INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 8 May 2002. MIL-PRF-19500/343F 8 February 2002 SUPERSEDING MIL-PRF-19500/343E 28 November 2000 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW POWER, TYPES 2N2857 AND 2N2857UB JAN, JANTX, JANTXV, AND JANS, JANHC AND JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, low power, ultra-high frequency transistors. Four levels of product assurance are provided for each device type and two levels for unencapsulated chips as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figures 1 (TO-72) and 2 (surface mount) and figure 3 (JANHC, JANKC). 1.3 Maximum ratings. PT (1) TA = +25°C PT (2) TC = +25°C IC VCBO VCEO VEBO TJ and TSTG mW MW mA dc V dc V dc V dc °C 200 300 40 30 15 3 -65 to +200 (1) Derate linearly 1.14 mW/°C for TA > +25°C. (2) Derate linearly 1.71 mW/°C for TC > +25°C. 1.4 Primary electrical characteristics at TA = +25°C. Min Max hFE1 VCE = 1 V dc IC = 3 mA dc | hfe | VCE = 6 V dc IC = 5 mA dc f = 100 MHz 30 150 10 21 Ccb VCB = 10 V dc IE = 0 f = 100 kHz < f< 1 MHz pf F VCE = 6 V dc IC = 1.5 mA dc f = 450 MHz Rg = 50 Ω db 1.0 4.5 Gpe VCE = 6 V dc IC = 1.5 mA dc f = 450 MHz rb' Cc VCB = 6 V dc IE = 2 mA dc f = 31.9 MHz db 12.5 21 ps 4 15 Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. FSC 5961 MIL-PRF-19500/343F Symbol CD CH HD LC LD LL LU L1 L2 P Q TL TW r α Dimensions Inches Millimeters Min Max Min Max .178 .195 4.52 4.95 .170 .210 4.32 5.33 .209 .230 5.31 5.84 .100 TP 2.54 TP .016 .021 .406 .533 .500 .750 12.70 19.05 .016 .019 .41 .48 .050 1 .27 .250 6.35 .100 2.54 .040 1.02 .028 .048 .71 1.22 .036 .046 .91 1.17 .007 .18 45° TP Notes TO-72 5 5 7,8 7,8 7,8 5 NOTES: 1. Dimension are in inches. 2. Metric equivalents are given for general information only. 3. Beyond r (radius) maximum, TH shall be held for a minimum length of .011 (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone defined by HD, CD, and Q. 6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods or by the gauge and gauging procedure shown in figure 2. 7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 8. All four leads. 9. Dimension r (radius) applies to both inside corners of tab. 10. In accordance with ANSI Y14.5M, diameters are equivalent to Φx symbology. 11. Lead 1 = emitter, lead 2 = base, lead 3 = collector, lead 4 = case (electrically connected). FIGURE 1. Physical dimensions for 2N2857, (TO-72). 2 MIL-PRF-19500/343F UB Symbol A A1 B1 B2 B3 D D1 D2 D3 E E3 L1 L2 Inches Min .046 .017 .016 .016 .016 .085 .071 .035 .085 .115 .022 .022 Dimensions Millimeters Max Min Max .056 0.97 1.42 .035 0.43 0.89 .024 0.41 0.61 .024 0.41 0.61 .024 0.41 0.61 .108 2.41 2.74 .079 1.81 2.01 .039 0.89 0.99 .108 2.41 2.74 .128 2.82 3.25 .128 3.25 .038 0.56 0.96 .038 0.56 0.96 Note NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. FIGURE 2. Physical dimensions, surface mount (UB version). 3 MIL-PRF-19500/343F B E SCA0011 Die size ----------.016 x .016 inch (0.406 x 0.406 millimeter). Die thickness---.008 ± .0016 inch (0.203 x 0.406 millimeter). Base pad--------.0023 x .0023 inch (0.058 x 0.058 millimeter). Emitter pad-----.0023 x .0023 inch (0.058 x 0.058 millimeter). Back metal:-----Gold, 6500 ± 1950 Ang Top metal-------Aluminum, 17500 ± 2500 Ang Back side-------Collector Glassivation----SiO2, 7500 ± 1500 Ang FIGURE 3. JANHC and JANKC (A-version) die dimensions. 4 MIL-PRF-19500/343F 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-19500 - Semiconductor Devices, General Specification for. STANDARD DEPARTMENT OF DEFENSE MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The requirements for acquiring the product described herein shall consist of this document and MIL-PRF-19500. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML) before contract award (see 4.2 and 6.4). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figures 1, 2 and 3. