DISCRETE SEMICONDUCTORS DATA SHEET M3D454 BGY280 UHF amplifier module Preliminary specification 2000 Nov 15 Philips Semiconductors Preliminary specification UHF amplifier module BGY280 PINNING - SOT559A FEATURES • Dual band GSM amplifier PIN • 3.6 V nominal supply voltage DESCRIPTION 1,2,3,6,9,10,11,14 Ground • 33.5 dBm output power for GSM1800 4 RF output 2 (1800 MHz) • 35.5 dBm output power for GSM900 5 VS2 (1800 MHz) • Easy output power control by DC voltage. 7 VS1 (900 MHz) • Internal input and output matching. 8 RF output 1 (900 MHz) 12 RF input 1 (900 MHz) APPLICATIONS 13 VC1 (900 MHz) • Digital cellular radio systems with Time Division Multiple Access (TDMA) operation (GSM systems) in two frequency bands: 880 to 915 MHz and 1710 to 1785 MHz. 15 VC2 (1800 MHz) 16 RF input 2 (1800 MHz) 1 DESCRIPTION The BGY280 is a power amplifier module in a SOT559A leadless package with a plastic cap. The dimensions are 13.75 x 11 x 1.7 mm. The module consists of two separated line-ups. One for GSM900 and one for GSM1800. Internal power control, input and output matching. 2 3 16 4 15 5 14 6 13 7 12 8 11 Bottom view 10 9 MBL031 Fig.1 Simplified outline QUICK REFERENCE DATA RF performance at Tmb = 25 °C. MODE OF OPERATION Pulsed; δ = 2 : 8 f (MHz) VS (V) VC (V) PL (dBm) Gp (dB) η (%) ZS, ZL (Ω) 880 to 915 3.6 ≤2.2 typ. 35.5 typ. 35.5 47 50 1710 to 1785 3.6 ≤2.2 typ. 33.5 typ. 33.5 40 50 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VC1,2 = 0; RFIN = off − 7 V VC1,2 > 0.5 V; RFIN = on − 5.5 V DC control voltage − 3 V PD1, PD2 input drive power − 10 mW PL1 load power 1 − 4 W PL2 load power 2 − 3 W Tstg storage temperature −40 +100 °C Tmb operating mounting base temperature −30 +100 °C VS1, VS2 DC supply voltage VC1, VC2 2000 Nov 15 2 Philips Semiconductors Preliminary specification UHF amplifier module BGY280 CHARACTERISTICS ZS = ZL = 50 Ω; PD1,2 = 0 dBm; VS1 = VS2 = 3.6 V; VC1,2 ≤ 2.2 V; Tmb = 25 °C; tp = 575 µs; δ = 2 : 8; f = 880 to 915 MHz (GSM900); f = 1710 to 1785 MHz (GSM1800); unless otherwise specified. SYMBOL IL PARAMETER leakage current CONDITIONS load power GSM 900 TYP. MAX. UNIT − − 10 µA − − 2 mA VC1 = 2.2 V 34.5 35.5 − dBm VC1 = 2.2 V; VS1 = 3.2 V; Tmb = 25 °C 34 35 − dBm VC2 = 2.2 V 32.5 33.5 − dBm VC2 = 2.2 V; VS1 = 3.2 V; Tmb = 25 °C 32 33 − dBm VC1,2 = 0.2 V ICM1, ICM2 peak control current PL1 MIN. PL2 load power GSM 1800 GP1 power gain GSM900 PL1 = 35.5 dBm − 35.5 − dB GP2 power gain GSM1800 PL2 = 33 dBm − 33.5 − dB η1 efficiency GSM900 PL1 = 35 dBm 40 45 − % η2 efficiency GSM1800 PL2 = 32 dBm 33 38 − % harmonics GSM900 PL1 = 34 dBm − − −40 dBc harmonics GSM1800 PL2 = 32 dBm − − −35 dBc input VSWR of active device VS1,2 = 3.2 to 5 V; PL1 = 34 dBm; PL2 = 32 dBm − 3:1 input VSWR of inactive device VS1,2 = 3.2 to 5 V; VC1,2 ≤ 0.5 V − 8:1 isolation GSM900 VC1,2 = 0.5 V; PD1,2 = 3 dBm − −54 −37 dBm isolation GSM1800 VC1,2 = 0.5 V; PD1,2 = 3 dBm − −42 −37 dBm − −21 −20 dBm H2, H3 VSWRin second harmonic isolation PL1 = 35 dBm from GSM900 into GSM1800 maximum