PERKINELMER VTB6061B

VTB Process Photodiodes
VTB6061B
PACKAGE DIMENSIONS inch (mm)
CASE 15 TO-8 HERMETIC
CHIP ACTIVE AREA: .058 in2 (37.7 mm2)
PRODUCT DESCRIPTION
Large area planar silicon photodiode in a “flat”
window, dual lead TO-8 package. The package
incorporates an infrared rejection filter. Cathode
is common to the case. These diodes have very
high shunt resistance and have good blue
response.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-40°C to 110°C
-40°C to 110°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22)
VTB6061B
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
UNITS
Min.
ISC
TC ISC
VOC
TC VOC
ID
RSH
TC RSH
CJ
H = 100 fc, 2850 K
ISC Temperature Coefficient
2850 K
.02
Open Circuit Voltage
H = 100 fc, 2850 K
420
mV
VOC Temperature Coefficient
2850 K
-2.0
mV/°C
Dark Current
H = 0, VR = 2.0 V
Shunt Resistance
H = 0, V = 10 mV
.10
GΩ
RSH Temperature Coefficient
H = 0, V = 10 mV
-8.0
%/°C
Junction Capacitance
H = 0, V = 0
8.0
nF
Spectral Application Range
λp
Spectral Response - Peak
VBR
Breakdown Voltage
θ1/2
Angular Resp. - 50% Resp. Pt.
NEP
D*
Max.
Short Circuit Current
λrange
26
Typ.
35
µA
.08
2.0
330
2
720
nA
nm
580
nm
40
V
±55
Degrees
-13 (Typ.)
Noise Equivalent Power
1.0 x 10
Specific Detectivity
6.1 x 10 12 (Typ.)
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
%/°C
W ⁄ Hz
cm Hz / W
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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