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3. 3.6 Electrical test requirements. The electrical test requirements shall be the subgroups of table I herein. 5 MIL-PRF-19500/343F 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, marking on the UB package may be omitted from the body, but shall be retained on the initial container. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. * 4.2.1. JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with MIL-PRF-19500. 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table IV of MIL-PRF-19500) 3c 7 9 10 11 12 13 Measurement JANS level Thermal impedance Method 3131 of MIL-STD-750. (1) “ICES, hFE1”. 48 hours minimum ICES, hFE1; ∆ICES = 100 percent of initial value or 5 nA, whichever is greater; ∆hFE1 = 15 percent See 4.3.1 Subgroups 2 and 3 of table I herein; ∆ICES = 100 percent of initial value or 5 nA dc, whichever is greater; ∆hFE1 = 15 percent JANTX and JANTXV levels Thermal impedance Method 3131 of MIL-STD-750. (1) Not applicable 48 hours minimum ICES, hFE1 See 4.3.1 Subgroup 2 of table I herein; ∆ICES = 100 percent of initial value or 5 nA dc, whichever is greater; ∆hFE1 = 15 percent (1) Hermetic seal test shall be performed in either screen 7 or screen 14. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 V dc, PT = 200 mW at, TA = room ambient as defined in the general requirements of 4.5 of MIL-STD-750. NOTE: No heat sink or forced air cooling on the devices shall be permitted. 4.3.2 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with MIL-PRF-19500, “Discrete Semiconductor Die/Chip Lot Acceptance”. Burn-in duration for the JANKC level follows JANS requirements; the JANHC follows JANTX requirements. 6 MIL-PRF-19500/343F 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein. If alternate screening is being performed in accordance with E.5.3.1d of MIL-PRF-19500, a sample of screened devices shall be submitted to and pass the requirements of group A1 and A2 inspection only (table VIb, group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with 4.4.2). 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table VIa (JANS) of MIL-PRF-19500 and 4.4.2.1 herein. See 4.4.2.2 herein for JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-points) and delta requirements shall be in accordance with the steps of table II herein and as specified in the notes for table II. 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500. Method Conditions B4 1037 VCB = 10 V dc B5 1027 VCB = 10 V dc; 1,000 hours maximum rated power shall be applied and ambient temperature adjusted to achieve TJ = +150°C minimum. N = 45, c=0. Subgroup * 4.4.2.2 Group B inspection (JAN, JANTX and JANTXV). Separate samples may be used for each step. In the event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed assembly lot shall be scrapped. Step Method Conditions 1 1027 Steady-state life: Test condition B, 340 hours, VCB = 10 V dc; maximum rated power shall be applied and ambient temperature adjusted to achieve TJ = +150°C minimum; n = 45 devices, c = 0. For small lots, n = 12 devices, c = 0 2 1027 The steady-state life test of step 1 shall be extended to 1,000 hours for each die design. Samples shall be selected from a wafer lot every twelve months of wafer production. Group B, step 2 shall not be required more than once for any single wafer lot. n = 45, c = 0. 3 1032 High temperature life (non-operating), t = 340 hours, TA = +200°C. n = 22, c = 0. 4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following requirements: a. For JAN, JANTX and JANTXV samples shall be selected randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection lot. See MIL-PRF-19500. b. Must be chosen from an inspection lot that has been submitted to and passed group A conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX, and JANTXV) may be pulled prior to the application of final lead finish. 