Power Transistors 2SC5104 Silicon NPN triple diffusion planar type VCBO 500 V VCES 500 V VCEO 400 V Emitter to base voltage VEBO 7 V Peak collector current ICP 6 A Collector current IC 3 A Base current IB 1.2 A PC Junction temperature Tj Storage temperature Tstg 1.5±0.1 2.0 1.0±0.1 0.8±0.1 150 ˚C –55 to +150 ˚C R0.5 R0.5 0 to 0.4 1.1 max. 5.08±0.5 2 1:Base 2:Collector 3:Emitter N Type Package (DS) 3 W 1.3 ■ Electrical Characteristics 6.0±0.3 2.54±0.3 1 30 3.4±0.3 14.7±0.5 Collector to base voltage 8.5±0.2 +0.4 Unit Ta=25°C 1:Base 2:Collector 3:Emitter N Type Package 3 3.0–0.2 Ratings dissipation 2 Unit: mm Symbol Collector power TC=25°C 10.5min. (TC=25˚C) Parameter Collector to emitter voltage 1 4.4±0.5 ■ Absolute Maximum Ratings 2.54±0.3 5.08±0.5 +0 ● 0.5max. 1.5–0.4 ● 0.8±0.1 10.0±0.3 ● 1.1max. 2.0 ● 1.0±0.1 1.5max. High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 4.4±0.5 ● Unit: mm 6.0±0.5 10.0±0.3 ■ Features 3.4±0.3 8.5±0.2 For high breakdown voltage high-speed switching (TC=25˚C) Parameter Symbol Conditions min typ Unit 100 µA 100 µA ICBO Emitter cutoff current IEBO VEB = 5V, IC = 0 Collector to emitter voltage VCEO IC = 10mA, IB = 0 400 hFE1 VCE = 5V, IC = 0.1A 10 hFE2 VCE = 2V, IC = 1.2A 8 Collector to emitter saturation voltage VCE(sat) IC = 1.5A, IB = 0.3A 1.0 V Base to emitter saturation voltage VBE(sat) IC = 1.5A, IB = 0.3A 1.5 V Transition frequency fT VCE = 10V, IC = 0.2A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf Forward current transfer ratio VCB = 500V, IE = 0 max Collector cutoff current IC = 1.5A, IB1 = 0.15A, IB2 = – 0.3A, VCC = 200V V 40 10 MHz 1.0 µs 3.0 µs 0.3 µs 1 Power Transistors 2SC5104 PC — Ta IC — VCE VCE(sat) — IC 6 Collector to emitter saturation voltage VCE(sat) (V) 40 (1) 30 20 10 5 Collector current IC (A) Collector power dissipation PC (W) TC=25˚C (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (PC=1.3W) IB=500mA 4 400mA 300mA 3 200mA 100mA 2 50mA 1 (2) (3) 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 10 3 TC=–25˚C 125˚C 25˚C 0.3 1 3 10 30 100 TC=125˚C 30 –25˚C 25˚C 10 3 0.3 1 3 0.01 0.1 0.3 1 100 30 10 3 100 Collector to base voltage VCB (V) 30 100 VCE=10V f=1MHz TC=25˚C 30 10 3 1 0.3 0.1 0.3 1 3 10 Area of safe operation (ASO) Pulsed tw=1ms Duty cycle=1% IC/IB=10 (2IB1=–IB2) VCC=200V TC=25˚C 30 10 3 tstg 1 ton tf 0.3 Non repetitive pulse TC=25˚C 30 0.1 10 ICP IC 3 t=1ms 10ms 1 300ms 0.3 0.1 0.03 0.01 0.01 30 10 100 0.03 1 3 Collector current IC (A) Collector current IC (A) IE=0 f=1MHz TC=25˚C 10 0.03 0.1 0.01 0.03 10 ton, tstg, tf — IC Switching time ton,tstg,tf (µs) Collector output capacitance Cob (pF) 0.1 100 3 0.1 Collector current IC (A) Cob — VCB 1 0.3 100 300 1 0.01 0.03 100 1000 300 1 Collector current IC (A) VCE=5V Collector current IC (A) 2 12 3 fT — IC 1000 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 30 0.3 10 TC=100˚C 25˚C –25˚C 10 hFE — IC IC/IB=5 0.1 0.1 8 IC/IB=5 30 Collector to emitter voltage VCE (V) VBE(sat) — IC 100 1 6 Transition frequency fT (MHz) 0 100 0 1 2 3 Collector current IC (A) 4 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Power Transistors 2SC5104 Area of safe operation, reverse bias ASO Reverse bias ASO measuring circuit 4.0 Lcoil=100µH IC/IB=5 (IB1=–IB2) TC=25˚C Collector current IC (A) 3.5 IC 3.0 L coil IB1 2.5 T.U.T –IB2 Vin 2.0 IC VCC 1.5 1.0 Vclamp tW 0.5 0 0 100 200 300 400 500 600 700 800 Collector to emitter voltage VCE (V) Rth(t) — t Thermal resistance Rth(t) (˚C/W) 103 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) 102 (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3