FAIRCHILD NZT749

NZT749
NZT749
PNP Current Driver Transistor
4
• This device is designed for power amplifier, regulator and switching
circuit where speed is important.
• Sourced from process 5P.
3
2
1
SOT-223
1. Base 2, 4. Collector 3. Emitter
Absolute Maximum Ratings* Ta=25°C unless otherwise noted
Symbol
VCEO
Collector-Emitter Voltage
Parameter
Value
-25
Units
V
VCBO
VEBO
Collector-Base Voltage
-35
V
Emitter-Base Voltage
-5.0
IC
Collector Current (DC)
V
-4.0
A
TJ, TSTG
Operating and Storage Junction Temperature Range
- 55 ~ 150
°C
- Continuous
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Off Characteristics
Parameter
Test Condition
Min.
Max.
Units
V(BR)CEO
Collector-Emitter Voltage
IC = -10mA, IB = 0
-25
V
V(BR)CBO
Collector-Base Voltage
IC = -100µA, IE = 0
-35
V
V(BR)EBO
Emitter-Base Voltage
IE = -10µA, IC = 0
-5.0
ICBO
Collector Cut-off Current
VCB = -30V, IE = 0
-100
nA
IEBO
Emitter Cut-off Current
VEB = -4V, IC = 0
-0.1
µA
V
On Characteristics *
hFE
DC Current Gain
VCE = -2.0V, IC = -50mA
VCE = -2.0V, IC = -1.0A
VCE = -2.0V, IC = -2.0A
70
80
65
300
VCE(sat)
Collector-Emitter Saturation Voltage
IC = -1.0A, IB = -100mA
-0.3
VBE(sat)
Base-Emitter Saturation Voltage
IC = -1.0A, IB = -100mA
-1.25
V
V
VBE(on)
Base-Emitter On Voltage
IC = -1.0A, VCE = -2.0V
-1.0
V
Small Signal Characteristics
fT
Current gain Bandwidth Product
VCE = -5.0V, IC = -50mA
f = 100MHz
75
MHz
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Thermal Characteristics Ta=25°C unless otherwise noted
Symbol
PD
Parameter
Total Device Dissipation
Derate above 25°C
Max.
1.2
9.7
Units
W
mW/°C
RθJA
Thermal Resistance, Junction to Ambient
103
°C/W
©2004 Fairchild Semiconductor Corporation
Rev. A, July 2004
NZT749
Package Dimensions
3.00 ±0.10
4.60 ±0.25
6.50 ±0.20
(0.89)
(0.95)
(0.46)
1.60 ±0.20
2.30 TYP
7.00 ±0.30
(0.60)
0.70 ±0.10
(0.95)
+0.04
0.06 –0.02
(0.60)
3.50 ±0.20
1.75 ±0.20
MAX1.80
0.65 ±0.20
0.08MAX
SOT-223
°
10
+0.10
0.25 –0.05
0°~
Dimensions in Millimeters
©2004 Fairchild Semiconductor Corporation
Rev. A, July 2004
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2004 Fairchild Semiconductor Corporation
Rev. I11