AGILENT MGA-81563-BLK

0.1 – 6 GHz 3 V, 14 dBm Amplifier
Technical Data
MGA-81563
Features
• +14.8 dBm P1dB at 2.0 GHz
Surface Mount Package
SOT-363 (SC-70)
+17 dBm Psat at 2.0 GHz
• Single +3V Supply
• 2.8 dB Noise Figure at
2.0␣ GHz
• 12.4 dB Gain at 2.0 GHz
• Ultra-miniature Package
Pin Connections and
Package Marking
• Unconditionally Stable
Applications
• High Dynamic Range LNA
GND 1
GND 2
81
• Buffer or Driver Amp for
PCS, PHS, ISM, SATCOM
and WLL Applications
INPUT 3
OUTPUT
6 and V
d
5 GND
4 GND
Note: Package marking provides
orientation and identification.
Simplified Schematic
OUTPUT
and Vd
Description
Hewlett-Packard’s MGA-81563 is
an economical, easy-to-use GaAs
MMIC amplifier that offers
excellent power and low noise
figure for applications from 0.1 to
6 GHz. Packaged in an ultraminiature SOT-363 package, it
requires half the board space of a
SOT-143 package.
The output of the amplifier is
matched to 50 Ω (better than
2.1:1␣ VSWR) across the entire
bandwidth. The input is partially
matched to 50 Ω (better than
2.5:1␣ VSWR) below 4 GHz and
fully matched to 50 Ω (better than
2:1 VSWR) above. A simple series
inductor can be added to the input
to improve the input match below
4 GHz. The amplifier allows a
wide dynamic range by offering a
2.7 dB NF coupled with a +27 dBm
Output IP3.
6
INPUT
The circuit uses state-of-the-art
PHEMT technology with proven
reliability. On-chip bias circuitry
allows operation from a single
+3␣ V power supply, while resistive
feedback ensures stability (K>1)
over all frequencies and
temperatures.
3
BIAS
BIAS
GND
1, 2, 4, 5
5965-9684E
6-196
MGA-81563 Absolute Maximum Ratings
Symbol
Vd
Vgd
Vin
Pin
Tch
TSTG
Parameter
Device Voltage, RF Output
to Ground
Device Voltage, Gate
to Drain
Range of RF Input Voltage
to Ground
CW RF Input Power
Channel Temperature
Storage Temperature
Units
V
Absolute
Maximum[1]
6.0
V
-6.0
V
+0.5 to -1.0
dBm
°C
°C
+13
165
-65 to 150
Thermal Resistance [2]:
θch-c = 220°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TC = 25°C (TC is defined to be the
temperature at the package pins
where contact is made to the
circuit board.)
MGA-81563 Electrical Specifications, TC = 25°C, ZO = 50 Ω, Vd = 3 V
Symbol
Gtest
Parameters and Test Conditions
Gain in test circuit[1]
circuit[1]
NFtest
Noise Figure in test
NF50
Noise Figure in 50 Ω system
Units
f = 2.0 GHz
Min.
Typ.
10.5
12.4
f = 2.0 GHz
2.8
f = 0.5 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 3.0 GHz
f = 4.0 GHz
f = 6.0 GHz
dB
f = 0.5 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 3.0 GHz
f = 4.0 GHz
f = 6.0 GHz
dB
f = 0.5 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 3.0 GHz
f = 4.0 GHz
f = 6.0 GHz
dBm
Output Third Order Intercept Point
f = 2.0 GHz
dBm
VSWRin
Input VSWR
f = 2.0 GHz
2.7:1
VSWRout
Output VSWR
f = 2.0 GHz
2.0:1
|S21|2
P1 dB
IP3
Id
Gain in 50 Ω system
Output Power at 1 dB Gain Compression
Device Current
mA
Max. Std Dev [2]
0.44
3.8
3.1
3.0
2.7
2.7
2.8
3.5
0.21
12.5
12.5
12.3
11.8
11.4
10.2
0.44
15.1
14.8
14.8
14.8
14.8
14.7
0.86
+27
31
42
0.21
1.0
51
Notes:
1. Guaranteed specifications are 100% tested in the circuit in Figure 10 in the Applications Information section.
2. Standard deviation number is based on measurement of at least 500 parts from three non-consecutive wafer lots during
the initial characterization of this product, and is intended to be used as an estimate for distribution of the typical
specification.
