MOTOROLA Freescale Semiconductor, Inc. Order this document by MW5IC2030M/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line Freescale Semiconductor, Inc... RF LDMOS Wideband Integrated Power Amplifiers The MW5IC2030 wideband integrated circuit is designed for base station applications. It uses Motorola’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband On - Chip design makes it usable from 1930 to 1990 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, PHS, CDMA and W - CDMA. Final Application Typical CDMA Performance: VDD = 27 Volts, IDQ1 = 160 mA, IDQ2 = 230 mA, Pout = 5 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Power Gain — 23 dB Drain Efficiency — 20% ACPR @ 885 kHz Offset — - 49 dBc @ 30 kHz Channel Bandwidth Driver Application Typical CDMA Performance: VDD = 27 Volts, IDQ1 = 200 mA, IDQ2 = 550 mA, Pout = 1 Watt Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Power Gain — 24 dB ACPR @ 885 kHz Offset — - 64 dBc @ 30 kHz Channel Bandwidth • On - Chip Matching (50 Ohm Input, >4 Ohm Output) • Integrated Temperature Compensation Capability with Enable/Disable Function • On - Chip Current Mirror gm Reference FET for Self Biasing Application (1) • Integrated ESD Protection • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • Also Available in Gull Wing for Surface Mount • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel MW5IC2030MBR1 MW5IC2030GMBR1 1930 - 1990 MHz, 30 W, 26 V GSM/GSM EDGE, W - CDMA, PHS RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 1329 - 09 TO - 272 WB - 16 PLASTIC MW5IC2030MBR1 CASE 1329A - 03 TO - 272 WB - 16 GULL PLASTIC MW5IC2030GMBR1 PIN CONNECTIONS VDS1 GND VDS1 VRD2 VRG2 GND 1 2 3 4 5 16 15 GND NC RFin 6 14 VDS2/ RFout VRD1 VRG1/VGS1 VGS2 NC GND 7 8 9 10 11 13 12 NC GND VRD2 VRG2 RFin VDS2/RFout VRD1 VRG1/VGS1 VGS2 Quiescent Current Temperature Compensation Functional Block Diagram (Top View) NOTE: Exposed backside flag is source terminal for transistors. (1) Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.motorola.com/semiconductors/rf . Select Documentation/Application Notes - AN1987. REV 2 MOTOROLA RF DEVICE DATA Motorola, Inc. 2004 MW5IC2030MBR1 MW5IC2030GMBR1 1 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. MAXIMUM RATINGS Symbol Value Unit Drain - Source Voltage Rating VDSS 65 Vdc Gate - Source Voltage VGS - 0.5, +15 Vdc Storage Temperature Range Tstg - 65 to +175 °C Operating Junction Temperature TJ 200 °C Input Power Pin 20 dBm Symbol Value (1) Unit THERMAL CHARACTERISTICS Characteristic Freescale Semiconductor, Inc... Thermal Resistance, Junction to Case RθJC °C/W CDMA Application (Pout = 5 W CW) Stage 1, 27 Vdc, IDQ = 160 mA Stage 2, 27 Vdc, IDQ = 230 mA 4.89 1.75 PHS Application (Pout = 12.6 W CW) Stage 1, 26 Vdc, IDQ = 300 mA Stage 2, 26 Vdc, IDQ = 1300 mA 4.85 1.61 ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1B (Minimum) Machine Model A (Minimum) Charge Device Model 3 (Minimum) MOISTURE SENSITIVITY LEVEL Test Methodology Rating Per JESD 22 - A113 3 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit CDMA FUNCTIONAL TESTS (In Motorola 1.9 GHz Test Fixture, 50 οhm system) VDD = 27 Vdc, IDQ1 = 160 mA, IDQ2 = 230 mA, Pout = 5 W Avg., 1960 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ± 