IRF IRF7402

PD - 93851A
IRF7402
HEXFET® Power MOSFET
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Generation V Technology
Ultra Low On-Resistance
N-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
A
A
D
1
8
S
2
7
D
S
3
6
D
G
4
5
D
S
VDSS = 20V
RDS(on) = 0.035Ω
T o p V ie w
Description
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device
for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characterstics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared or wave soldering techniques.
Power dissipation of greater than 0.8 W is possible in a
typical PCB mount application.
SO-8
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
dv/dt
TJ, TSTG
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Max.
6.8
5.4
54
2.5
1.6
0.02
± 12
5.0
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambient „
Max.
Units
50
°C/W
1
2/22/00
IRF7402
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
20
–––
–––
–––
0.70
6.1
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
VGS = 0V, ID = 250µA
0.024 ––– V/°C Reference to 25°C, ID = 1mA
0.035
VGS = 4.5V, ID = 4.1A ƒ
Ω
0.050
VGS = 2.7V, ID = 3.5A ƒ
––– –––
V
VDS = VGS, ID = 250µA
––– –––
S
VDS = 10V, ID = 1.9A
––– 1.0
VDS = 16V, VGS = 0V
µA
––– 25
VDS = 16V, VGS = 0V, TJ = 125°C
––– 100
VGS = 12V
nA
––– -100
VGS = -12V
14
22
ID = 3.8A
2.0 3.0
nC VDS = 16V
6.3 9.5
VGS = 4.5V, See Fig. 6 and 12 ƒ
5.1 –––
VDD = 10V
47 –––
ID = 3.8A
ns
24 –––
RG = 6.2Ω
32 –––
RD = 2.6Ω ƒ
650 –––
VGS = 0V
300 –––
pF
VDS = 15V
150 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
I SM
VSD
t rr
Q rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
2.5
–––
–––
54
–––
–––
–––
–––
51
69
1.2
77
100
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 3.8A, VGS = 0V ƒ
TJ = 25°C, IF = 3.8A
di/dt = 100A/µs ƒ
D
S
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
‚ ISD ≤ 3.8A, di/dt ≤ 96A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
2
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
„ When mounted on 1 inch square copper board, t<10 sec
… This data sheet has curves & data from IRF7601
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IRF7402
100
100
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOT TOM 1.5V
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOT TOM 1.5V
TO P
I , D rain-to-S ou rc e C urre nt (A )
D
I , D rain-to-S ou rc e C urre nt (A )
D
TO P
10
1
20 µ s P U LS E W ID TH
TJ = 2 5°C
A
1.5V
0.1
0.1
1
10
1 .5V
1
20 µ s P U LS E W ID TH
TJ = 1 50 °C
A
0.1
10
0.1
1
V D S , D rain-to-S ourc e V oltage (V )
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
R D S (on ) , D rain-to-S ource O n R esistance
(N orm alized)
I D , D rain-to-So urce C urren t (A )
100
10
T J = 1 5 0 °C
T J = 25 °C
1
V DS = 10V
2 0 µ s P UL S E W ID TH
0.1
1.5
2.0
2.5
3.0
3.5
V G S , G ate-to -So urce Voltag e (V)
Fig 3. Typical Transfer Characteristics
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10
V D S , D rain-to-S ourc e V oltage (V )
A
I D = 3.8A
1.5
1.0
0.5
V G S = 4.5 V
0.0
-60
-40
-20
0
20
40
60
80
100 120 140 160
T J , Junction T em perature (°C )
Fig 4. Normalized On-Resistance
Vs. Temperature
3
A
IRF7402
10
V GS
C iss
C rs s
C o ss
C , Capacitance (pF)
1000
=
=
=
=
0V ,
f = 1MHz
C g s + C g d , C d s S H O R TE D
C gd
C ds + C g d
V G S, G ate-to-S ource V oltage (V )
1200
C iss
800
C oss
600
400
C rss
200
0
10
8
6
4
2
FO R TE S T CIR C U IT
S E E FIG U R E 9
0
A
1
I D = 3 .8A
V D S = 16 V
0
100
12
16
20
A
24
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
I D , Drain Current (A)
I S D , Reverse D rain C urrent (A)
8
Q G , Total G ate C harge (nC )
V D S , D rain-to-S ourc e V oltage (V )
100
10
T J = 15 0°C
T J = 2 5°C
1
V G S = 0V
0.1
0.4
0.8
1.2
1.6
2.0
V S D , S ourc e-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
4
A
2.4
100us
10
1ms
TC = 25 ° C
TJ = 150 ° C
Single Pulse
1
1
10ms
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7402
8.0
RD
V DS
I D , Drain Current (A)
VGS
6.0
D.U.T.
