PHILIPS BGM1011

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD128
BGM1011
MMIC wideband amplifier
Preliminary specification
2002 Jan 14
Philips Semiconductors
Preliminary specification
MMIC wideband amplifier
BGM1011
PINNING
FEATURES
• Internally matched to 50 Ω
PIN
• Very high gain (up to 37 dB at 2 Ghz)
DESCRIPTION
1
• Sloped gain curve for optimal performance
with output into lossy cable
VS
2, 5
GND2
3
RF out
• 14 dBm saturated output power at 1 GHz
4
GND1
• High linearity (23 dBm IP3(out) at 1 GHz)
6
RF in
• 40 dB isolation
APPLICATIONS
• LNB IF amplifiers
6
5
4
1
• Cable systems
6
3
• General purpose.
1
DESCRIPTION
2
Top view
Silicon Monolithic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a 6-pin
SOT363 SMD plastic package.
4
3
2, 5
MAM455
Marking code: C1-.
Fig.1 Simplified outline (SOT363) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VS
DC supply voltage
CONDITIONS
TYP.
MAX.
UNIT
5
6
V
IS
DC supply current
25.5
−
mA
|s21|2
insertion power gain
f = 1 GHz
30
−
dB
NF
noise figure
f = 1 GHz
4.7
−
dB
PL(sat)
saturated load power
f = 1 GHz
13.8
−
dBm
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
−
6
V
−
35
mA
−
200
mW
storage temperature
−65
+150
°C
Tj
operating junction temperature
−
150
°C
PD
maximum drive power
−
0
dBm
VS
DC supply voltage
IS
supply current
Ptot
total power dissipation
Tstg
RF input AC coupled
Ts ≤ 90 °C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2002 Jan 14
2
Philips Semiconductors
Preliminary specification
MMIC wideband amplifier
BGM1011
THERMAL RESISTANCE
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
VALUE
UNIT
300
K/W
thermal resistance from junction to solder point Ptot = 200 mW; Ts ≤ 90 °C
CHARACTERISTICS
VS = 5 V; IS = 25.5 mA; Tj = 25 °C unless otherwise specified.
SYMBOL
IS
|s21
PARAMETER
CONDITIONS
supply current
|2
insertion power gain
MIN.
20
TYP.
25.5
MAX.
32
UNIT
mA
f = 100 MHz
−
25
−
dB
f = 1 GHz
−
30
−
dB
f = 1.8 GHz
−
35
−
dB
f = 2.2 GHz
−
37
−
dB
f = 2.6 GHz
−
32
−
dB
f = 3 GHz
−
28
−
dB
RL IN
return losses input
f = 1 GHz
−
11
−
dB
f = 2.2 GHz
−
8
−
dB
RL OUT
return losses output
f = 1 GHz
−
18
−
dB
f = 2.2 GHz
−
12
−
dB
NF
noise figure
f = 1 GHz
−
4.7
−
dB
f = 2.2 GHz
−
4.6
−
dB
−
2.9
−
GHz
BW
bandwidth
at |s21|2 −3 dB below flat gain at 1 GHz
K
stability factor
f = 1 GHz
−
1.8
−
−
f = 2.2 GHz
−
0.9
−
−
f = 1 GHz
−
13.8
−
dBm
f = 2.2 GHz
−
10.8
−
dBm
at 1 dB gain compression; f = 1 GHz
−
12.2
−
dBm
at 1 dB gain compression; f = 2.2 GHz
−
7.7
−
dBm
PL(sat)
saturated load power
PL 1 dB
load power
IP3(in)
input intercept point
f = 1 GHz
−
−7
−
dBm
f = 2.2 GHz
−
−20
−
dBm
IP3(out)
output intercept point
f = 1 GHz
−
23
−
dBm
f = 2.2 GHz
−
16
−
dBm
2002 Jan 14
3
Philips Semiconductors
Preliminary specification
MMIC wideband amplifier
BGM1011
APPLICATION INFORMATION
Figure 2 shows a typical application circuit for the BGM1011 MMIC. The device is internally matched to 50 Ω, and
therefore does not need any external matching. The value of the input and output DC blocking capacitors C1, C2 should
be not more than 100 pF for applications above 100 MHz. Their values can be used to fine tune the input and output
impedance. However, when the device is operated below 100 MHz, the capacitor value should be increased.