6-197
MGA-81563 Typical Performance, TC = 25° C, Vd = 3 V
16
5
16
4
15
NOISE FIGURE (dB)
GAIN (dB)
12
10
8
6
4
TA = +85°C
TA = +25°C
TA = –40°C
2
P1 dB (dBm)
14
3
2
13
TA = +85°C
TA = +25°C
TA = –40°C
1
0
14
0
0
1
2
3
4
5
6
TA = +85°C
TA = +25°C
TA = –40°C
12
11
0
1
2
FREQUENCY (GHz)
3
4
5
6
0
1
Figure 1. 50 Ω Power Gain vs.
Frequency and Temperature.
Figure 2. Noise Figure (into 50 Ω)
vs. Frequency and Temperature.
16
2
3
4
5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 3. Output Power @ 1 dB Gain
Compression vs. Frequency and
Temperature.
5
16
4
15
NOISE FIGURE (dB)
10
8
6
Vd = 3.3V
Vd = 3.0V
Vd = 2.7V
4
2
3
2
1
2
3
4
5
6
11
0
1
2
FREQUENCY (GHz)
60
3.5
50
DEVICE CURRENT (mA)
4
3
2.5
Output
2
2
3
4
5
6
0
1
5
FREQUENCY (GHz)
Figure 7. Input and Output VSWR
into 50 Ω vs. Frequency.
6
2
3
4
5
6
FREQUENCY (GHz)
Figure 6. Output Power @ 1 dB Gain
Compression) vs. Frequency and
Voltage.
16
14
Gain
40
30
TA = +85°C
TA = +25°C
TA = -40°C
20
10
1.5
1
4
Figure 5. Noise Figure (into 50 Ω) vs.
Frequency and Voltage.
Input
VSWR (n:1)
3
FREQUENCY (GHz)
Figure 4. 50 Ω Power Gain vs.
Frequency and Voltage.
0
Vd = 3.3V
Vd = 3.0V
Vd = 2.7V
12
0
0
1
13
Vd = 3.3V
Vd = 3.0V
Vd = 2.7V
1
0
14
GAIN and NF (dB)
GAIN (dB)
12
P1 dB (dBm)
14
12
10
8
6
4
NF
2
0
0
0
1
2
3
4
5
DEVICE VOLTAGE (V)
Figure 8. Device Current vs. Voltage
and Temperature.
6-198
0
1
2
3
4
5
6
FREQUENCY (GHz)
Figure 9. Minimum Noise Figure and
Associated Gain vs. Frequency.
MGA-81563 Typical Scattering Parameters[1], TC = 25°C, Z O = 50 Ω, Vd = 3 V
S11
S21
S12
S22
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
K
Factor
0.1
0.2
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
0.57
0.52
0.49
0.48
0.47
0.45
0.43
0.39
0.35
0.32
0.28
0.25
0.22
0.20
0.18
0.17
-16
-13
-16
-28
-40
-52
-63
-75
-87
-100
-114
-130
-146
-166
174
150
13.02
12.58
12.35
12.18
12.00
11.82
11.63
11.37
11.11
10.85
10.58
10.30
10.02
9.75
9.46
9.12
4.48
4.258
4.15
4.06
3.98
3.90
3.81
3.70
3.59
3.49
3.38
3.27
3.17
3.07
2.97
2.86
172
171
164
152
140
128
116
104
93
81
70
59
49
38
27
16
-25
-25
-25
-25
-25
-24
-24
-24
-22
-22
-22
-21
-21
-21
-21
-21
0.051
0.057
0.059
0.061
0.063
0.067
0.070
0.074
0.077
0.081
0.083
0.087
0.09
0.091
0.093
0.094
312
17
8
5
5
4
2
-1
-4
-7
-11
-15
-20
-25
-30
-36
0.43
0.38
0.35
0.35
0.34
0.34
0.32
0.31
0.29
0.27
0.25
0.23
0.21
0.19
0.17
0.14
-14
-13
-9
-15
-22
-30
-39
-46
-53
-60
-67
-74
-81
-90
-96
-100
1.47
1.58
1.64
1.65
1.65
1.65
1.66
1.69
1.73
1.77
1.82
1.85
1.91
1.93
1.98
2.05
MGA-81563 Typical Noise Parameters[1]
TC = 25°C, ZO = 50 Ω, Vd = 3 V
Frequency
GHz
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
NFO
dB
2.90
2.80
2.70
2.69
2.68
2.68
2.68
2.69
2.69
2.68
2.67
2.67
2.71
2.77
Γopt
Mag.
0.16
0.15
0.14
0.14
0.13
0.11
0.09
0.06
0.03
0.01
0.02
0.05
0.07
0.09
Ang.
