Bulletin I25167 rev. B 01/94 ST110S SERIES PHASE CONTROL THYRISTORS Stud Version Features 110A Center gate Hermetic metal case with ceramic insulator (Also available with glass-metal seal up to 1200V) International standard case TO-209AC (TO-94) Threaded studs UNF 1/2 - 20UNF2A Compression Bonded Encapsulation for heavy duty operations such as severe thermal cycling TypicalApplications DC motor controls Controlled DC power supplies AC controllers Major Ratings and Characteristics Parameters ST110S Units 110 A 90 °C 175 A @ 50Hz 2700 A @ 60Hz 2830 A @ 50Hz 36.4 KA2s @ 60Hz 33.2 KA2s 400 to 1600 V 100 µs - 40 to 125 °C IT(AV) @ TC IT(RMS) ITSM I2t VDRM /VRRM tq typical TJ www.irf.com case style TO-209AC (TO-94) 1 ST110S Series Bulletin I25167 rev. B 01/94 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM/V RRM, max. repetitive VRSM , maximum non- I DRM/I RRM max. Code peak and off-state voltage V repetitive peak voltage V @ TJ = TJ max 04 400 500 Type number ST110S 08 800 900 12 1200 1300 14 1400 1500 16 1600 1700 mA 20 On-state Conduction Parameter I T(AV) Max. average on-state current @ Case temperature I T(RMS) Max. RMS on-state current I TSM ST110S A 90 °C 175 A Max. peak, one-cycle 2700 non-repetitive surge current 2830 2270 I 2t Maximum I2t for fusing Units Conditions 110 A V T(TO)1 Low level value of threshold voltage r t1 Low level value of on-state High level value of on-state slope resistance reapplied t = 10ms 100% VRRM t = 8.3ms reapplied Sinusoidal half wave, t = 10ms No voltage Initial TJ = TJ max. 33.2 t = 8.3ms reapplied t = 10ms 100% VRRM t = 8.3ms reapplied 364 KA2 s KA2 √s t = 0.1 to 10ms, no voltage reapplied (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 0.90 V (I > π x IT(AV)),TJ = TJ max. 0.92 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 1.79 slope resistance r t2 t = 8.3ms 36.4 voltage V T(TO) 2 High level value of threshold No voltage 2380 23.5 Maximum I2√t for fusing DC @ 85°C case temperature t = 10ms 25.8 I 2√ t 180° conduction, half sine wave mΩ (I > π x IT(AV) ),TJ = TJ max. 1.81 V TM Max. on-state voltage 1.52 IH Maximum holding current 600 IL Typical latching current 1000 V I = 350A, TJ = TJ max, t = 10ms sine pulse mA T J = 25°C, anode supply 12V resistive load pk p Switching Parameter di/dt d Units Conditions Max. non-repetitive rate of rise of turned-on current t ST110S Typical delay time 500 A/µs Typical turn-off time 100 r TJ = TJ max, anode voltage ≤ 80% VDRM Gate current 1A, di /dt = 1A/µs g 2.0 µs tq Gate drive 20V, 20Ω, t ≤ 1µs V = 0.67% VDRM, T J = 25°C d ITM = 100A, TJ = TJ max, di/dt = 10A/µs, VR = 50V dv/dt = 20V/µs, Gate 0V 100Ω, t = 500µs p 2 www.irf.com ST110S Series Bulletin I25167 rev. B 01/94 Blocking Parameter ST110S Units Conditions dv/dt Maximum critical rate of rise of off-state voltage 500 V/µs TJ = TJ max. linear to 80% rated VDRM IRRM IDRM Max. peak reverse and off-state leakage current 20 mA TJ = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM ST110S Maximum peak gate power 5 PG(AV) Maximum average gate power IGM Max. peak positive gate current +VGM Maximum peak positive 