Si4503DY New Product Vishay Siliconix N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel (Channel 2) 30 P-Channel (Channel 1) –8 rDS(on) () ID (A) 0.018 @ VGS = 10 V 8.8 0.027 @ VGS = 4.5 V 7.2 0.042 @ VGS = –4.5 V –4.5 0.060 @ VGS = –2.5 V –3.7 D TrenchFETr Power MOSFET APPLICATIONS D Level Shift D Load Switch D2 S1 SO-8 S1 1 8 D1 G1 2 7 D2 S2 3 6 D2 G2 4 5 D2 G1 G2 D1 Top View S2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol N-Channel 10 sec. P-Channel Steady State 10 sec. Steady State Drain-Source Voltage VDS 30 –8 Gate-Source Voltage VGS "20 "8 Continuous Drain Current (TJ = 150_C) _ a, b TA = 25_C TA = 70_C Pulsed Drain Current ID Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b IS TA = 25_C TA = 70_C Operating Junction and Storage Temperature Range PD V 8.8 6.5 –4.5 –3.8 7.0 5.2 –3.6 –3.0 IDM 30 A –20 2.0 1.1 –1.2 2.27 1.25 1.38 1.0 1.45 0.8 0.88 0.64 TJ, Tstg Unit 0.9 W _C –55 to 150 THERMAL RESISTANCE RATINGS N-Channel Parameter Symbol t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Steady-State Steady-State RthJA RthJF P- Channel Typ Max Typ Max 45 55 75 90 85 100 100 125 25 30 53 65 Unit _C/W C/W Notes a. Surface Mounted on FR4 Board. b. t v 10 sec Document Number: 71770 S-20894—Rev. B, 17-Jun-02 www.vishay.com 1 Si4503DY New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typa Max Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb Diode Forward Voltageb VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 A N-Ch 0.8 VDS = VGS, ID = –250 A P-Ch –0.45 VDS = 0 V, VGS = "20 V N-Ch "100 VDS = 0 V, VGS = "8 V P-Ch "100 VDS = 24 V, VGS = 0 V N-Ch 1 VDS = –6.4 V, VGS = 0 V P-Ch –1 VDS = 24 V, VGS = 0 V, TJ = 55_C N-Ch 5 V VDS = –6.4 V, VGS = 0 V, TJ = 55_C P-Ch VDS = 5 V, VGS = 10 V N-Ch 30 VDS = –5 V, VGS = –4.5 V P-Ch –20 VGS = 10 V, ID = 8.8 A N-Ch 0.015 0.018 VGS = –4.5 V, ID = –4.5 A P-Ch 0.034 0.042 VGS = 4.5 V, ID = 7.2 A N-Ch 0.022 0.027 VGS = –2.5 V, ID = –3.7 A 0.060 nA A –5 A P-Ch 0.048 VDS = 15 V, ID = 8.8 A N-Ch 20 VDS = –15 V, ID = –4.5 A P-Ch 13 IS = 2.0 A, VGS = 0 V N-Ch 0.71 1.1 IS = –1.2 A, VGS = 0 V P-Ch –0.70 –1.1 N-Ch 14.5 20 P-Ch 15 25 N-Ch 3.3 P-Ch 3.0 N-Ch 6.6 P-Ch 2.0 N-Ch 13 20 P-Ch 20 40 S V Dynamica Total Gate Charge Qg N-Channel VDS = 15 V, VGS = 5 V, ID = 8.8 A Gate-Source Charge Qgs P-Channel VDS = –4 V, VGS = –5 V, ID = –4.5 A Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time tr N-Channel VDD = 15 V, RL = 15 ID ^ 1 A, VGEN = 10 V, RG = 6 td(off) P-Channel VDD = –4 V, RL = 4 ID ^ –1 A, VGEN = –4.5 V, RG = 6 Fall Time tf Source-Drain Reverse Recovery Time trr IF = 1.7 A, di/dt = 100 A/s nC N-Ch 9 18 P-Ch 50 100 N-Ch 35 50 P-Ch 110 220 N-Ch 17 30 P-Ch 60 120 N-Ch 35 70 P-Ch 60 100 ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 s, duty cycle v 2%. www.vishay.com 2 Document Number: 71770 S-20894—Rev. B, 17-Jun-02 Si4503DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N−CHANNEL Output Characteristics Transfer Characteristics 50 50 VGS = 10 thru 4 V 40 I D – Drain Current (A) I D – Drain Current (A) 40 30 20 3V 10 30 20 TC = 125_C 10 25_C 0 0 2 4 6 8 0 0.0 10 0.5 VDS – Drain-to-Source Voltage (V) 1.0 On-Resistance vs. Drain Current 2.0 2.5 3.0 3.5 4.0 4.5 Capacitance 1800 1500 0.04 C – Capacitance (pF) DS(on) – On-Resistance ( ) 1.5 VGS – Gate-to-Source Voltage (V) 0.05 