RG
+
- V DD
4.5V
4.0
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
2.0
VDS
90%
0.0
25
50
75
100
TC , Case Temperature
125
150
( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
100
D = 0.50
0.20
10
0.10
0.05
P DM
0.02
1
t1
0.01
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7402
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
QG
.3µF
4.5V
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
IG
Charge
Fig 12b. Gate Charge Test Circuit
0.3
RDS(on) , Drain-to-Source On Resistance ( Ω )
RDS(on) , Drain-to-Source On Resistance ( Ω )
Fig 12a. Basic Gate Charge Waveform
VGS = 2.5V
0.2
0.1
VGS =5V
0.0
A
0
3
6
9
12
15
0.05
0.04
D
ID
D , Drain Current (A)
Fig 13. Typical On-Resistance Vs. Drain
Current
6
= 5.7A
0.03
0.02
A
2
I
ID
Current Sampling Resistors
4
V
GS
6
8
, Gate-to-Source Voltage (V)
Fig 14. Typical On-Resistance Vs. Gate
Voltage
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IRF7402
SO-8 Package Details
D IM
D
-B -
5
8
E
-A -
1
7
2
5
A
6
3
e
6X
5
H
0.2 5 (.0 10 )
4
M
A M
θ
e1
K x 45 °
-C-
0 .10 (.00 4)
B 8X
0 .25 (.01 0)
A1
L
8X
6
C
8X
M C A S B S
N O TE S :
1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2.
2 . C O N TRO L LIN G D IM EN SIO N : IN C H .
3 . D IM EN SIO N S A RE SH O W N IN M ILLIM E TE R S (IN C HE S).
4 . O U TLIN E CO N F O RM S TO JED E C O U TLINE M S -0 12 AA .
5 D IM E NS IO N D O ES N O T IN C LU D E M O LD PR O TR US IO N S
M O LD P R O TR U SIO NS N O T TO EXCE ED 0 .2 5 (.00 6).
6 D IM E NS IO N S IS TH E LE N G TH O F L EA D FO R SO L DE R IN G TO A SU B STRA TE..
M IN
M AX
.0532
.0688
1 .35
1 .75
.0040
.0098
0 .10
0 .25
B
.014
.018
0 .36
0 .46
C
.0 075
.0 098
0 .19
0.25
D
.1 89
.1 96
4 .80
4.98
E
.150
.157
3 .81
3 .99
e1
A
M IL LIM E T E R S
MAX
A1
e
θ
IN C H E S
M IN
.050 B A S IC
1.2 7 B A S IC
.025 B A S IC
0.6 35 B A S IC
H
.2 284
.2 440
K
.011
.019
0 .28
5 .80
0 .48
6.20
L
0 .16
.050
0 .41
1.27
θ
0°
8°
0°
8°
R E CO M M E ND E D F O O TP R IN T
0 .72 (.02 8 )
8X
6 .46 ( .25 5 )
1 .78 (.07 0)
8X
1.27 ( .0 50 )
3X
SO-8 Part Marking
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7
IRF7402
SO-8 Tape and Reel
TER M IN AL N UM B ER 1
1 2.3 ( .484 )
1 1.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
F EE D D IRE C TIO N
N OT E S :
1 . CO NT RO L L ING DIM E NSIO N : M IL L IM E T E R .
2 . AL L DIM E NS ION S ARE SHO W N IN M ILL IM E TER S (INC HE S ).
3 . OU TL IN E CO N FO RM S T O E IA -4 8 1 & E IA -5 4 1 .
33 0.00
(12.992)
M AX .
14.4 0 ( .566 )
12.4 0 ( .488 )
N O T ES :
1 . CO NT RO LL ING D IM EN SIO N : M ILLIME TER .
2 . O U TLIN E C O NF O RM S T O E IA-48 1 & E IA -54 1.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
Data and specifications subject to change without notice. 2/2000
8
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