MMDF1300 Power MOSFET 3 Amps, 25 Volts Complementary SO–8, Dual These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. • Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Logic Level Gate Drive – Can be Driven by Logic ICs • Miniature SO–8 Surface Mount Package – Saves Board Space • Diode Exhibits High Speed, with Soft Recovery http://onsemi.com 3 AMPERES 25 VOLTS RDS(on) = 100 m (N–Channel) RDS(on) = 210 m (P–Channel) N–Channel P–Channel D D G G S S MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain–to–Source Voltage Gate–to–Source Voltage Drain Current – Continuous N–Channel P–Channel Drain Current – Pulsed N–Channel P–Channel Operating and Storage Temperature Range Total Power Dissipation @ TA = 25°C Single Pulse Drain–to–Source Avalanche Energy – Starting TJ = 25°C (VDD = 20 Vdc, VGS = 10 Vdc, IL = 3.0 Apk, L = 25 mH, RG = 25 ) Thermal Resistance – Junction–to–Ambient (Note 1.) Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 sec. Symbol Value Unit VDSS VGS 25 Vdc ± 20 Vdc ID MARKING DIAGRAM Adc 3.0 2.0 SO–8, Dual CASE 751 STYLE 11 8 IDM Apk 9.0 6.0 TJ, Tstg –65 to +150 °C PD EAS 1.8 Watts 1300 LYWW 1 1300 L Y WW = Device Code = Location Code = Year = Work Week mJ PIN ASSIGNMENT 113 RθJA TL °C/W 66.3 °C 260 Source–1 1 8 Drain–1 Gate–1 2 7 Drain–1 Source–2 3 6 Drain–2 4 5 Drain–2 Gate–2 Top View 1. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), 10 sec. max. ORDERING INFORMATION Semiconductor Components Industries, LLC, 2001 March, 2001 – Rev. 1 1 Device Package MMDF1300R2 SO–8 Shipping 2500 Tape & Reel Publication Order Number: MMDF1300/D MMDF1300 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Polarity Min Typ Max – 30 – – Unit OFF CHARACTERISTICS V(BR)DSS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Vdc Zero Gate Voltage Drain Current (VDS = 25 Vdc, VGS = 0 Vdc) IDSS (N) (P) – – – – 1.0 1.0 µAdc Gate–Body Leakage Current (VGS = 20 Vdc, VDS = 0) IGSS – – – ±100 nAdc Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) VGS(th) (N) (P) 1.0 1.0 1.5 2.0 2.0 3.0 Vdc Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 2.0 Adc) RDS(on) (N) (P) – – 0.09 0.16 0.10 0.21 Ohms Drain–to–Source On–Resistance (VGS = 4.5 Vdc, ID = 1.0 Adc) RDS(on) (N) (P) – – 0.13 0.30 0.16 0.375 Forward Transconductance (VDS = 3.0 Vdc, ID = 1.5 Adc) gFS (N) (P) 1.0 1.0 – – – – mhos Ciss (N) (P) – – 215 200 301 300 pF Coss (N) (P) – – 111 100 158 160 Crss (N) (P) – – 30 40 60 75 td(on) (N) (P) – – 18 14 36 28 tr (N) (P) – – 98 95 196 180 td(off) (N) (P) – – 16 22 32 45 tf (N) (P) – – 30 40 60 80 QT (N) (P) – – 3.3 7.0 5.0 10 Q1 (N) (P) – – 1.2 1.2 – – Q2 (N) (P) – – 2.0 2.5 – – Q3 (N) (P) – – 1.9 3.5 – – ON CHARACTERISTICS (Notes 2. & 3.) Ohms DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Vd (VDS = 16 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4.) Turn–On Delay Time Rise Time Turn–Off Delay Time (VDD = 10 Vdc, ID = 2.0 Adc, VGS = 4.5 Vdc, RG = 6.0 Ω) Fall Time Total Gate Charge (VDS = 16 Vdc, ID = 2.0 2 0 Adc, Adc VGS = 4.5 Vdc) 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 3. Negative signs for P–Channel device omitted for clarity. 4. Switching characteristics are independent of operating junction temperature. http://onsemi.com 2 ns nC MMDF1300 ELECTRICAL CHARACTERISTICS – continued (TA = 25°C unless otherwise noted) Characteristic Symbol Polarity Min Typ Max Unit VSD (N) (P) – – 1.0 1.3 1.4 1.7 Vdc trr (N) (P) – – 23 20 – – ns ta (N) (P) – – 18 13 – – tb (N) (P) – – 5.0 7.0 – – QRR (N) (P) – – 0.02 0.02 – – SOURCE–DRAIN DIODE CHARACTERISTICS (Note 5.) Forward On–Voltage (Note 6.) (IS = 3.0 Adc, VGS = 0 Vdc) (IS = 2.0 Adc, VGS = 0 Vdc) Reverse Recovery Time (N) (ID = 2.0 Adc, VGS = 0 Vdc dIS/dt = 100 A/µs) Reverse Recovery Stored Charge 5. Negative signs for P–Channel device omitted for clarity. 6. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. http://onsemi.com 3 µC MMDF1300 PACKAGE DIMENSIONS SO–8 CASE 751–07 ISSUE V –X– NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. A 8 5 0.25 (0.010) S B 1 M Y M 4 K –Y– G C N X 45 SEATING PLANE –Z– 0.10 (0.004) H M D 0.25 (0.010) M Z Y S X S J DIM A B C D G H J K M N S MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0 8 0.25 0.50 5.80 6.20 STYLE 11: PIN 1. 2. 3. 4. 5. 6. 7. 8. INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 8 0.010 0.020 0.228 0.244 SOURCE 1 GATE 1 SOURCE 2 GATE 2 DRAIN 2 DRAIN 2 DRAIN 1 DRAIN 1 MiniMOS is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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