ETC FMM3307X

10.0Gb/s Trans-Impedance
Amplifier
FMM3307X
FEATURES
•
•
•
•
•
•
High Trans-Impedance Gain (Typ. 1100Ω)
Complementary 50Ω Outputs
Low Group Delay (<18ps@10GHz)
Via Hole Ground
Single -5.2V Power Supply
DC Feed Back Circuit
DESCRIPTION
The FMM3307X is a Trans-Impedance Amplifier for OC-192 applications.
This device has a very high trans-impedance gain and complementary 50Ω output.
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Parameter
Symbol
Ratings
Unit
VEE
-7.0 to +0.5
V
Iin
2.5
mApp
Tstg
-55 to +125
°C
Supply Voltage
Input Current
Storage Temperature
ELECTRICAL CHARACTERISTICS (DC) (Tc=25°C, VEE=-5.2V, RL=50Ω)
Parameter
Power Supply Current
Symbol
IEE
Test Conditions
Iin = 0mA
Min.
90
Limit
Typ. Max.
115
135
Unit
mA
Input Voltage
Vin
-3.1
-2.7
-2.5
V
Output Voltage
Vout
Iin = 0mA, Vout+ = Vout-
-0.5
-0.4
-0.3
V
Output Signal Clipping Level
Vsat
Iin = 0 to 1.3mApp
500
-
800
mVpp
ELECTRICAL CHARACTERISTICS (RF) (Tc=80°C, VEE=-5.2V, RL=50Ω)
Parameter
Symbol
Test Conditions
Min.
Limit
Typ. Max.
Unit
Trans-Impedance Band Width
BW
-3dB
from 500MHz
7.0
-
12.0
GHz
Input Impedance
Zin
500MHz to 8GHz
15
30
60
Ω
Single-Ended Output
Return Loss
S22
500MHz to 8GHz
-
-14
-10
dB
800
1100
1800
Ω
Trans-Impedance Gain
Zt
@500MHz
Input Equivalent
Noise Current Density
Ini
500MHz to 8GHz
-
16
22
pA/ Hz
500MHz to 5.5GHz
-
10
14
ps
5.5GHz to 10GHz
DATA Input current = "High"
DATAout+ = "High"
DATAout- = "Low"
15
18
Group Delay
Logic Sense (Note 1)
GD
Note 1: The DATAout(+/-) must be terminated with DC-coupled 50Ω connection.
Edition 1.0
January 2002
1
10.0Gb/s Trans-Impedance
Amplifier
FMM3307X
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Chip Back Side Temperature
Symbol
Test Conditions
Min.
Limit
Typ. Max.
Unit
VEE
-5.46
-
-4.94
V
Tc
0
-
+80
°C
Block Diagram
50Ω
50Ω
DATAout+
DATAin
DATAoutVREF
DCFB
FB+
2
FB-
10.0Gb/s Trans-Impedance
Amplifier
FMM3307X
Location of PAD Center
Pad Name
Location of
PAD Center
(X,Y)
PAD Size
(X,Y)
Pad Name
Location of
PAD Center
(X,Y)
PAD Size
(X,Y)
(01)VREF
(0,5)
(100,100)
(10)GND
(820,1000)
(100,100)
(02)GND
(420,0)
(100,100)
(11)GND
(430,1000)
(100,100)
(03)DATAin
(625,0)
(193,100)
(12)DATAout+
(225,1000)
(193,100)
(04)GND
(830,0)
(100,100)
(13)GND
(20,1000)
(100,100)
(05)NC
(1250,155)
(100,100)
(14)DCFB
(0,605)
(100,100)
(06)VEE
(1250,580)
(100,243)
(15)FB-
(0,455)
(100,100)
(07)GND
(1250,810)
(100,100)
(16)FB+
(0,305)
(100,100)
(08)GND
(1230,1000)
(100,100)
(17)GND
(0,155)
(100,100)
(09)DATAout-
(1025,1000)
(193,100)
Unit: µm
NC: No Connect
GND pads are connected to backside metal.
Pin Assignment
Pin Description
Pin Name
Pin No.
VREF
1
Complementary Data Input
GND
2
Ground
DATAin
3
Data Input
GND
4
Ground
Description
NC
5
No Connect
VEE
6
Supply Voltage
GND
7
Ground
GND
8
Ground
DATAout-
9
DATA Output (-)
GND
10
Ground
GND
11
Ground
DATAout+
12
DATA Output (+)
GND
13
Ground
DCFB
14
Output of DC Feed Back
FB-
15
Input of DC Feed Back (-)
FB+
16
Input of DC Feed Back (+)
GND
17
Ground
3
10.0Gb/s Trans-Impedance
Amplifier
FMM3307X
CHIP OUTLINE
(12)
(11)
(10)
(09)
(08)
(13)
(07)
(14)
(06)
(15)
(16)
Y
(05)
(17)
(01)
(02)
(03)
(04)
IC Chip Size(XxY):
1.44mm x 1.22mm (min.)
1.58mm x 1.36mm (max.)
IC Chip Thickness:
0.105mm (typ.)
Backside Metal:
Au
Pad Metal:
Au
X
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
www.fcsi.fujitsu.com
• Do not put this product into the mouth.
FUJITSU QUANTUM DEVICES EUROPE LTD.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
FUJITSU QUANTUM DEVICES
SINGAPORE PTE LTD.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui,
Kowloon, Hong Kong
TEL: +852-23770226
FAX: +852-23763269
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
FUJITSU QUANTUM DEVICES LIMITED
Business Development Division
11th Floor, Hachioji Daiichi-Seimei Bldg.
3-20-6 Myojin-cho
Hachioji-city, Tokyo 192-0046, Japan
TEL: +81-426-43-5885
FAX: +81-426-43-5582
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 2002 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI012002M200
4