7 MIL-PRF-19500/343F 4.4.3 Group C inspection, JANS. Group C inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table VII of MIL-PRF-19500, and in 4.4.3.1 herein (JANS). See 4.4.3.2 herein for JAN, JANTX, and JANTXV group C testing. Electrical measurements (end points) and delta requirements shall be in accordance with the steps of table II herein as specified in the notes for table II. 4.4.3.1 Group C inspection, table VII (JANS) of MIL-PRF-19500. Method Condition C2 2036 Test condition E; not applicable for UB devices. C6 1026 VCB = 10 V dc, 1,000 hours; maximum rated power shall be applied and ambient temperature adjusted to achieve TJ = +150°C minimum. N = 45 devices, c = 0. For small lots, n = 12 devices, c = 0. Subgroup 4.4.3.2 Group C inspection, JAN, JANTX, and JANTXV, table VII of MIL-PRF-19500. Subgroup C2 C6 Method Condition 2036 Test condition E; not applicable for UB devices. Not applicable. 4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any inspection lot containing the intended package type and lead finish procured to the same specification which is submitted to and passes group A tests for conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for C6 life test may be pulled prior to the application of final lead finish. Testing of a subgroup using a single device type enclosed in the intended package type shall be considered as complying with the requirements for that subgroup. * 4.4.4 Group E inspection. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the associated specification that did not request the performance of table III herein must be performed to maintain qualification. 4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Noise figure. The noise figure shall be measured using commercially available test equipment and its associated standard test procedures (see figure 4). 8 MIL-PRF-19500/343F TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Method Limits Symbol Conditions Min Unit Max Subgroup 1 2/ Visual and mechanical examination 3/ 2071 n = 45 devices, c = 0 Solderability 3/ 4/ 2026 n = 15 leads, c = 0 Resistance to solvents 3/ 4/ 5/ 1022 n = 15 devices, c = 0 Temp cycling 3/ 4/ 1051 Test condition C, 25 cycles. n = 22 devices, c = 0 Heremetic seal 4/ Fine leak Gross leak 1071 n = 22 devices, c = 0 Electrical measurements 4/ Bond strength 3/ 4/ Group A, subgroup 2 2037 Precondition TA = +250°C at t = 24 hrs or TA = +300°C at t = 2 hrs n = 11 wires, c = 0 Breakdown voltage, collector to emitter 3011 Bias condition D; IC = 3 mA dc V(BR)CEO 15 V dc Collector to base cutoff current 3036 Bias condition D; VCB = 15 V dc ICBO1 10 nA dc Collector to base cutoff current 3036 Bias condition D; VCB = 30 V dc ICBO3 1 µA dc 3061 Bias condition D VEB = 3 V dc IEBO1 10 µA dc Forward-current transfer ratio 3076 VCE = 1 V dc; IC = 3 mA dc hFE1 Collector-emitter saturation voltage 3071 IC = 10 mA dc; IB = 1 mA dc; VCE(sat) 0.4 V dc Base-emitter saturation voltage 3066 Test condition A; IC = 10 mA dc; IB = 1 mAdc; VBE(sat) 1.0 V dc Subgroup 2 Emitter to base cutoff current See footnotes at end of table. 9 30 150 MIL-PRF-19500/343F TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Limits Symbol Conditions Min Unit Max Subgroup 2 (continued) Collector to emitter cutoff current 3041 Bias condition C; VCE = 16 V dc ICES 100 nA dc ICBO2 1.0 µA dc 4.5 dB Subgroup 3 TA = +150°C High temperature operation Collector to base cutoff current 3036 Low temperature operation Forward-current transfer ratio Bias condition D; VCB = 15 V dc TA = -55°C 3076 VCE = 1 V dc; IC = 3 mA dc hFE2 10 Subgroup 4 Noise figure VCE = 6 V dc; IC = 1.5 mA dc; f = 450 MHz Rg = 50 Ω (case lead grounded) (see 4.5.2 and figure 4) F Magnitude of common-emitter small-signal short-circuit forward-current transfer ratio 3306 VCE = 6 V dc; IC = 5 mA dc; f = 100 MHz (case lead grounded) hfe 10 21 Small-signal short-circuit forward current transfer ratio 3206 VCE = 6 V dc; IC = 2 mA dc; (case lead floating) hfe 50 220 See footnotes at end of table. 