MOSFET SMD Type AO3409 SOT-23 SOT23-3L SOT-23L Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 ID = -2.6 A (VGS = -10V) (VGS = -10V) RDS(ON) < 200m (VGS = -4.5V) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Symbol Rating Unit VDS -30 V VGS TA=25 ID -2.2 TA=70 Pulsed Drain Current Power Dissipation IDM TA=25 PD Themal Resistance. Junction-to-Case Junction and Storage Temperature Range V A -20 1.4 W 1 TA=70 Themal Resistance. Junction-to-Ambient 20 -2.6 RthJA 100 /W RthJC 63 /W TJ, TSTG -55 to 150 +0.1 0.38-0.1 +0.1 0.97-0.1 RDS(ON) < 130m 1 0.55 VDS (V) = -30V +0.1 1.3-0.1 +0.1 2.4-0.1 Features 1 Gate 1.Base 2 Source 2.Emitter 3 Drain 3.collector MOSFET SMD Type AO3409 Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Symbol VDSS Testconditons Min Typ Max -30 ID=250 A, VGS=0V Unit V VDS=-24V, VGS=0V -1 VDS=-24V, VGS=0V ,TJ=55 -5 IGSS VDS=0V, VGS= 20V 100 nA Gate Threshold Voltage VGS(th) VDS=VGS ID=-250 A -1.9 -3 V Static Drain-Source On-Resistance rDS(ON) VGS=-10V, ID=-2.6A Zero Gate Voltage Drain Current Gate-Body leakage current IDSS -1 VGS=-10V, ID=-2.6A TJ=125 VGS=-4.5V, ID=-2A On state drain current ID(ON) Forward Transconductance gfs Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg Total Gate Charge (10V) VGS=-4.5V, VDS=-5V -5 VDS=-5V, ID=-5A 3 130 150 166 200 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz m m A 3.8 302 Qg Total Gate Charge (4.5V) 97 135 A S 370 pF 50.3 pF 37.8 pF 12 18 6.8 9 nC 2.4 nC Qgs 1.6 nC Gate Drain Charge Qgd 0.95 nC Turn-On DelayTime tD(on) 7.5 ns Turn-On Rise Time tr 3.2 ns Turn-Off DelayTime tD(off) 17 ns 6.8 ns Gate Source Charge VGS=-4.5V, VDS=-15V, ID=-2.6A VGS=-10V, VDS=-15V, RL=5.8 ,RGEN=3 Turn-Off Fall Time tf Body Diode Reverse Recovery Time trr IF=-2.6A, dI/dt=100A/ s 16.8 Body Diode Reverse Recovery Charge Qrr IF=-2.6A, dI/dt=100A/ s 10 Maximum Body-Diode Continuous Current IS Diode Forward Voltage VSD IS=-1A,VGS=0V * Repetitive rating, pulse width limited by junction temperature. -0.82 22 ns nC -2 A -1 V MOSFET AO3409 Typical Characteristics SMD Type AO3409 MOSFET