PD- 91775 IRG4CH50UB IRG4CH50UB IGBT Die in Wafer Form C 1200 V Size 5 Ultra-Fast Speed 6" Wafer G E Electrical Characteristics ( Wafer Form ) Parameter VCE (on) V (BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Guaranteed (Min/Max) 4.5V Max. 1200V Min. 3.0V Min., 6.0V Max. 300 µA Max. ± 11 µA Max. Test Conditions IC = 10A, TJ = 25°C, VGE = 15V TJ = 25°C, ICES = 250µA, VGE = 0V VGE = VCE , TJ =25°C, IC =250µA TJ = 25°C, VCE = 1200V TJ = 25°C, VGE = +/- 20V Mechanical Data Norminal Backmetal Composition, Thickness: Norminal Front Metal Composition, Thickness: Dimensions: Wafer Diameter: Wafer thickness: Relevant Die Mechanical Dwg. Number Minimum Street Width Reject Ink Dot Size Ink Dot Location Recommended Storage Environment: Cr-Ni / V-Ag ( 1kA-2kA-.2.5kA ) 99% Al, 1% Si (4 microns) 0.257" x 0.260" 150mm, with std. < 100 > flat .015" + / -.003" 01-5227 100 Microns 0.25mm Diameter Minimum Consistent throughout same wafer lot Store in original container, in dessicated nitrogen, with no contamination Reference Standard IR packaged part ( for design ) : IRG4PH50U Die Outline 9/24/98