ETC 2SB765(K)

2SB765(K)
Silicon PNP Triple Diffused
Application
Medium speed and power switching complementary pair with 2SD864(K)
Outpline
TO-220AB
2
1
1
2 3
1. Base
2. Collector
(Flange)
3. Emitter
4 kΩ
(Typ)
300 Ω
(Typ)
3
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Rating
Unit
Collector to base voltage
VCBO
–120
V
Collector to emitter voltage
VCEO
–120
V
Emitter to base voltage
VEBO
–7
V
Collector current
IC
–3
A
Collector peak current
IC(peak)
–6
A
30
W
1
Collector power dissipation
PC*
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at TC = 25°C
2SB765(K)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown V(BR)CEO
voltage
–120
—
—
V
IC = –25 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
–7
—
—
V
IE = –50 mA, IC = 0
Collector cutoff current
ICBO
—
—
–100
µA
VCB = –120 V, IE = 0
ICEO
—
—
–10
µA
VCE = –100 V, RBE = ∞
DC current transfer ratio
hFE
1000
—
20000
Collector to emitter saturation
voltage
VCE(sat)1
—
—
–1.5
V
IC = –1.5 A, IB = –3 mA*
VCE(sat)2
—
—
–3.0
V
IC = –3 A, IB = –30 mA*
VBE(sat)1
—
—
–2.0
V
IC = –1.5 A, IB = –3 mA*
VBE(sat)2
—
—
–3.5
V
IC = –3 A, IB = –30 mA*
Turn on time
ton
—
0.8
—
µs
IC = –1.5 A, IB1 = –IB2 = –3 mA
Storage time
tstg
—
3.0
—
µs
Fall time
tf
—
1.5
—
µs
Base to emitter saturation
voltage
Note:
1
VCE = –3 V, IC = –1.5 A*
Maximum Collector Dissipation Curve
1
1
Area of Safe Operation
30
15
–3
IC (max)
(Continuous)
–1.0
–0.3
–0.1
–0.03
0
50
100
Case Temperature TC (°C)
150
1 µs
–0.01
–1
100 µs
s
1 m 0 ms
1
tion
=
era
Op C)
DC = 25°
(T C
Collector Current IC (A)
–10 i
C (peak)
PW
Collector power dissipation Pc (W)
1
1. Pulse test
45
2
1
Ta = 25°C
1 Shot pulse
–3
–10 –30 –100 –300 –1,000
Collector to emitter Voltage VCE (V)
2SB765(K)
DC Current Transfer Ratio vs.
Collector Current
Typical Output Characteristics
30,000
TC = 25°C
DC current transfer ratio hFE
–8
–2.0
5W
=2
Collector Current IC (A)
Pc
–10
–1.8
–1.6 –1.4
–1.2
–1.0
–0.8
–6
–0.6
–4
–0.4
–2
–0.2 mA
IB = 0
–0
0
VCE = –3 V
10,000
3,000
1,000
300
–0.1
–2
–4
–6
–8
–10
Collector to emitter Voltage VCE (V)
tstg
3
VBE (sat)
–1.0
VCE (sat)
TC = 25°C
lC/lB = 200
500
1.0
–0.5 –1.0 –2
–5
Collector current IC (A)
–10
tf
ton
0.3
0.1
0.03
–0.2
–0.1
–0.1 –0.2
–10
Switching Time vs. Collector Current
–5
–0.5
–0.3
–1.0
–3
Collector current IC (A)
10
Switching time t (µs)
Collector to emitter saturation voltage
VCE (sat) (V)
Base to emitter saturation voltage
VBE (sat) (V)
Saturation Voltage vs. Collector Current
–10
–2
°C
75
T C °C
25 °C
5
–2
=
0.01
–0.1
VCC = –30 V
IC = 500 IB1 = –500 IB2
Ta = 25°C
–0.3
–1.0
–3
Collector current IC (A)
–10
3
2SB765(K)
Transient Thermal Resistance
10
Thermal resistance θj-c (°C/W)
1-1,000 s
3
0 ms
1-1,00
1.0
0.3
0.1
0.03
Ta = 25°C
0.01
1
10
1
10
Time t
4
100
1,000 (s)
100
1,000 (ms)
2SB765(K)
Notice
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or
part of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or
any other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the examples
described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third
party or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
5
2SB765(K)
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Tel: Tokyo (03) 3270-2111
Fax: (03) 3270-5109
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USA
Tel: 415-589-8300
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6
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