885 kHz Offset. Peak/Avg. = 9.8 dB @ 0.01 Probability on CCDF. Power Gain Gps 21.5 23 — dB Drain Efficiency ηD 18 20 — % IRL — - 18 - 10 dB ACPR — — - 47 dBc Input Return Loss Adjacent Channel Power Ratio Stability (0 dBm<Pout<43 dBm CW; 3:1 VSWR) Gain Flatness in 30 MHz BW, 1930 - 1990 MHz No Spurious > - 60 dBc GF — 0.2 0.3 dB (1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf . Select Documentation/Application Notes - AN1955. (continued) MW5IC2030MBR1 MW5IC2030GMBR1 MOTOROLA RF DEVICE DATA For More Information On This Product, 2 Go to: www.freescale.com Freescale Semiconductor, Inc. ELECTRICAL CHARACTERISTICS - (continued) (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit TYPICAL PERFORMANCES (In Motorola Test Fixture) VDD = 26 Vdc, IDQ1 = 160 mA, IDQ2 = 230 mA, Pout = 5 W, f = 1960 MHz Pout @ 1 dB Compression Point, CW P1dB — 30 — W Φ — ±1 — ° Delay — 2.25 — ns Part to Part Phase Variation ∆Φ — ±10 — ° Part to Part Gain Variation (Per Lot or Reel) ∆G — ±1.5 — dB — 10 — % Deviation from Linear Phase in 30 MHz BW (Characterized from 1930 - 1990 MHz) Delay Reference FET to RF FET Scaling Ratio Delta (Stages 1 and 2) Freescale Semiconductor, Inc... TYPICAL PHS PERFORMANCES (In Motorola Test Fixture, 50 οhm system) VDD = 26 Vdc, IDQ1 = 260 mA, IDQ2 = 1100 mA, Pout = 12.6 W, 1.9 GHz, PHS Signal Mask Power Gain Gps — Power Added Efficiency PAE Input Return Loss IRL ACPR Adjacent Channel Power Ratio (600 kHz Offset in 192 kHz BW) MOTOROLA RF DEVICE DATA 24 — dB — 25 — % — - 15 — dB — - 72 — dBc MW5IC2030MBR1 MW5IC2030GMBR1 3 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Z10 VD1 + C19 C9 C6 VRD2 C12 1 16 2 NC 15 Z9 3 VBIAS R2 R3 R6 RF INPUT C5 4 C13 + VD2 C20 Z8 RF OUTPUT 5 Z1 Z3 Z2 6 C1 VRG1/VGS1 VBIAS1 C11 R4 C15 + C2 C3 Z6 VBIAS2 C10 Z1 Z2 Z3 Z4 Z5 Z6 + Quiescent Current Temperature Compensation 8 9 C18 Z11 R2 Z5 7 C14 R1 Z4 14 C7 VRD1 Freescale Semiconductor, Inc... C8 NC 10 NC NC 13 11 R5 C16 0.465″ 0.518″ 0.282″ 0.221″ 0.489″ 0.471″ x 0.041″ Microstrip x 0.041″ Microstrip x 0.235″ Microstrip x 0.081″ Microstrip x 0.041″ Microstrip x 0.025″ Microstrip C4 Z7 12 C17 Z7 Z8 Z9 Z10 Z11 PCB 0.200″ x 0.025″ Microstrip 0.274″ x 0.050″ Microstrip 0.615″ x 0.050″ Microstrip 0.450″ x 0.025″ Microstrip 0.340″ x 0.014″ Microstrip Rogers 4350, 0.020″, εr = 3.5 Figure 1. MW5IC2030MBR1(GMBR1) Test Circuit Schematic Table 1. MW5IC2030MBR1(GMBR1) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 1.8 pF High Q Chip Capacitor (0603) 600S1R8AT - 250 - T ATC C2 1.5 pF High Q Chip Capacitor (0603) 600S1R5AT - 250 - T ATC C3 3.9 pF High Q Chip Capacitor (0603) 600S3R9AT - 250 - T ATC C4 6.8 pF High Q Chip Capacitor (0805) 600S6R8AT - 250 - T ATC C5, C6 100 pF Class 1 NPO Chip Capacitors (0805) GRM215CB1H101CZ01D Murata C7 4.7 pF Class 1 NPO Chip Capacitor (0805) GRM215CB1H4R7CZ01D Murata C8, C9, C10, C11 0.1 µF X7R Chip Capacitors (1206) C1206C104K5RACT Kemet C12, C13, C14, C15, C16 0.01 µF Class 2 X7R Chip Capacitors (0805) C0805C103K5RACT Kemet C17, C18 22 µF, 35 V Electrolytic Capacitors ECE - 1AVKS220 Panasonic C19, C20 330 µF, 50 V Electrolytic Capacitors ECA - 1HM331 Panasonic R1, R3 1 kW, 5% Chip Resistors (0805) RK73B2ALTD102J KOA Speer R2 499 W, 1% Chip Resistor (0805) RK73H2ATD4990F