The nominal value of the RF choke, L1 is 100 nH. At frequencies below 100 MHz this value should be increased to
200 nH. At frequencies between 1 and 3 GHz a much lower value must be used (e.g. 18 nH) to improve return losses.
For optimal results, a good quality chip inductor such as the TDK MLG 1608 (0603), or a wire-wound SMD type should
be chosen.
Capacitor, C4 and resistor, R1 are added for optimal supply decoupling.
Both the RF choke, L1 and the 22 nF supply decoupling capacitor, C3 should be located as closely as possible to the
MMIC.
Separate paths must be used for the ground planes of the ground pins GND1, GND2, and these paths must be as short
as possible. When using vias, use multiple vias per pin in order to limit ground path inductance.
Vs
C4
C3
1 [Vs]
R1
L1
C2
C1
RF in
RF out
6 [In]
Fig.2 Typical application
circuit
3 [Out]
BGM1011
SOT363
4 [GND1]
2,5 [GND2]
Fig.2 Typical application circuit
List of components used for the typical application; an amplifier for LNB IF output.
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS.
C1, C2
multilayer ceramic chip capacitor
100 pF
0603
C3
multilayer ceramic chip capacitor
22 nF
0603
C4
multilayer ceramic chip capacitor
5.6 pF
0603
R1
SMD resistor
10 Ω
0603
L1
SMD inductor
10 to 200 nH
0603
2002 Jan 14
4
Philips Semiconductors
Preliminary specification
MMIC wideband amplifier
BGM1011
90°
1.0
+1
45°
+0.5
135°
0.8
+2
0.6
+0.2
0.4
+5
0
0.2
0.5
3GHz
1
100MHz
2
0.2
5
0°
180°
0
-5
-0.2
-2
-135°
-45°
-0.5
-1
I S = 25.5 mA; VS = 5.0 V; PD = −35 dBm; ZO = 50 Ω.
1.0
-90°
Fig.3 Input reflection coefficient (s11); typical values.
90°
1.0
+1
135°
45°
+0.5
0.8
+2
0.6
+0.2
3GHz
100MHz
0.4
+5
0.2
0
0.2
1
5
2
0°
180°
-5
-0.2
-135°
I S = 25.5 mA; VS = 5.0 V; PD = −35 dBm; ZO = 50 Ω.
-2
-0.5
-45°
-1
1.0
-90°
Fig.4 Output reflection coefficient (s22); typical values.
2002 Jan 14
0
5
Philips Semiconductors
Preliminary specification
MMIC wideband amplifier
BGM1011
40
2
|s21|
(dB)
0
|s12|2
(dB)
-10
(3)
35
(2)
(1)
-20
30
-30
25
-40
20
-50
0
1000
2000
0
3000
1000
2000
PD = −35 dBm; ZO = 50 Ω.
(1) I S = 19.5 mA; VS= 4.5 V
(2) I S = 25.5 mA; VS= 5.0 V
(3) I S = 29.8 mA; VS= 5.5 V
I S = 25.5 mA; VS = 5.0 V; PD = −35 dBm; ZO = 50 Ω.
Fig.5
3000
f (MHz)
f (MHz)
Isolation (|s12|2) as a function of frequency;
typical values.
Fig.6
20
PL
(dBm)
Insertion gain (|s21|2) as a function of
frequency; typical values.
15
PL
(dBm)
(3)
15
(3)
(2)
(1)
10
(2)
10
5
5
0
0
(1)
-5
-30
-25
-20
-15
-10
-5
0
PD (dBm)
-40
-35
-30
f = 1 GHz; ZO = 50 Ω.
(1) VS= 4.5 V
(2) VS= 5.0 V
(3) VS= 5.5 V
f = 2.2 GHz; Z O = 50 Ω.
