LIUJING KK500A800

KK500A800~1800V
Y38KKE
国标型-快速晶闸管(平板式)
Chinese Type Fast Thyristors (Capsule Version)
L iu j in g re ct i f ie r c o . , L t d .
FEATURES
1). Interdigitated amplifying gates
2). Fast turn-on and high di/dt
3). Low switching losses
TYPICAL APPLICATIONS
IT(AV)
VDRM/VRRM
tq
ITSM
I2t
822A
800~1800V
24~50μs
9.0KA
405 103A2S
1). Inductive heating
2). Electronic welders
3). Self-commutated inverters
THE MAIN PARAMETERS
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
Tj(℃)
IT(AV)
Mean forward current
180° half sine wave 50Hz
Double side cooled, Ths=55℃
125
VDRM
VRRM
Repetitive peak off-state voltage
Repetitive peak reverse voltage
VDRM&VRRM,tp=10ms
VDSM&VRSM= VDRM&VRRM+100V
125
IDRM
IRRM
Repetitive peak off-state current
Repetitive peak reverse current
VD= VDRM
VR= VRRM
125
ITSM
I2t
VTO
rT
VTM
dv/dt
Surge on-state current
I2T for fusing coordination
Threshold voltage
On-state slop resistance
Peak on-state voltage
Critical rate of rise of off-state voltage
10ms half sine wave
VR=0.6VRRM
125
di/dt
Critical rate of rise of on-state current
Irm
trr
Qrr
Reverse recovery current
Reverse recovery time
Recovery charge
tq
Circuit commutated turn-off time
IGT
VGT
IH
VGD
Rth(j-h)
Fm
Tstg
Wt
Size
Gate trigger current
Gate trigger voltage
Holding current
Non-trigger gate voltage
Thermal resistance
Junction to heatsink
Mounting force
Stored temperature
Weight
Package box size
www.china-liujing.com
Min
VALUE
Type
800
Max
UNIT
822
A
1800
V
40
mA
KA
A2s*103
V
mΩ
V
V/μs
ITM=1400A, F=15KN
VDM=0.67VDRM
125
125
9.0
405
1.36
0.53
2.10
500
VDM= 67%VDRM to1000A,
Gate pulse tr ≤0.5μs IGM=1.5A
125
1200
A/μs
ITM=800A,tp=1000μs,
di/dt=-20A/μs,
VR=50V
125
160
A
μs
μC
ITM=800A,tp=1000μs, VR =50V
dv/dt=30V/μs ,di/dt=-20A/μs
125
24
50
μs
VA=12V, IA=1A
25
VDM=67%VDRM
250
2.5
400
125
40
0.9
20
0.3
mA
V
mA
V
0.035
℃ /W
20
140
KN
℃
g
mm
125
69
4.3
149
At 180°sine, double side cooled
Clamping force 15KN
10
-40
270
95×95×50
1/3
KK500A800~1800V
PERFORMANCE CURVES FIGURE
Max. junction To heatsink
Thermai Impedance Vs.Time
Peak On-state Voltage<..(
Vs.Peak On-state Current
Transient thermal impedance,e
C/W
Instantaneous on-state voltage,volts
T J=125e
C
Instantaneous on-state current,amperes
Time,seconds
Fig.1
2
450
400
Maximum I t(Kamps ,secs)
9
I t 405-Vs.Time
350
2
2
Total peak half-sine surge current,kA
Fig.2
9
Surge Current
Vs.Cycles
300
250
200
150
100
1
10
Cycles at 50Hz
Time,m.seconds
Fig.3
Fig.4
Gate characteristic at 25e
C junction temperature
Gate Trigger Zone
at varies temperature
90$
PGM=100W
(100嘕 s spulse
PD[
Gate voltage,VGTˈV
Gate voltageVGT ,V
PLQ
25e
C
-30e
C
-10e
C
125e
C
3*:
Gate curren,IGT,A
Fig.5
www.china-liujing.com
Gate curren,IGTˈmA
Fig.6
2/3
KK500A800~1800V
26f0.5
OUTLINE
E-mail: rectifi[email protected]
YUEQING LIUJING RECTIFIER CO., LTD
Sale Departmant: Liujing Building, Yueqing City,
Zhejiang Province
Add: Wanao Industrial Zone, Yueqing city,
Zhejiang Province
Tel: 0086-577-62519692 0089-577-62519693
Fax: 0086-577-62518692
International Export: 0086-577-62571902
Technical Support: 0086-15868768965
After Service: 400-6606-086
http://www.china-liujing.com
http://www.liujingdianqi.cn
http://www.cnrectifier.com
http://www.cnthyristor.com.cn
MSN: [email protected]
[email protected]
打造最具竞争力的电力半导体产品
To be the most competitive Power Semiconductor
Devices manufactory.
LIUJING reserves the right to change limits, test conditions and dimensions.
윤정은 이 칼타로그 중에 데이트, 테스트 조건, 외형사이즈에 대한 최종 해석권을 가지고 있습니다.
www.china-liujing.com
3/3