r –55_C 0.03 VGS = 4.5 V 0.02 VGS = 10 V 0.01 Ciss 1200 900 600 Coss 300 Crss 0 0.00 0 6 12 18 24 0 30 6 ID – Drain Current (A) 18 24 30 VDS – Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 10 1.8 VDS = 15 V ID = 8.8 A r DS(on) – On-Resistance () (Normalized) V GS – Gate-to-Source Voltage (V) 12 8 6 4 1.6 VGS = 10 V ID = 8.8 A 1.4 1.2 1.0 0.8 2 0.6 0 0 5 10 15 Qg – Total Gate Charge (nC) Document Number: 71770 S-20894—Rev. B, 17-Jun-02 20 25 0.4 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) www.vishay.com 3 Si4503DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N−CHANNEL Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.10 DS(on) – On-Resistance ( ) TJ = 150_C 10 TJ = 25_C r I S – Source Current (A) 50 0.08 ID = 8.8 A 0.06 0.04 0.02 0.00 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 2 VSD – Source-to-Drain Voltage (V) 4 8 10 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 50 0.6 0.4 40 ID = 250 A 0.2 Power (W) V GS(th) Variance (V) 6 –0.0 –0.2 30 20 –0.4 –0.6 10 –0.8 0 –1.0 –50 –25 0 25 50 75 100 TJ – Temperature (_C) 125 150 0.01 0.1 1 10 30 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 73_C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 www.vishay.com 4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 71770 S-20894—Rev. B, 17-Jun-02 Si4503DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N−CHANNEL Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P−CHANNEL Output Characteristics Transfer Characteristics 20 20 2.5 V TC = –55_C 16 16 25_C I D – Drain Current (A) I D – Drain Current (A) VGS = 5 thru 3 V 2V 12 1.8 V 8 1.5 V 4 12 125_C 8 4 1V 0 0 1 2 3 0 0.0 4 0.5 VDS – Drain-to-Source Voltage (V) 1.0 1.5 2.5 3.0 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 2500 0.20 VGS = 1.8 V Ciss 2000 0.16 C – Capacitance (pF) r DS(on) – On-Resistance ( ) 2.0 0.12 0.08 VGS = 2.5 V 1500 1000 Coss VGS = 4.5 V 500 0.04 Crss 0.00 0 0 4 8 12 ID – Drain Current (A) Document Number: 71770 S-20894—Rev. B, 17-Jun-02 16 20 0 2 4 6 8 VDS – Drain-to-Source Voltage (V) www.vishay.com 5 Si4503DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P−CHANNEL Gate Charge On-Resistance vs. Junction Temperature 1.50 VDS = 4 V ID = 4.5 A 4 r DS(on) – On-Resistance () (Normalized) V GS – Gate-to-Source Voltage (V) 5 3 2 1 0 0 4 8 12 VGS = 4.5 V ID = 4.5 A 1.25 1.00 0.75 –50 16 –25 Qg – Total Gate Charge (nC) 20 25 50 75 100 125 150 TJ – Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.20 r DS(on)– On-Resistance ( ) I S – Source Current (A) 10 TJ = 150_C TJ = 25_C 1 0.00 0 0.16 0.12 ID = 4.5 A 0.08 0.04 0.00 0.25 0.50 0.75 1.00 1.25 0 1.50 1 VSD – Source-to-Drain Voltage (V) 2 3 4 5 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power, Juncion-To-Ambient 0.4 80 Power (W) V GS(th) Variance (V) 60 0.2 ID = 250 A 40 0.0 20 –0.2 –50 –25 0 25 50 75 TJ – Temperature (_C) www.vishay.com 6 100 125 150 0 0.001 0.01 0.1 1 10 Time (sec) Document Number: 71770 S-20894—Rev. B, 17-Jun-02 Si4503DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P−CHANNEL Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 85_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 100 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 Document Number: 71770 S-20894—Rev. B, 17-Jun-02 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 7