MOSFET DIP Type N-Channel MOSFET KX120N06 (8.70) 2.80 ± 0.10 ■ Features 4.50 ± 0.20 9.90 ± 0.20 1.30 ± 0.10 (1.70) TO-220 ø3.60 ± 0.10 +0.10 1.30 –0.05 (45 ● Special process technology for high ESD capability 18.95MAX. (3.70) (3.00) 9.20 ± 0.20 (1.46) ● RDS(ON) ＜ 6.5mΩ (VGS = 10V) 15.90 ± 0.20 ● VDS (V) = 60V ● ID = 100 A (VGS = 10V) 1.27 ± 0.10 1.52 ± 0.10 1 2 3 10.08 ± 0.30 (1.00) 13.08 ± 0.20 ) ● Fully characterized Avalanche voltage and current 0.80 ± 0.10 D 2.54TYP [2.54 ± 0.20 ] +0.10 0.50 –0.05 2.54TYP [2.54 ± 0.20 ] 2.40 ± 0.20 1 GATE 2 DRAIN 3 SOURCE 10.00 ± 0.20 G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current Ta=25℃ Tc=100℃ ID Pulsed Drain Current IDM Power Dissipation PD Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range V 100 70 A 320 150 W 1.07 W/℃ EAS 550 mJ RthJC 0.94 ℃/W TJ 175 Tstg -55 to 175 Derating factor Single pulse avalanche energy Unit ℃ www.kexin.com.cn 1 MOSFET DIP Type N-Channel MOSFET KX120N06 ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Symbol Test Conditions VDSS ID=250μA, VGS=0V Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V Gate Threshold Voltage VGS(th) VDS=VGS , ID=250μA Static Drain-Source On-Resistance RDS(On) VGS=10V, ID=40A VDS=5V, ID=40A Typ 60 65 2 nA 3 4 V 5.7 6.5 mΩ 60 S gFS Output Capacitance Coss Reverse Transfer Capacitance Crss 260 Total Gate Charge Qg 85 Gate Source Charge Qgs 4800 VGS=0V, VDS=30V, f=1MHz VGS=10V, VDS=30V, ID=30A Qgd 28 td(on) 16.8 Turn-On Rise Time tr Turn-Off DelayTime td(off) trr Body Diode Reverse Recovery Charge Qrr Maximum Body-Diode Continuous Current IS VSD 10.8 ns 55 13.6 IF= 40A, dI/dt= 100A/μs,TJ = 25°C (Note.1) IS=20A,VGS=0V Note.1: Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. www.kexin.com.cn nC 18 Turn-On DelayTime VGS=10V, VDS=30V, ID=1A,RG=2.5Ω pF 440 Gate Drain Charge Body Diode Reverse Recovery Time V ±100 Ciss tf Unit μA Forward Transconductance Turn-Off Fall Time Max 1 Input Capacitance Diode Forward Voltage 2 Min 38 53 nC 90 A 1.2 V MOSFET DIP Type N-Channel MOSFET KX120N06 ■ Typical Characterisitics www.kexin.com.cn 3 MOSFET DIP Type N-Channel MOSFET KX120N06 ■ Typical Characterisitics . 4 www.kexin.com.cn