FAIRCHILD FJAF6810D

FJAF6810D
FJAF6810D
High Voltage Color Display Horizontal
Deflection Output (Damper Diode Built-In)
• High Collector-Base Breakdown Voltage : BVCBO = 1500V
• High Switching Speed : tF(typ.) =0.1µs
• For Color TV
TO-3PF
1
1.Base 2.Collector 3.Emitter
Equivalent Circuit
C
B
NPN Triple Diffused Planar Silicon Transistor
35Ω typ.
Absolute Maximum Ratings TC=25°C unless otherwise noted
E
Symbol
VCBO
Collector-Base Voltage
Parameter
Rating
1500
Units
V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
750
V
6
IC
Collector Current (DC)
10
V
A
ICP*
Collector Current (Pulse)
20
A
PC
Collector Dissipation
60
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 ~ 150
°C
* Pulse Test: Pulse Width=5ms, Duty Cycle < 10%
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
ICES
Parameter
Collector Cut-off Current
Test Conditions
VCB=1500V, RBE=0
Min
Typ
Max
1
Units
mA
ICBO
Collector Cut-off Current
VCB=800V, IE=0
IEBO
Emitter Cut-off Current
VEB=4V, IC=0
40
BVEBO
Base-Emitter Breakdown Voltage
IE=300mA, IC=0
6
hFE1
hFE2
DC Current Gain
VCE=5V, IC=1A
VCE=5V, IC=6A
7
5
VCE(sat)
Collector-Emitter Saturation Voltage
IC=6A, IB=1.5A
3
VBE(sat)
Base-Emitter Saturation Voltage
IC=6A, IB=1.5A
1.5
V
VF
Damper Diode Turn On Voltage
IF = 6A
2
V
tSTG*
Storage Time
tF*
Fall Time
VCC=200V, IC=6A, RL=33Ω
IB1=1.2A, IB2= - 2.4A
10
µA
250
mA
V
8
V
3
µs
0.2
µs
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
RθjC
Parameter
Thermal Resistance, Junction to Case
©2001 Fairchild Semiconductor Corporation
Typ
Max
2.08
Units
°C/W
Rev. B, August 2001
FJAF6810D
Typical Characteristics
10
100
VCE = 5V
8
hFE, DC CURRENT GAIN
IC [A], COLLECTOR CURRENT
IB=2.0A
IB=1.0A
IB=0.8A
6
IB=0.6A
IB=0.4A
4
IB=0.2A
2
0
0
2
4
6
8
10
12
14
16
o
Ta = 25 C
o
Ta = 125 C
10
o
Ta = - 25 C
1
0.1
18
1
10
IC [A], COLLECTOR CURRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
IC = 3 IB
VCE(sat), SATURATION CURRENT
VCE(sat) [V], SATURATIOM VOLTAGE
IC = 5 IB
1
o
Ta = 125 C
o
Ta = 25 C
o
Ta = - 25 C
10
1
o
Ta = 125 C
o
Ta = 25 C
o
Ta = - 25 C
0.1
0.1
1
1
10
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Collector-Emitter Saturation Voltage
10
20
IB1 = 1.2A, IC = 6A
VCC = 200V
16
tF & tSTG [µs], SWITCHING TIME
IC [A], COLLECTOR CURRENT
18
14
12
10
8
o
Ta = 25 C
6
4
o
Ta = - 25 C
tSTG
1
tF
0.1
2
o
Ta = 125 C
0
0.0
0.01
0.3
0.6
0.9
1.2
VBE [V], BASE-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage
©2001 Fairchild Semiconductor Corporation
1.5
1
10
IB2 [A], REVERSE BASE CURRENT
Figure 6. Resistive Load Switching Time
Rev. B, August 2001
FJAF6810D
Typical Characteristics (Continued)
10
tF & tSTG [µs], SWITCHING TIME
tF & tSTG [µs], SWITCHING TIME
10
tSTG
1
tF
0.1
IB2 = -2.4A, IC = 6A
VCC = 200V
0.01
tSTG
1
tF
0.1
IB1 = 1.2A, IB2 = -2.4A
VCC = 200V
0.01
1
10
1
IB1 [A], FORWARD BASE CURRENT
10
IC [A], COLLECTOR CURRENT
Figure 7. Resistive Load Switching Time
Figure 8. Resistive Load Switching Time
30
RB2 = 0, IB1 = 15A
VCC = 30V, L = 200µH
100
20
IC (Pulse) t = 100ms t = 10ms
15
10
VBE(off) = -6V
5
VBE(off) = -3V
0
10
100
1000
10000
VCE [V], COLLECTOR-EMITTER VOLTAGE
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
25
10
IC (DC)
t = 1ms
1
0.1
o
TC = 25 C
Single Pulse
0.01
1
Figure 9. Reverse Bias Safe Operating Area
10
100
1000
10000
Figure 10. Forward Bias Safe Operating Area
80
PC [W], POWER DISSIPATION
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
o
TC [ C], CASE TEMPERATURE
Figure 11. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. B, August 2001
FJAF6810D
Package Demensions
TO-3PF
4.50 ±0.20
5.50 ±0.20
15.50 ±0.20
2.00 ±0.20
°
22.00 ±0.20
23.00 ±0.20
10
1.50 ±0.20
16.50 ±0.20
2.50 ±0.20
14.50 ±0.20
0.85 ±0.03
2.00 ±0.20
16.50 ±0.20
2.00 ±0.20
4.00 ±0.20
3.30 ±0.20
+0.20
0.75 –0.10
2.00 ±0.20
3.30 ±0.20
5.45TYP
[5.45 ±0.30]
5.45TYP
[5.45 ±0.30]
+0.20
0.90 –0.10
5.50 ±0.20
26.50 ±0.20
10.00 ±0.20
(1.50)
2.00 ±0.20
2.00 ±0.20
14.80 ±0.20
3.00 ±0.20
ø3.60 ±0.20
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. B, August 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
UltraFET®
VCX™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H4