10 MIL-PRF-19500/343F TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Limits Symbol Conditions Min Unit Max Subgroup 4 (continued) Collector to base -feedback capacitance Small-signal power gain Collector - base time constant 3256 VCB = 10 V dc; IE = 0 mA dc; 100 kHz < f < 1 MHz (see 4.5.1) Ccb VCE = 6 V dc; IE = 1.5 mA dc; f = 450 MHz Gpe rb' Cc VCB = 6 V dc; IE = 2 mA dc; f = 31.9 MHz (see figure 5) 1.0 pF 12.5 21 dB 4 15 pF 1/ For sampling plan (unless otherwise specified), see MIL-PRF-19500. 2/ For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests. A failure in group A, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon submission. 3/ Separate samples may be used. 4/ Not required for JANS devices. 5/ Not required for laser marked devices. 11 MIL-PRF-19500/343F TABLE II. Groups A, B, and C electrical end-point inspection measurements. 1/ 2/ 3/ 4/ MIL-STD-750 Step Inspection Limit Method 1. Symbol Max Unit ICBO1 10 nA dc ICBO2 20 nA dc VCE(sat) 0.4 V dc Test condition A IC = 10 mA dc; IB = 1 mA dc VCE = 1 V dc; IC = 3 mA dc VBE(sat) 1.0 V dc Conditions Collector-base cutoff current Collector - base cutoff current Collector to emitter voltage (saturated) 3036 4. Base-emitter voltage (saturated) 3066 5. Forward current transfer ratio 3076 6. Collector-base cutoff current 3036 Bias condition D; VCB = 15 V dc ∆ICB01 7. Forward current transfer ratio 3076 VCE = 1.0 V dc; IC = 3 mA dc; ∆hFE1 8. Collector to emitter voltage (saturated) 3071 IC = 10 mA dc; IB = 1.0 mA dc ∆VCE(sat) 2. 3. 3036 3071 Bias condition D; VCB = 15 V dc Bias condition D; VCB = 15 V dc IC = 10 mA dc; IB = 1.0 mA dc pulsed hFE1 Min 30 150 100 percent of initial value or 5 nA dc, whichever is greater. + 25 percent change from initial value. + 50 mV dc change from initial value. 1/ The electrical measurements for table VIa (JANS) of MIL-PRF-19500 are as follows: a. Subgroup 3, see table II herein, steps 1, 3, 4, 5, and 6. b. Subgroups 4 and 5, see table II herein, steps 2, 3, 4, 5, and 8. 2/ The electrical measurements for group B, 4.4.2.2 herein (JAN, JANTX, and JANTXV) are as follows: Steps 1, 2, and 3 of 4.4.2.2, see table II herein, steps 2, 6, 7, and 8. 3/ The electrical measurements for table VII (JANS) of MIL-PRF-19500 are as follows: a. Subgroup 2 and 3, see table II herein, steps 1, 3, 4, 5, and 6 (for JANS). b. Subgroup 6, see table II herein, steps 2, 3, 4, 5, 6, 7, and 8 (for JANS). 4/ The electrical measurements for group C, 4.4.3.2 herein (JAN, JANTX, and JANTXV) are steps 1, 3, 4 and 5. 12 MIL-PRF-19500/343F * TABLE III. Group E inspection (all quality levels) - for qualification only. Inspection MIL-STD-750 Method Qualification Conditions 45 devices c=0 Subgroup 1 Temperature cycling (air to air) 1051 Hermetric seal 1071 Test condition C, 500 cycles. Fine leak Gross leak Electrical measurements See group A, subgroup 2. Subgroup 2 45 devices c=0 Intermittent life 1037 Electrical measurements Intermittent operation life: VCB = 10 V dc; 6,000 cycles. See group A, subgroup 2. Subgroup 3, 4, 5, 6, and 7 Not applicable Subgroup 8 Reverse stability 45 devices c=0 1033 Condition A ≥ 400 V Condition B < 400 V 13 MIL-PRF-19500/343F UHF NOISE SOURCE HEWLETT-PACKARD TYPE 349A OR EQUIVALENT 50 OHM 10 DB PAD NOISE FIGURE METER HEWLETTPACKARD TYPE 342A OR EQUIVALENT 450 MHZ RF AMPLIFIER 450 MHZ RF AMPLIFIER AND 450/390 MHZ MIXER 60 MHZ IF AMPLIFIER 390 MHZ OSCILLATOR HEWLETT-PACKARD TYPE 608C OR EQUIVALENT FIGURE 4. Block diagram for noise figure test. Procedure: 1. With a short circuit applied between the collector and emitter terminals adjust 31.9 MHz input for 0.5 V RMS at emitter terminal of transistor. 