0.1 0.2
0.5
1.0
Collector Current
2
5
10
IC (mA)
20
2SC5852
Package Dimensions
As of July, 2001
0.1
0.3 +– 0.05
0.2
0.65 0.65
1.3 ± 0.2
0.9 ± 0.1
0.1
0.3 +– 0.05
+ 0.1
0.16 – 0.06
0 – 0.1
0.425
1.25 ± 0.1
0.1
0.3 +– 0.05
2.1 ± 0.3
2.0 ± 0.2
0.425
Unit: mm
Hitachi Code
JEDEC
JEITA
Mass (reference value)
CMPAK
—
Conforms
0.006 g
Rev.0 Feb. 2002 page 5 of 6
2SC5852
Disclaimer
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intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.
Colophon 5.0
Rev.0 Feb. 2002 page 6 of 6