KOA Speer R4, R5, R6 100 kW, 5% Chip Resistors (0805) RK73B2ALTD104J KOA Speer MW5IC2030MBR1 MW5IC2030GMBR1 MOTOROLA RF DEVICE DATA For More Information On This Product, 4 Go to: www.freescale.com Freescale Semiconductor, Inc. RD2 C19 VD1 VD2 MW5IC2030M Rev 3 C20 RG2 C9 R3 C8 C6 C12 C5 C13 C3 C7 CUTOUT AREA Freescale Semiconductor, Inc... R6 C17 C18 C2 C1 C15 C16 C14 C4 R5 R4 C10 RD1 R2 C11 R1 VG2 VD1 VG1RG1 Figure 2. MW5IC2030MBR1(GMBR1) Test Circuit Component Layout MOTOROLA RF DEVICE DATA MW5IC2030MBR1 MW5IC2030GMBR1 5 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS 30 29 21 VDD = 27 Vdc, Pout = 10 W (Avg.) IDQ1 = 160 mA, IDQ2 = 230 mA 100 kHz Tone Spacing 28 ηD −26 IRL 20 −28 −30 19 −32 −34 18 1880 IMD 1900 1920 1940 1960 1980 2000 2020 −36 2040 −16 −16 −17 −18 −19 −20 −21 IRL, INPUT RETURN LOSS (dB) 22 G ps , POWER GAIN (dB) 31 Gps η, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) 32 η, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) 23 Figure 3. Two - Tone Broadband Performance 9 Gps ηD 23 G ps , POWER GAIN (dB) 8 7 6 VDD = 27 Vdc, Pout = 1 W (Avg.) IDQ1 = 160 mA, IDQ2 = 230 mA 100 kHz Tone Spacing 22 5 −46 21 −47 IRL −48 20 −49 IMD −50 19 1880 1900 1920 1940 1960 1980 2000 2020 −51 2040 −17 −18 −19 −20 −21 IRL, INPUT RETURN LOSS (dB) 24 f, FREQUENCY (MHz) Figure 4. Two - Tone Broadband Performance IDQ1 = 200 mA IDQ2 = 300 mA 25 24 IMD, INTERMODULATION DISTORTION (dBc) 26 G ps , POWER GAIN (dB) Freescale Semiconductor, Inc... f, FREQUENCY (MHz) IDQ1 = 160 mA IDQ2 = 230 mA 23 IDQ1 = 120 mA IDQ2 = 175 mA 22 21 VDD = 27 Vdc Center Frequency = 1960 MHz 100 kHz Tone Spacing 20 19 0.1 1 10 100 Pout, OUTPUT POWER (WATTS) AVG. −10 −15 −20 −25 −30 −35 −40 −45 −50 −55 −60 −65 −70 −75 −80 0.1 VDD = 27 Vdc IDQ1 = 160 mA, IDQ2 = 230 mA f = 1960 MHz, 100 kHz Tone Spacing 3rd Order 5th Order 7th Order 1 10 100 Pout, OUTPUT POWER (WATTS) AVG. Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Intermodulation Distortion Products versus Output Power MW5IC2030MBR1 MW5IC2030GMBR1 MOTOROLA RF DEVICE DATA For More Information On This Product, 6 Go to: www.freescale.com Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS 50 VDD = 27 Vdc, Pout = 30 W (PEP) IDQ1 = 160 mA, IDQ2 = 230 mA Two−Tone Measurements, Center Frequency = 1960 MHz −30 3rd Order −35 5th Order −40 −45 −50 7th Order −55 P3dB = 44.91 dBm (31 W) 48 P1dB = 44.69 dBm (29.5 W) 47 46 45 44 −30_C 43 Actual 25_C 42 41 40 39 −60 0.1 1 10 100 15 16 17 18 21 −35 15 −40 IM3 −45 ACPR 5 −50 0 −55 32 33 34 35 36 37 25 26 27 −30_C Gps TC = −30_C 23 38 39 40 30 22 25 21 20 20 ηD 41 0 1 10 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (WATTS) Figure 10. Power Gain and Power Added Efficiency versus Output Power 40 30 VDD = 12 V 19 24 V 28 V S21 (dB) 20 32 V 5 0 0 −5 S21 23 21 10 100 Figure 9. 