2. After removing the short circuit between the collector and emitter circuit, insert unit to be tested and adjust VCC and VEE for VCB = 6 V dc, IE = 2 mA dc. 3. Read rb'CC on RF voltmeter scale (rb'CC in picoseconds = 10 times meter indication in millivolts) (1 millivolt = 10 picoseconds). 4. External interlead shield to isolate the collector lead from the emitter and base lead. FIGURE 5. Collector-base time constant test circuit (an equivalent circuit may be used). 14 MIL-PRF-19500/343F 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification. 6.2 Acquisition requirements. Acquisition documents must specify the following: a. Title, number, and date of this specification. b. Issue of DoDISS to be cited in the solicitation, and if required, the specific issue of individual documents referenced (see 2.2.1). c. Lead formation and finish may be specified (see 3.4.1). d. Type designation and product assurance level. e. For die acquisition, the JANHC or JANKC letter version shall be specified (see figure 3). f. Surface mount designation if applicable. g. Packaging requirements (see 5.1). 6.3 Supersession information. Devices covered by this specification supersede the manufacturers' and users' Part or Identifying Number (PIN). The term PIN is equivalent to the term part number which was previously used in this specification. This information in no way implies that manufacturers' PINs are suitable as a substitute for the military PIN. 6.4 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers' List (QML) whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center Columbus, DSCC-VQE, P.O. Box 3990, Columbus, OH 43216-5000 15 MIL-PRF-19500/343F 6.5 Suppliers of JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the applicable letter version (example JANHCA2N2857) will be identified on the QPL. Die ordering information Manufacturer PIN 34156 2N2857 JANHCA2N2857, JANKCA2N2857 * 6.6. Changes from previous issue. The margins of this specification are marked with asterisks to indicate where changes from the previous issue were made. This was done as a convenience only and the Government assumes no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the requirements of this document based on the entire content irrespective of the marginal notations and relationship to the last previous issue. Custodians: Army - CR Navy - EC Air Force - 11 NASA - NA DLA - CC Preparing activity: DLA - CC (Project 5961-2554) Review activities: Army - AR, MI, SM Navy - AS, MC Air Force - 19, 71, 99 16 STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL INSTRUCTIONS 1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, 6, and 7. 3. The preparing activity must provide a reply within 30 days from receipt of the form. NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER MIL-PRF-19500/343F 2. DOCUMENT DATE 8 February 2002 3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER, TYPES 2N2857 AND 2N2857UB JAN, JANTX, JANTXV AND JANS, JANHC AND JANKC. 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.) 5. REASON FOR RECOMMENDATION 6. SUBMITTER a. NAME (Last, First, Middle initial) b. ORGANIZATION c. ADDRESS (Include Zip Code) d. TELEPHONE (Include Area Code) COMMERCIAL DSN FAX EMAIL 7. DATE SUBMITTED 8. PREPARING ACTIVITY a. Point of Contact Alan Barone c. ADDRESS Defense Supply Center Columbus ATTN: DSCC-VAC P.O. Box 3990 Columbus, OH 43216-5000 DD Form 1426, Feb 1999 (EG) b. TELEPHONE Commercial DSN FAX EMAIL 614-692-0510 850-0510 614-692-6939 [email protected] IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Standardization Program Office (DLSC-LM) 8725 John J. Kingman, Suite 2533 Fort Belvoir, VA 22060-6221 Telephone (703) 767-6888 DSN 427-6888 Previous editions are obsolete WHS/DIOR, Feb 99