2.0 Maximum peak negative IGD VGD A T J = TJ max, t ≤ 5ms V T J = TJ max, t ≤ 5ms p p MAX. DC gate current required 180 - to trigger 90 150 40 - DC gate voltage required 2.9 - to trigger 1.8 3.0 1.2 - DC gate current not to trigger DC gate voltage not to trigger p 5.0 TYP. VGT T J = TJ max, t ≤ 5ms T J = TJ max, f = 50Hz, d% = 50 20 gate voltage IGT W 1 gate voltage -V GM Units Conditions 10 0.25 T J = - 40°C mA T J = 25°C T J = 125°C T J = - 40°C V Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied T J = 25°C T J = 125°C mA V TJ = TJ max Max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Thermal and Mechanical Specification Parameter ST110S TJ Max. operating temperature range -40 to 125 Tstg Max. storage temperature range -40 to 150 RthJC Max. thermal resistance, junction to case RthCS Max. thermal resistance, case to heatsink T Mounting torque, ± 10% Units Conditions °C 0.195 DC operation K/W 0.08 Mounting surface, smooth, flat and greased 15.5 Non lubricated threads (137) 14 Nm (lbf-in) Lubricated threads (120) wt Approximate weight Case style www.irf.com 130 g TO - 209AC (TO-94) See Outline Table 3 ST110S Series Bulletin I25167 rev. B 01/94 ∆RthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units 180° 0.035 0.025 120° 0.041 0.042 90° 0.052 0.056 60° 0.076 0.079 30° 0.126 0.127 Conditions TJ = TJ max. K/W Ordering Information Table Device Code ST 11 0 S 16 P 0 V 1 2 3 4 5 6 7 8 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - S = Compression bonding Stud 5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - P = Stud base 20UNF threads 7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Leads) 9 1 = Fast - on terminals (Gate and Auxiliary Cathode Leads) 2 = Flag terminals (For Cathode and Gate Terminals) 8 - 9 - V = Glass-metal seal (only up to 1200V) None = Ceramic housing (over 1200V) Critical dv/dt: None = 500V/µsec (Standard value) L 4 = 1000V/µsec (Special selection) www.irf.com ST110S Series Bulletin I25167 rev. B 01/94 Outline Table GLASS METAL SEAL )M IN . 9.5 4.3 (0.17) DIA (0.3 7) M 2.6 (0.10) MAX. IN . 16.5 (0.65) MAX. 8.5 (0.33) DIA. 20 (0. 79 FLEXIBLE LEAD C.S. 16mm 2 (.025 s.i.) C.S. 0.4 mm 2 Fast-on Terminals (.0006 s.i.) 170 (6.69) RED CATHODE AMP. 280000-1 REF-250 WHITE GATE 215 (8.46) 10 (0.39) WHITE SHRINK MAX. 23.5 (0.93) MAX. DIA. 21 ( 0.83) 12.5 (0.49) MAX. RED SHRINK 29 (1.14) MAX. 70 (2.75) MIN. 157 (6.18) RED SILICON RUBBER SW 27 1/2"-20UNF-2A Case Style TO-209AC (TO-94) 29.5 (1.16) MAX. All dimensions in millimeters (inches) CERAMIC HOUSING IN . (0. 79 9. 5 C.S. 16mm 2 C.S. 0.4 mm 2 RED SILICON RUBBER 20 FLEXIBLE LEAD )M 2.6 (0.10) MAX. 4.3 (0.17) DIA (0 . 37 )M IN . 16.5 (0.65) MAX. 8.5 (0.33) DIA. (.025 s.i.) 170 (6.69) 157 (6.18) (.0006 s.i.) RED CATHODE WHITE GATE 10 (0.39) WHITE SHRINK MAX. 21 (0.83) 22.5 (0.88) MAX. DIA. 12. 