2 - Carrier W - CDMA IM3, Power Gain, and Efficiency versus Output Power 22 15 VDD = 27 Vdc IDQ1 = 160 mA IDQ2 = 230 mA f = 1960 MHz 17 24 35 85_C 19 25 40 85_C 25_C 24 45 25_C 18 31 24 25 G ps , POWER GAIN (dB) 20 30 23 50 26 −30 Gps 29 22 27 IM3 (dBc), ACPR (dBc) η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) −25 10 20 Figure 8. Pulse CW Output Power versus Input Power 30 ηD 19 Pin, INPUT POWER (dBm) Figure 7. Intermodulation Distortion Products versus Tone Spacing G ps , POWER GAIN (dB) Freescale Semiconductor, Inc... TWO−TONE SPACING (MHz) 25 VDD = 27 Vdc IDQ1 = 160 mA, IDQ2 = 230 mA Center Frequency = 1960 MHz 85_C η, DRAIN EFFICIENCY (%) −25 Ideal 49 20 −10 10 −15 0 −20 S11 18 VDD = 27 Vdc IDQ1 = 160 mA, IDQ2 = 230 mA Center Frequency = 1960 MHz Two−Tone Measurement, 100 kHz Spacing 17 16 15 0 20 40 60 −10 −25 −20 −30 −30 1000 1500 2000 2500 Pout, OUTPUT POWER (WATTS) PEP f, FREQUENCY (MHz) Figure 11. Power Gain versus Output Power Figure 12. Broadband Frequency Response MOTOROLA RF DEVICE DATA −35 3000 MW5IC2030MBR1 MW5IC2030GMBR1 7 For More Information On This Product, Go to: www.freescale.com S11 (dB) −20 Pout , OUTPUT POWER (dBm) IMD, INTERMODULATION DISTORTION (dBc) −15 Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS 25 25_C 24 23 85_C 22 21 SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc) 1930 1940 1950 1960 1970 1980 1990 2000 −60 4 20 TC = −30_C 2 10 Source EVM = 0.60% 0 10 Figure 14. EVM and Drain Efficiency versus Output Power TC = −30_C 85_C 25_C SR @ 400 kHz −70 25_C −75 −30_C 85_C SR @ 600 kHz −85 0 10 100 Figure 15. Spectral Regrowth at 400 kHz and 600 kHz versus Output Power −40 −45 −50 VDD = 27 Vdc IDQ1 = 160 mA, IDQ2 = 230 mA f = 1960 MHz, 9−Channel IS−95 CDMA −55 −60 ACPR −65 −70 ALT2 −75 ALT1 −80 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 Pout, IS−95 OUTPUT POWER (dBm) Figure 16. IS - 95 Spectral Regrowth versus Output Power 1.E+09 −20 _ −30 TC = −30_C 25_C −40 85_C −50 −60 0 1 10 100 MTTF FACTOR (HOURS X AMPS2) −10 0 100 Figure 13. Power Gain versus Frequency −65 −80 25_C Pout, OUTPUT POWER (WATTS) VDD = 27 Vdc IDQ1 = 160 mA IDQ2 = 230 mA EDGE Modulation f = 1960 MHz −55 30 f, FREQUENCY (MHz) −45 −50 85_C 1 Pout, OUTPUT POWER (WATTS) INSERTION PHASE ( ) Freescale Semiconductor, Inc... 20 1920 VDD = 27 Vdc, Pout = 5 W (CW) IDQ1 = 160 mA, IDQ2 = 230 mA Two−Tone Measurements, Center Frequency = 1960 MHz 6 40 ηD VDD = 27 Vdc IDQ1 = 160 mA IDQ2 = 230 mA f = 1960 MHz η, DRAIN EFFICIENCY (%) TC = −30_C 8 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ALT 1 & 2, ALTERNATE 1 & 2 CHANNEL POWER RATIO (dBc) G ps , POWER GAIN (dB) 26 EVM, ERROR VECTOR MAGNITUDE (% rms) 27 2nd Stage 1.E+08 1.E+07 1st Stage 1.E+06 90 100 110 120 130 140 150 160 170 180 190 TJ, JUNCTION TEMPERATURE (°C) Pout, OUTPUT POWER (WATTS) CW Figure 17. Insertion Phase versus Output Power This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 18. MTTF Factor versus Junction Temperature MW5IC2030MBR1 MW5IC2030GMBR1 MOTOROLA RF DEVICE DATA For More Information On This Product, 8 Go to: www.freescale.com Freescale Semiconductor, Inc. f = 1800 MHz Zload* f = 1800 MHz f = 2200 MHz f = 2200 MHz Zin Freescale Semiconductor, Inc... Zo = 50 Ω VDD = 27 V, IDQ1 = 160 mA, IDQ2 = 230 mA Zin f MHz Zin Ω Zload Ω 1800 49.7 - j9.3 6.9 - j0.3 1850 47.7 - j9.8 6.9 - j0.3 1930 44.8 - j8.5 6.7 - j0.1 1960 44.0 - j7.3 6.6 - j0.0 1990 44.6 - j5.6 6.6 + j0.1 2050 45.7 - j8.6 6.4 + j0.4 2100 42.5 - j8.3 6.2 + j0.8 2150 40.6 - j6.8 6.1 + j1.1 2200 39.3 - j5.0 6.0 + j1.6 = Device input impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Z in Z load Figure 19. Series Equivalent Input and Load Impedance MOTOROLA RF DEVICE DATA