slope −5 dBm < PL1,2 < PL max 120 − 200 dB/V tr carrier rise time PL1 = 6 to 34 dBm; PL2 = 4 to 32 dBm; time to settle within −0.5 dB of final PL − 1.5 2 µs tf carrier fall time PL1 = 6 to 34 dBm; PL2 = 4 to 32 dBm; time to fall below −37 dBm − 1.5 2 µs PL1 ≤ 34 dBm; bandwidth = 100 kHz; f = 925 - 935 MHz; fc = 897.5 MHz − − −71 dBm PL1 ≤ 34 dBm; bandwidth = 100 kHz; f = 935 - 960 MHz; fc = 897.5 MHz − −82 −80 dBm noise power GSM1800 PL2 ≤ 32 dBm; bandwidth = 100 kHz; f = 1805 - 1880 MHz; fc = 1747.5 MHz − −80 −73 dBm AM/PM conversion PD1,2 = −0.5 to 0.5 dBm; PL1,2 = constant during measurement for PL1 = 6 to 34 dBm and PL2 = 4 to 32 dBm − − 6 deg/dB PL1 = 6 to 34 dBm; PL2 = 4 to 32 dBm; f = 100 kHz; PD1,2 = 5.4 % − 25 % noise power GSM900 Pn AM/AM conversion 2000 Nov 15 3 Philips Semiconductors Preliminary specification UHF amplifier module SYMBOL BGY280 PARAMETER CONDITIONS TX / RX conversion PL1 PL1 PL2 PL2 MIN. TYP. MAX. UNIT = 34 dBm; f = 915 MHz (925 MHz) / PD (905 MHz) = 32 dBm; f = 1785 MHz (1765 MHz) / PD (1805 MHz) − 25 − dB control bandwidth PL1 = 6 to 34 dBm; PL2 = 4 to 32 dBm; 1 1.5 − MHz stability VS1,2 = 3.2 to 5 V; VC = 0 to 2.2 V; PD1,2 = 0 to 3 dBm; PL1 < 34.8 dBm; PL2 < 32.5 dBm; VSWR ≤ 6 : 1 through all phases − − −60 dBc ruggedness VS1,2 = 5 V; PD1,2 = 0 to 3 dBm; PL1 = 34.8 dBm; PL2 = 32.5 dBm; VSWR ≤ 6 : 1 through all phases no degradation VS1,2 = 4.2 V; PD1,2 = 0 to 3 dBm; PL1 = 34.8 dBm; PL2 = 32.5 dBm; VSWR ≤ 10 : 1 through all phases no degradation 40 50 η (%) 40 PL (dBm) 897.5MHz 35 1747.5MHz 1785MHz 30 1710MHz 915MHz 30 880MHz 20 25 10 20 0 1 1.5 2 2.5 20 25 30 VC (V) ZS = Z L = 50 Ω; VS = 3.6 V; P D = 0 dBm; Z S = Z L = 50 Ω; VS = 3.6 V; P D = 0 dBm; Tmb = 25 °C; δ = 2 : 8; tp = 575 µs. T mb = 25 °C; δ = 2 : 8; tp = 575 µs. Fig.2 Fig.3 Load power as a function of control voltage; typical values. 2000 Nov 15 4 35 40 PL (dBm) Efficiency as a function of load power; typical values. Philips Semiconductors Preliminary specification UHF amplifier module BGY280 -20 -20 H2 (dBc) H3 (dBc) -30 -30 1710MHz -40 -40 915MHz 915MHz 880MHz 880MHz -50 1785MHz 1710MHz -50 1785MHz -60 -60 20 25 30 35 PL (dBm) 40 20 25 30 ZS = Z L = 50 Ω; VS = 3.6 V; P D = 0 dBm; Z S = Z L = 50 Ω; VS = 3.6 V; P D = 0 dBm; Tmb = 25 °C; δ = 2 : 8; tp = 575 µs. T mb = 25 °C; δ = 2 : 8; tp = 575 µs. Fig.4 Fig.5 Second harmonic as a function of load power; typical values. 40 35 PL (dBm) 40 Third harmonic as a function of load power; typical values. 40 gain (dB) gain (dB) 30 (1) (2) (3) small signal gain small signal gain 30 (2) (1) (3) (4) (5) (6) 20 conversion gain 20 conversion gain 10 (4) (5) (6) 10 0 0 10 20 30 40 PL (dBm) 10 20 30 ZS = Z L = 50 Ω; P D = 0 dBm; VS = 3.6 V;T mb = 25 °C; f c = 1747.5 MHz; δ = 2 : 8; t p = 575 µs. Z S = Z L = 50 Ω; VS = 3.6 V; P D = 0 dBm; T mb = 25 °C; fc = 897.5 MHz; δ = 2 : 8; t p = 575 µs. (1) f = 1805 MHz (4) f = 1615 MHz (1) f = 925 MHz (4) f = 835 MHz (2) f = 1842.5 MHz (5) f = 1625.5 MHz (2) f = 942.5 MHz (5) f = 852.5 MHz (3) f = 1880 MHz (6) f = 1690 MHz (3) f = 960 MHz (6) f = 870 MHz Fig.6 Gain as a function of load power; typical values. 