10.7Gb/s Trans-Impedance Amplifier FMM3310X FEATURES • • • • • • High Trans-Impedance Gain (Typ. 1200Ω) Complementary 50Ω Outputs Low Group Delay (<26ps@10GHz) Via Hole Ground Single -5.2V Power Supply With DC Feed Back Circuit DESCRIPTION The FMM3310X is a Trans-Impedance Amplifier for OC-192 applications. This device has a very high trans-impedance gain and complementary 50Ω output. ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Parameter Symbol Ratings Unit Supply Voltage VEE -7.0 to +0.5 V Input Current Iin 2.5 mApp Tstg -55 to +125 °C Storage Temperature ELECTRICAL CHARACTERISTICS(DC) (Tc=25°C, VEE=-5.2V, RL=50Ω) Parameter Symbol Test Conditions Min. Limit Typ. Max. 115 135 Unit Power Supply Current IEE Iin=0mA 90 Input Voltage Vin Iin=0mA -3.1 -2.7 -2.5 V mA Output Voltage Vout Iin=0mA Vout+=Vout- -0.5 -0.4 -0.3 V Output Signal Clipping Level Vsat Iin=0 to 1.3mApp 500 - 800 mVpp ELECTRICAL CHARACTERISTICS(RF) (Tc=80°C, VEE=-5.2V, RL=50Ω) Parameter Symbol Test Conditions Min. Limit Typ. Max. Unit Trans-Impedance Band Width BW -3dB from 500MHz 9.5 - 16.0 GHz Input Impedance Zin 500MHz to 10GHz 15 30 55 Ω Single-Ended Output Return Loss 500MHz to 10GHz - -12 -10 S22 1000 1200 -8 1650 Ω dB Trans-Impedance Gain Zt 10GHz to 12GHz @500MHz Input Equivalent Noise Current Density Ini 500MHz to 10GHz - - 30 pA/ Hz Group Delay GD 500MHz to 10GHz - - 26 ps Logic Sense (Note 1) DATA Input current = "High" DATAout+ = "High" DATAout- = "Low" Note 1: DATAout(+/-) must be terminated with DC-coupled 50Ω Edition 1.1 April 2002 1 10.7Gb/s Trans-Impedance Amplifier FMM3310X RECOMMENDED OPERATING CONDITIONS Parameter Supply Voltage Chip Back Side Temperature Symbol Test Conditions Min. Limit Typ. Max. Unit VEE -5.46 - -4.94 V Tc 0 - +80 °C Block Diagram 50Ω 50Ω DATAout+ DATAin DATAoutVREF DCFB FB+ 2 FB- 10.7Gb/s Trans-Impedance Amplifier FMM3310X Location of PAD Center Location of PAD Center(X,Y) PAD Size(X,Y) (01)VREF (0,5) (100,100) (02)GND (420,0) (03)DATAin Pad Name (04)GND Location of PAD Center(X,Y) PAD Size(X,Y) (10)GND (820,1000) (100,100) (100,100) (11)GND (430,1000) (100,100) (625,0) (193,100) (12)DATAout+ (225,1000) (193,100) Pad Name (830,0) (100,100) (13)GND (20,1000) (100,100) (05)NC (1250,155) (100,100) (14)DCFB (0,605) (100,100) (06)VEE (1250,580) (100,243) (15)FB- (0,455) (100,100) (07)GND (1250,810) (100,100) (16)FB+ (0,305) (100,100) (08)GND (1230,1000) (100,100) (17)GND (0,155) (100,100) (09)DATAout- (1025,1000) (193,100) NC: No Connect GND pads are connected to backside metal. Unit: µm Pin Assignment Pin Description Pin Name Pin No. VREF 1 Complementary Data Input GND 2 Ground DATAin 3 Data Input GND 4 Ground Description NC 5 No Connect VEE 6 Supply Voltage GND 7 Ground GND 8 Ground DATAout- 9 DATA Output (-) GND 10 Ground GND 11 Ground DATAout+ 12 DATA Output (+) GND 13 Ground DCFB 14 Output of DC Feed Back FB- 15 Input of DC Feed Back (-) FB+ 16 Input of DC Feed Back (+) GND 17 Ground 3 10.7Gb/s Trans-Impedance Amplifier FMM3310X CHIP OUTLINE (12) (11) (10) (09) (08) (13) (07) (14) (06) (15) (16) Y (05) (17) (01) (02) (03) (04) IC Chip Size(XxY): 1.44mm x 1.22mm (min.) 1.58mm x 1.36mm (max.) IC Chip Thickness: 0.105mm (typ.) Backside Metal: Au Pad Metal: Au X For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: www.fcsi.fujitsu.com • Do not put this product into the mouth. FUJITSU QUANTUM DEVICES EUROPE LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-23770226 FAX: +852-23763269 • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FUJITSU QUANTUM DEVICES LIMITED Business Development Division 11th Floor, Hachioji Daiichi-Seimei Bldg. 3-20-6 Myojin-cho Hachioji-city, Tokyo 192-0046, Japan TEL: +81-426-43-5885 FAX: +81-426-43-5582 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 2002 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI012002M200 4