JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD 本资料由东莞长电代理：FUYAT CO.，LTD提供0769-85388861 SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1623 TRANSISTOR (NPN) FEATURES 1. BASE High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA High voltage:VCEO=50V z z 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 100 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Symbol Parameter Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 5 V Collector cut-off current ICBO VCB=60V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA DC current gain hFE VCE=6V,IC=1mA 90 200 600 Collector-emitter saturation voltage VCE(sat) IC=100mA,IB=10mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=100mA,IB=10mA 1 V fT Transition frequency VCE=6V,IC=10mA 250 MHz CLASSIFICATION OF hFE Rank Range Marking L4 L5 L6 L7 90-180 135-270 200-400 300-600 L4 L5 L6 L7 PDF 文件使用 "pdfFactory Pro" 试用版本创建 www.fineprint.cn Typical Characteristics PDF 文件使用 "pdfFactory Pro" 试用版本创建 www.fineprint.cn 2SC1623 PDF 文件使用 "pdfFactory Pro" 试用版本创建 www.fineprint.cn