NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FXT38C ISSUE 1 SEPT 93 FEATURES * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp B C REFER TO BCX38 FOR GRAPHS E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 10 V Peak Pulse Current I CM 2 A Continuous Collector Current IC 800 mA Power Dissipation at Tamb=25°C Ptot 1 W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Sustaining Voltage UNIT CONDITIONS. 80 V IC=10µ A, IE=0 VCEO(sus) 60 V IC=10mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO 10 V IE=10µ A, IC=0 Collector Cut-Off Current ICBO 100 nA VCB=60V, IE=0 Emitter Cut-Off Current IEBO 100 nA VEB=8V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) 1.25 V IC=800mA, IB=8mA* Base-Emitter Turn-On Voltage VBE(on) 1.8 V IC=800mA, VCE=5V* Static Forward Current hFE Transfer Ratio TYP. MAX. 5000 10000 IC=100mA, VCE=5V* IC=500mA, VCE=5V* * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3-29