5 (0.49) MAX. 29 (1.14) MAX. 70 (2.75) MIN. 215 (8.46) RED SHRINK SW 27 1/2"-20UNF-2A 29.5 (1.16) MAX. www.irf.com 5 ST110S Series Bulletin I25167 rev. B 01/94 Outline Table GLASS-METAL SEAL FLAG TERMINALS 23.5 DIA. 5.2 (0.20) DIA. (0.93) MAX. 10 (0.39) 29 (1.14) MAX. 7.5 (0.30) MAX. MAX. 21(0.83) 12.5 (0.49) 49 (1.93) 46 (1.81) 10 ( 0 39) 1.5 (0.06) DIA. (0.65) 16.5 SW 27 1/2"-20UNF-2A Case Style TO-208AD (TO-83) 2.4 (0.09) 29.5 (1.16) All dimensions in millimeters (inches) CERAMIC HOUSING FLAG TERMINALS 22.5 DIA. 5.2 (0.20) DIA. (0.89) MAX. 10 (0.39) 29 (1.14) MAX. 10 (0.39) 7.5 (0.30) MAX. MAX. 21(0.83) 12.5 (0.49) 49 (1.93) 46 (1.81) 1.5 (0.06) DIA. 16.5 (0.65) SW 27 1/2"-20UNF-2A 2.4 (0.09) 29.5 (1.16) 6 www.irf.com ST110S Series Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) Bulletin I25167 rev. B 01/94 130 ST110S Series R thJC (DC) = 0.195 K/W 120 110 Conduction Angle 100 30° 90 60° 90° 120° 180° 80 0 20 40 60 80 100 120 130 ST110S Series R thJC (DC) = 1.95 K/W 120 110 Conduction Period 30° 100 60° 90 90° 120° 180° 80 0 20 Average On-state Current (A) 60 80 100 120 140 160 180 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 160 S R th A =0 K/ W W K/ .1 K/ W 0. 6K /W 0 .8 K/W 1K /W 1 .2 R 60 a elt -D RMS Limit 80 W K/ 100 2 0. 120 0. 4 0. 5 W K/ 180° 120° 90° 60° 30° 140 3 0. Maximum Average On-state Power Loss (W) 40 DC K /W Conduction Angle 40 ST110S Series T J = 125°C 20 0 0 20 40 60 80 100 120 25 Average On-state Current (A) 50 75 100 125 Maximum Allowable Ambient Temperature (°C) 220 80 Conduction Period 60 K/W K/ W 1K /W 1 .2 40 R 0 .8 K/ W K/ W ta 0.6 100 RMS Limit el -D 0. 5 120 K/ W W K/ 0. 4 0.1 140 0. 3 = 160 W K/ 180 A hS R t DC 180° 120° 90° 60° 30° 200 2 0. Maximum Average On-state Power Loss (W) Fig. 3 - On-state Power Loss Characteristics K/W ST110S Series TJ = 125°C 20 0 0 20 40 60 80 100 120 140 160 180 25 Average On-state Current (A) 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 4 - On-state Power Loss Characteristics www.irf.com 7 ST110S Series 2400 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) Bulletin I25167 rev. B 01/94 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 2200 2000 1800 1600 1400 1200 ST110S Series 1000 1 10 100 2800 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. 2400 Initial TJ = 125°C No Voltage Reapplied 2200 Rated V RRMReapplied 2600 2000 1800 1600 1400 1200 ST110S Series 1000 0.01 0.1 1 10 Number Of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 10000 TJ = 25°C 1000 TJ = 125°C 100 ST110S Series 10 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Instantaneous On-state Voltage (V) Transient Thermal Impedance Z thJC (K/W) Fig. 7 - On-state Voltage Drop Characteristics 1 Steady State Value R thJC = 0.195 K/W (DC Operation) 0.1 0.01 ST110S Series 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristic 8 www.irf.com ST110S Series Bulletin I25167 rev. B 01/94 Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 µs b) Recommended load line for <=30% rated di/dt : 10V, 10ohms 10 tr<=1 µs (b) VGD IGD 0. 1 0. 001 0.01 (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, (a) (1) (2) (3) (4) Frequency Limited by PG(AV) Device: ST110S Series 0.1 tp = 4ms tp = 2ms tp = 1ms tp = 0.66ms Tj=-40 °C 1 Tj=25 °C Tj=125 °C Instantaneous Gate Voltage (V) 100 1 10 100 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics www.irf.com 9