PD - 93865A IRGC15B120UB Die in Wafer Form Features • • • • • C GEN5 Non Punch Through (NPT) Technology UltraFast 10µs Short Circuit Capability Square RBSOA Positive VCE(on) Temperature Coefficient G Benefits • • • • Benchmark Efficiency above 20KHz Optimized for Welding, UPS, and Induction Heating Rugged with UltraFast Performance Excellent Current Sharing in Parallel Operation E 1200V IC(nom)=15A VCE(on) typ.=3.67V @ IC(nom) @ 25°C UltraFast IGBT Short Circuit Rated 150mm Wafer Electrical Characteristics (Wafer Form) Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Guaranteed (min, max) Collector-to-Emitter Saturation Voltage 2.85V min, 3.45V max Colletor-to-Emitter Breakdown Voltage 1200V min Gate Threshold Voltage 4.4V min, 6.0V max Zero Gate Voltage Collector Current 7µA max Gate-to-Emitter Leakage Current ± 1.1µA max Test Conditions IC = 10A, TJ = 25°C, VGE = 15V TJ = 25°C, ICES = 125µA, VGE = 0V VGE = VCE , TJ =25°C, IC = 125µA TJ = 25°C, VCE = 1200V TJ = 25°C, VGE = +/-20V Mechanical Data Nominal Backmetal Composition, (Thickness) Nominal Front Metal Composition, (Thickness) Dimensions Wafer Diameter Wafer Thickness, Tolerance Relevant Die Mechanical Dwg. Number Minimum Street Width Reject Ink Dot Size Ink Dot Location Recommended Storage Environment Al - Ti - Ni/V - Ag, (1kA - 1kA - 4kA - 6kA) 99% Al/1% Si, (4µm) 0.170" x 0.243" 150mm, with std. < 100 > flat 185µm, +/-15µm 01-5381 100µm 0.25mm diameter minimum Consistent throughout same wafer lot Store in original container, in dessicated nitrogen, with no contamination For optimum electrical results, die attach temperature should not exceed 300°C Recommended Die Attach Conditions Die Outline www.irf.com 03/20/02