ETC 2SD2491D

2SD2491, 2SD2492
Silicon NPN Epitaxial
Application
Low frequency high voltage amplifier
Features
• Isolated package
TO-126FM
Outline
TO-126FM
1
2
1. Emitter
2. Collector
3. Base
3
2SD2491, 2SD2492
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item
Symbol
2SD2491
2SD2492
Unit
Collector to base voltage
VCBO
160
200
V
Collector to emitter voltage
VCEO
160
200
V
Emitter to base voltage
VEBO
5
5
V
Collector current
IC
100
100
mA
Collector power dissipation
PC
1.35
1.35
W
8
8
W
1
Collector power dissipation
PC*
Junction temperature
Tj
150
150
°C
Storage temperature
Tstg
–55 to +150
–55 to +150
°C
Note:
1. Value at TC = 25°C
Electrical Characteristics (Ta = 25°C)
2SD2491
2SD2492
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V(BR)CBO
160
—
—
200
—
—
V
IC = 10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
160
—
—
200
—
—
V
IC = 1 mA, RBE = ∞
Emitter to base
breakdown voltage
V(BR)EBO
5
—
—
5
—
—
V
IE = 10 µA, IC = 0
—
—
10
—
—
—
µA
VCB = 140 V, IE = 0
—
—
—
—
—
10
µA
VCB = 160 V, IE = 0
60
—
320
60
—
320
VCE = 5 V, IC = 10 mA
VCE = 5 V, IC = 1 mA
Collector cutoff current ICBO
1
DC current transfer
ratio
hFE1*
DC current transfer
ratio
hFE2
30
—
—
30
—
—
Base to emitter voltage VBE
—
—
1.5
—
—
1.5
V
VCE = 5 V, IC = 10 mA
Collector to emitter
saturation voltage
—
—
2
—
—
2
V
IC = 30 mA, IB = 3 mA
Gain bandwidth product fT
—
140
—
—
140
—
MHz
VCE = 5 V, IC = 10 mA
Collector output
capacitance
—
3.8
—
—
3.8
—
pF
VCB = 10 V, IE = 0
f = 1 MHz
Note:
2
VCE(sat)
Cob
1. The 2SD2491 and 2SD2492 are grouped by hFE1 and its specification is as follows.
2SD2491, 2SD2492
B
C
D
60 to 120
100 to 200
160 to 320
See characteristic curves of 2SD1609, 2SD1610.
Maximum Collector Dissipation Curve
Collector Power Dissipation Pc (W)
8
6
Tc
4
2
1.35W
0
Ta
50
100
150
200
Case Temperature Tc (°C)
Ambient Temperature Ta (°C)
3
2SD2491, 2SD2492
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1. This document may, wholly or partially, be subject to change without notice.
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of this document without Hitachi’s permission.
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other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
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or Hitachi, Ltd.
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APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
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4
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