ILD256T Dual AC Input Phototransistor Small Outline Surface Mount Optocoupler FEATURES • Each Channel: Guaranteed CTR Symmetry, 2:1 Maximum • Bidirectional AC Input • Industry Standard SOIC-8 Surface Mountable Package • Standard Lead Spacing, .05" • Available only on Tape and Reel Option (Conforms to EIA Standard 481-2) DESCRIPTION Dimensions in inches (mm) .120±.002 (3.05±.05) .240 (6.10) These circuit elements are constructed with a standard SOIC-8A footprint. The product is well suited for telecom applications such as ring detection or off/on hook status, given its bidirectional LED input and guaranteed current transfer ratio (CTR) of 20% at IF= 10 mA. Maximum Ratings Emitter (Each Channel) Continuous Forward Current.......................30 mA Power Dissipation at 25°C ......................... 50 mW Derate Linearly from 25°C..................0.66 mW/°C Detector (Each Channel) Collector-Emitter Breakdown Voltage ............ 70 V Emitter-Collector Breakdown Voltage ........... 7.0 V Power Dissipation ................................... 125 mW Derate Linearly from 25°C..................1.67 mW/°C Package Total Package Dissipation at 25°C Ambient (LED + Detector) .................................. 300 mW Derate Linearly from 25°C....................4.0 mW/°C Storage Temperature ................ –55°C to +150°C Operating Temperature .............–55°C to +100°C Soldering Time at 260°C ........................... 10 sec. 8 C K/A 2 CL .154±.002 (3.91±.05) A/K 3 K/A 4 7 E 6 C 5 E .016 (.41) Pin One I.D. The ILD256T is a dual channel optocoupler. Each channel consists of two infrared emitters connected in anti-parallel and coupled to a silicon NPN phototransistor detector. A/K 1 .015±.002 (.38±.05) .230±.002 (5.84±.05) .004 (.10) .008 (.20) .008 (.20) .050(1.27) Typ. .040 (1.02) .020±.004 (.51±.10) 2 Plcs. 7° .0585±.002 (1.49±.05) 40° .125±.002 (3.18±.05) 5°Max. R.010 Lead coplanarity (.25) Max. ±.001 Max. Table 1. Characteristics TA=25°C Sym. Min. Typ. Max. Unit Condition Forward Voltage VF — 1.2 1.55 V IF=±10 mA Reverse Current IR — 0.1 100 mA VR=6.0 V BVCEO 70 — — V IC=10 µA BVECO 7.0 — — V IE=10 µA ICEO — 5.0 50 nA VCE=10 V DC Current Transfer CTR 20 — — % IF=±10 mA VCE=5.0 V Symmetry CTR at + 10 mA — 0.5 1.0 2.0 — — Saturation Voltage, Collector-Emitter VCEsat — — 0.4 — IF=±16 mA IC=2.0 mA Isolation Voltage, Input to Output VIO 3000 — — VRMS t=1.0 sec. Emitter (Each Channel) Detector (Each Channel) Breakdown Voltage Leakage Current, Collector-Emitter Package CTR at -10 mA 2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA www.infineon.com/opto • 1-888-Infineon (1-888-463-4636) OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany www.osram-os.com • +49-941-202-7178 1 April 3, 2000-19 Figure 5. Normalized saturated CTR 60 1.0 40 0.8 Normalized CTR IF - LED Forward Current - mA Figure 1. LED forward current versus forward voltage 85°C 20 25°C 0 -55°C -20 -40 0.6 0.4 Normalized to: IF = 10 mA, VCE =10 V TA = 25°C 0.2 -60 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 0.0 .1 VF - LED Forward Voltage - V Figure 2. Forward voltage versus forward current VCE(sat) =0.4 V TA = 25°C TA = 50°C TA = 70°C TA = 100°C 1 10 IF - LED Current - mA 100 Figure 6. Normalized CTRcb 1.5 1.3 Normalized CTRcb TA = -55°C 1.2 TA = 25°C 1.1 1.0 0.9 TA = 100°C 0.8 1.0 TA = 25°C TA = 50°C TA = 70°C 0.5 0.0 0.7 .1 1 10 IF - Forward Current - mA .1 100 10000 ICB - Photocurrent - µA t τ DF = /t 25°C 100 70°C 10 1 .1 10 10-6 10-5 10-4 10-3 10-2 10-1 100 101 t - LED Pulse Duration - s .1 700 VCE=0.4 V, TA=25°C HFE - Transistor Gain Normalized to: IF = 10 mA, VCE =10V TA = 25°C TA = 25°C TA = 50°C TA = 70°C TA = 100°C 1.0 0.5 0.0 .1 1 10 IF - LED Current - mA 100 100 2.0 1.5 1 10 IF - LED Current - mA Figure 8. Base current versus If and HFE Figure 4. Normalized CTR versus If and Ta Normalized CTR 100 1000 τ Duty Factor .005 .01 1000 .02 .05 .1 .2 .5 100 1 10 IF - LED Current - mA Figure 7. Photocurrent versus LED current Figure 3. Peak LED current versus duty factor, Tau If(pk) - Peak LED Current - mA Normalized to: IF = 10 mA TA = 25°C 500 10 400 300 1 200 100 100 2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA www.infineon.com/opto • 1-888-Infineon (1-888-463-4636) OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany www.osram-os.com • +49-941-202-7178 600 1 10 100 IB - Base Current - µA IF - LED Current - mA VF - Forward Voltage - V 1.4 .1 1000 ILD256T 2 April 3, 2000-19 Figure 11. Base emitter voltage versus base Figure 9. Normalized HFE versus Ib, Ta 1.5 Normalized to: IB = 10 µA TA = 25°C VCE = 10 V 1.0 Normalized Saturated HFE Normalized HFE 1.2 NHFE -20°C NHFE 25°C NHFE 50°C NHFE 70°C 0.8 0.6 1.0 TA = -20°C TA = 25°C TA = 50°C TA = 70°C VCE(sat) = 0.4 V 0.5 0.0 0.4 1 10 100 IB - Base Current - µA 1 1000 ICEO - Collector-Emitter - nA 1000 100 TA = 25°C 10 1 .1 .01 .001 0.4 0.5 0.6 0.7 VBE - Base Emitter Voltage - V 10 100 IB - Base Current - µA 1000 Figure 12. Collector-emitter leakage current versus temperature Figure 10. Normalized saturated HFE versus Ib IB - Base Current - µA Normalized to: HFE at VCE = 10V, ICB = 10 µA TA = 25°C 0.8 2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA www.infineon.com/opto • 1-888-Infineon (1-888-463-4636) OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany www.osram-os.com • +49-941-202-7178 105 104 103 102 VCE = 10 V 101 Typical 100 10-1 10-2 -20 0 20 40 60 80 100 TA - Ambient Temperature - °C ILD256T 3 April 3, 2000-19