(1) VS= 4.5 V
(2) VS= 5.0 V
(3) VS= 5.5 V
Fig.7
Fig.8
Load power as a function of drive power at
1 GHz; typical values.
2002 Jan 14
6
-25
-20
-15
-10
-5
0
PD (dBm)
Load power as a function of drive power at
2.2 GHz; typical values.
Philips Semiconductors
Preliminary specification
MMIC wideband amplifier
BGM1011
5
6
NF
(dB)
K
(3)
4
5.5
3
5
2
(2)
4.5
(1)
1
0
4
0
1000
2000
0
3000
f (MHz)
ZO = 50 Ω.
(1) I S = 19.5 mA; VS= 4.5 V
(2) I S = 25.5 mA; VS= 5.0 V
(3) I S = 29.8 mA; VS= 5.5 V
Fig.9
2000
3000
f (MHz)
IS = 25.5 mA; V S = 5.0 V; ZO = 50 Ω.
Noise figure as a function of frequency;
typical values.
2002 Jan 14
1000
Fig.10 Stability factor as a function of frequency;
typical values.
7
2002 Jan 14
67.08784
56.50393
41.27266
31.24721
16.643
4.096
−8.496
−10.05
−1.301
0.32983
0.39031
0.34466
0.25915
0.21573
0.20270
2200
2400
2600
2800
3000
8
12.698
23.98115
67.60676
60.12684
2000
16.758
0.23153
50.8261
1800
42.13907
−24.6
0.18024
−4.547
0.20591
1400
1600
35.11364
−31.1
0.25490
1200
13.8
29.73953
−29.66
0.32818
0.29729
800
1000
−26.32
4.7
−19.36
0.35160
600
20.26048
17.83811
18.52172
0.36404
400
s21
MAGNITUDE
(ratio)
0.954
0.36374
200
13.342
ANGLE(d
eg)
−11.09
0.36264
MAGNITUDE
(ratio)
100
f (MHz)
s11
0.010019
0.011761
−100.2
−131.3
154.16
164.33
178.27
0.014548
0.013946
0.013803
0.013121
0.008713
−73.19
−160.5
0.007684
0.007313
0.008254
0.009534
0.010391
0.011953
0.014492
0.017526
0.01974
MAGNITUDE
(ratio)
−52.69
−36.83
−24.67
−14.9
−7.408
−1.373
4.008
12.011
24.366
ANGLE
(deg)
s12
Scattering parameters: VS = 5.0 V; IS = 25.5 mA; PD = −35 dBm; ZO = 50 Ω; Tamb = 25 °C
55.48
50.499
52.913
46.727
49.659
42.512
44.601
33.26
23.979
9.695
−0.816
−5.884
−9.388
−9.722
3.391
16.631
ANGLE
(deg)
0.37422
0.33170
0.30823
0.28137
0.26347
0.24156
0.21778
0.18642
0.15786
0.13665
0.12032
0.10619
0.10301
0.13121
0.22343
0.32582
MAGNITUDE
(ratio)
s22
130.13
136.52
151.71
173.89
−146.8
−100.6
−65.13
−44.12
−33.18
−25.66
−15.72
1.087
30.828
63.715
80.749
75.129
ANGLE
(deg)
1.3
1.2
1.0
0.9
0.9
0.9
1.1
1.4
1.6
1.7
1.7
1.8
1.7
1.6
1.4
1.2
KFACTOR
Philips Semiconductors
Preliminary specification
MMIC wideband amplifier
BGM1011
Philips Semiconductors
Preliminary specification
MMIC wideband amplifier
BGM1011
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT363
D
E
B
y
X
A
HE
6
v M A
4
5
Q
pin 1
index
A
A1
1
2
e1
3
bp
c
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.30
0.20
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
SOT363
2002 Jan 14
REFERENCES
IEC
JEDEC
EIAJ
SC-88
9
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Preliminary specification
MMIC wideband amplifier
BGM1011
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2002 Jan 14
10
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected].
SCA73
© Koninklijke Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613516/02/pp11
Date of release: 2002
Jan 14
Document order number:
9397 750 09297