MW5IC2030MBR1 MW5IC2030GMBR1 9 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. PACKAGE DIMENSIONS r1 C A B 2X E1 B aaa A NOTE 6 M PIN ONE INDEX 4X aaa M b1 C A 6X e1 4X e2 2X e3 e Freescale Semiconductor, Inc... D1 aaa b3 aaa M C A b2 C A D M M 10X b aaa M C A ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ N E VIEW Y - Y DATUM PLANE H A c1 C SEATING PLANE F Y ZONE "J" E2 Y A1 7 A2 NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 (0.15) PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE −H−. 5. DIMENSIONS "b", "b1", "b2" AND "b3" DO NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 (0.13) TOTAL IN EXCESS OF THE "b", "b1", "b2" AND "b3" DIMENSIONS AT MAXIMUM MATERIAL CONDITION. 6. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. 7. DIM A2 APPLIES WITHIN ZONE "J" ONLY. CASE 1329 - 09 ISSUE J TO - 272 WB - 16 PLASTIC MW5IC2030MBR1 DIM A A1 A2 D D1 E E1 E2 F M N b b1 b2 b3 c1 e e1 e2 e3 r1 aaa INCHES MIN MAX .100 .104 .038 .044 .040 .042 .928 .932 .810 BSC .551 .559 .353 .357 .346 .350 .025 BSC .600 −−− .270 −−− .011 .017 .037 .043 .037 .043 .225 .231 .007 .011 .054 BSC .040 BSC .224 BSC .150 BSC .063 .068 .004 MILLIMETERS MIN MAX 2.54 2.64 0.96 1.12 1.02 1.07 23.57 23.67 20.57 BSC 14.00 14.20 8.97 9.07 8.79 8.89 0.64 BSC 15.24 −−− 6.86 −−− 0.28 0.43 0.94 1.09 0.94 1.09 5.72 5.87 .18 .28 1.37 BSC 1.02 BSC 5.69 BSC 3.81 BSC 1.6 1.73 .10 MW5IC2030MBR1 MW5IC2030GMBR1 MOTOROLA RF DEVICE DATA For More Information On This Product, 10 Go to: www.freescale.com Freescale Semiconductor, Inc. E1 r1 aaa M C A B 2X A B 4X PIN ONE INDEX aaa M b1 C A 6X e1 4X e2 2X e3 b3 aaa M C A e D1 Freescale Semiconductor, Inc... aaa M D M b2 C A b C A 10X aaa M ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ NOTE 6 N E2 VIEW Y - Y E DETAIL Y DATUM PLANE H A2 A c1 E2 Y Y L1 t L GAGE PLANE A1 DETAIL Y C DIM A A1 A2 D D1 E E1 E2 L L1 M N b b1 b2 b3 c1 e e1 e2 e3 r1 t aaa SEATING PLANE NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 (0.15) PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE −H−. 5. DIMENSIONS "b", "b1", "b2" AND "b3" DO NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 (0.13) TOTAL IN EXCESS OF THE "b", "b1", "b2" AND "b3" DIMENSIONS AT MAXIMUM MATERIAL CONDITION. 6. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SINK. INCHES MIN MAX .100 .104 .001 .004 .099 .110 .928 .932 .810 BSC .429 .437 .353 .357 .346 .350 .018 .024 .01 BSC .600 −−− .270 −−− .011 .017 .037 .043 .037 .043 .225 .231 .007 .011 .054 BSC .040 BSC .224 BSC .150 BSC .063 .068 2° 8° .004 MILLIMETERS MIN MAX 2.54 2.64 0.02 0.10 2.51 2.79 23.57 23.67 20.57 BSC 10.90 11.10 8.97 9.07 8.79 8.89 4.90 5.06 0.25 BSC 15.24 −−− 6.86 −−− 0.28 0.43 0.94 1.09 0.94 1.09 5.72 5.87 .18 .28 1.37 BSC 1.02 BSC 5.69 BSC 3.81 BSC 1.6 1.73 2° 8° .10 CASE 1329A - 03 ISSUE B TO - 272 WB - 16 GULL PLASTIC MW5IC2030GMBR1 MOTOROLA RF DEVICE DATA MW5IC2030MBR1 MW5IC2030GMBR1 11 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc... Freescale Semiconductor, Inc. Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2004 HOW TO REACH US: USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MW5IC2030MBR1 MW5IC2030GMBR1 MOTOROLA RF DEVICE DATA ◊For More Information On This Product, MW5IC2030M/D 12 Go to: www.freescale.com