2SD2115(L)/(S) Silicon NPN Epitaxial Planar Application Low frequency power amplifier Outline DPAK 4 4 1 2 1. Base 2. Collector 3. Emitter 4. Collector 3 S Type 12 3 L Type Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage VCBO 150 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 5 V Collector current IC 2 A Collector peak current IC(peak) 2.5 A 1 Collector power dissipation PC* 18 W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at TC = 25°C. 2SD2115(L)/(S) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 150 — — V IC = 1 mA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage 60 — — V IC = 10 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 5 — — V IE = 1 mA, IC = 0 Collector cutoff current ICBO — — 10 µA VCB = 100 V, IE = 0 DC current transfer ratio hFE 150 — — Collector to emitter saturation voltage VCE(sat) — — 0.8 V IC = 1.5 A, IB = 0.05 A* 1 Base to emitter saturation voltage VBE(sat) — — 1.3 V IC = 1.5 A, IB = 0.05 A* 1 Fall time tf — — 0.6 µs IC = 1.5 A, IB1 = –IB2 = 50 mA Note: VCE = 5 V, IC = 1.5 A* 1. Pulse test. Maximum Collector Dissipation Curve Collector power dissipation PC (W) 30 20 10 0 50 100 Case temperature TC (°C) 150 Area of Safe Operation 3.0 iC(peak) 0.3 0.1 Ta = 25°C, 1 shot pulse s ) 1m s 5°C =2 0m (T C =1 tion PW era Op DC Collector current IC (A) IC(max) 1.0 0.03 1 2 3 10 30 100 Collector to emitter voltage VCE (V) 1 2SD2115(L)/(S) Typical Output Characteristics Collector current IC (A) 1.0 5 4.5 4 3.5 0.8 3 2.5 0.6 2 1.5 0.4 1 0.2 0.5 mA IB = 0 0 TC = 25°C 4 6 8 10 2 Collector to emitter voltage VCE (V) DC Current Transfer Ratio vs. Collector Current DC current transfer ratio hFE 1,000 300 100 30 10 0.03 VCE = 5 V Ta = 25°C 0.1 1.0 0.3 Collector current IC (A) 3.0 3 Collector to Emitter Saturation Voltage vs. Base Current 10 3.0 4 IC = 2 A 1A 1.0 1.5 A 0.3 Ta = 25°C 0.1 Collector to emitter saturation voltage VCE(sat) (V) Base to emitter saturation voltage VBE(sat) (V) Collector to emitter saturation voltage VCE(sat) (V) 2SD2115(L)/(S) 2 10 30 100 Base current IB (mA) 200 Saturation Voltage vs. Collector Current 10 3 1.0 VBE(sat) 0.3 0.1 0.03 0.01 0.03 VCE(sat) IC = 20 IB Ta = 25°C 0.3 0.1 1.0 Collector current IC (A) 3.0 2SD2115(L)/(S) When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 5