2000 Nov 15 Fig.7 5 40 PL (dBm) Gain as a function of load power; typical values. Philips Semiconductors Preliminary specification UHF amplifier module BGY280 40 output AM (%) 8 AM-PM (deg/dB) 30 6 20 4 1800MHz 900MHz 2 10 1800MHz 900MHz 0 0 0 10 20 30 40 PL (dBm) -10 0 10 20 30 40 PL (dBm) ZS = Z L = 50 Ω; VS = 3.6 V; P D = 0 dBm; Tmb = 25 °C; Z S = Z L = 50 Ω; VS = 3.6 V; P D = 0 dBm; Tmb = 25 °C; ∆ f = 100 kHz; input amplitude modulation = 5.4%; δ = 2 : 8; tp = 575 µs. δ = 2 : 8; t p = 575 µs. Fig.8 Fig.9 Output amplitude modulation as a function of load power; typical values. -60 noise (dBm) -70 RX=1845MHz -80 RX=942.5MHz -90 -100 0 10 20 30 PL (dBm) 40 ZS = Z L = 50 Ω; VS = 3.6 V; P D = 0 dBm; Tmb = 25 °C; δ = 2 : 8; tp = 575 µs. Fig.10 Noise as a function of load power; typical values. 2000 Nov 15 6 Output phase at PD = +0.5 dBm, relatively to output phase at P D = −0.5 dBm; typical values. Philips Semiconductors Preliminary specification UHF amplifier module BGY280 RF input RF output Z2 Z3 VS BGY280 GSM900 8 12 VC 7 13 15 VC 5 16 4 GSM1800 Z1 Z4 RF input RF output VS Fig.11 Test circuit List of components (See Fig 10 and 11) COMPONENT DESCRIPTION VALUE C1, C4 multilayer ceramic chip capacitor 100 µF; 40 V C2, C3 electrolytic capacitor 100 nF Z1, Z2, Z3, Z4 stripline; note 1 50 Ω R1, R2 metal film resistor 100 Ω; 0.6 W DIMENSIONS CATALOGUE NO. width 2.33 mm 2322 156 11001 Note 1. The striplines are on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (εr = 2.2); thickness 1⁄32 inch. 2000 Nov 15 7 Philips Semiconductors Preliminary specification UHF amplifier module BGY280 Fig.12 PCB testcircuit 2000 Nov 15 8 Philips Semiconductors Preliminary specification UHF amplifier module BGY280 PACKAGE OUTLINE SOT559A Leadless surface mounted package; plastic cap; 16 terminations e1 L1 (4×) L (12×) e1 b (12×) 1 2 Z6 (12×) L3 (4×) Z4 (12×) Z (2×) 3 Z5 (4×) 4 L2 16 b4 (4×) (4×) 15 5 e2 e b2 (2×) SOT559A Z1 (2×) Z3 (2×) 6 14 Z7 (6×) e b7 (4×) e2 7 13 b8 (4×) Z8 (6×) 8 12 11 10 b3 (4×) 9 b6 (4×) b5 (4×) b1 (2×) Z2 (2×) D Dimensions solderresist D1 A c E1 E pin 1 index 0 5 10 mm scale Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 2.5 2.3 3.5 3.3 2.9 2.7 1.1 0.9 1.5 1.3 1.1 0.9 3.8 3.6 1.5 1.3 e e1 e2 L L1 L2 L3 Z 3.3 4.4 1.1 0.9 1.6 1.4 0.6 0.4 1.6 1.4 2.6 2.4 DIMENSIONS (mm are the original dimensions) UNIT A b b1 b2 mm 1.9 1.5 1.1 0.9 3.5 3.3 2.9 5.275 4.2 2.7 5.075 4.0 OUTLINE VERSION b3 b4 b5 b6 b7 b8 1.2 0.625 0.8 1.0 0.425 0.6 0.9 0.7 c D JEDEC EIAJ E1 EUROPEAN PROJECTION ISSUE DATE 00-01-31 00-09-28 SOT559A 2000 Nov 15 E 0.55 14.05 13.6 11.3 10.85 2.6 0.45 13.45 13.3 10.7 10.55 REFERENCES IEC D1 9 Philips Semiconductors Preliminary specification UHF amplifier module BGY280 DATA SHEET STATUS DATA SHEET STATUS PRODUCT STATUS DEFINITIONS (1) Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. 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