1
17
28
37
44
50
56
65
76
137
-135
-109
-95
-78
Rn / 50 Ω
—
1.57
0.96
0.75
0.41
0.39
0.38
0.36
0.34
0.33
0.32
0.32
0.32
0.33
0.36
Note:
1. Reference plane per Figure 11 in Applications Information section.
6-199
MGA-81563 Applications
Information
Introduction
This high performance GaAs
MMIC amplifier was developed for
commercial wireless applications
from 100 MHz to 6 GHz.
The MGA-81563 runs on only
3␣ volts and typically requires only
42 mA to deliver 14.8 dBm of
output power at 1 dB gain
compression.
An innovative internal bias circuit
regulates the device’s internal
current to enable the MGA-81563
to operate over a wide temperature range with a single, positive
power supply of 3 volts.
The MGA-81563 will operate with
reduced performance with
voltages as low as 1.5 volts.
With a combination of high
linearity (+27 dBm output IP3) and
low noise figure (3 dB), the
MGA-81563 offers outstanding
performance for applications
requiring a high dynamic range,
such as receivers operating in
dense signal environments. A wide
dynamic range amplifier such as
the MGA-81563 can often be used
to relieve the requirements of
bulky, lossy filters at a receiver’s
input.
Test Circuit
The circuit shown in Figure 10 is
used for 100% RF testing of Noise
Figure and Gain. The 3.9 nH
inductor at the input fix-tunes the
circuit to 2 GHz. The only purpose
of the RFC at the output is to
apply DC bias to the device under
test. Tests in this circuit are used
to guarantee the NFtest and Gtest
parameters shown in the table of
Electrical Specifications.
100 pF
RF
INPUT
81
The MGA-81563 uses resistive
feedback to simultaneously
achieve flat gain over a wide
bandwidth and match the input
and output impedances to 50 Ω.
The MGA-81563 is unconditionally
stable (K>1) over its entire
frequency range, making it both
very easy to use and yielding
consistent performance in the
manufacture of high volume
wireless products.
The 14.8 dBm output power (P1dB)
also makes the MGA-81563
extremely useful for pre-driver,
driver and buffer stages. For
transmitter gain stage applications
that require higher output power,
the MGA-81563 can provide
50␣ mW (17 dBm) of saturated
output power with a high power
added efficiency of 45%.
3.9 nH
RF
OUTPUT
22 nH
RFC
Vd
100 pF
Figure 10. Test Circuit.
Phase Reference Planes
The positions of the reference
planes used to specify the SParameters and Noise Parameters
for this device are shown in
Figure 11. As seen in the illustration, the reference planes are
located at the point where the
package leads contact the test
circuit.
REFERENCE
PLANES
TEST CIRCUIT
Figure 11. Phase Reference Planes.
6-200
Specifications and Statistical
Parameters
Several categories of parameters
appear within this data sheet.
Parameters may be described with
values that are either “minimum
or maximum,” “typical,” or
“standard deviations.”
The values for parameters are
based on comprehensive product
characterization data, in which
automated measurements are
made on of a minimum of
500␣ parts taken from 3 nonconsecutive process lots of
semiconductor wafers. The data
derived from product characterization tends to be normally
distributed, e.g., fits the standard
“bell curve.”
Parameters considered to be the
most important to system performance are bounded by minimum
or maximum values. For the
MGA-81563, these parameters are:
Gain (Gtest), Noise Figure (NFtest),
and Device Current (Id). Each of
these guaranteed parameters is
100% tested.
Values for most of the parameters
in the table of Electrical Specifications that are described by typical
data are the mathematical mean
(µ), of the normal distribution
taken from the characterization
data. For parameters where
measurements or mathematical
averaging may not be practical,
such as the Noise and S-parameter
tables or performance curves, the
data represents a nominal part
taken from the “center” of the
characterization distribution.
Typical values are intended to be
used as a basis for electrical
design.
through holes (vias) that are
placed near the package terminals. As a minimum, one via
should be located next to each
ground pin to ensure good RF
grounding. It is a good practice to
use multiple vias to further
minimize ground path inductance.
50 Ω
RF Input
81
To assist designers in optimizing
not only the immediate circuit
using the MGA-81563, but to also
optimize and evaluate trade-offs
that affect a complete wireless
system, the standard
deviation␣ ( σ) is provided for
many of the Electrical Specifications parameters (at 25°) in
addition to the mean. The standard deviation is a measure of the
variability about the mean. It will
be recalled that a normal distribution is completely described by
the mean and standard deviation.
RF Output
and Vd
50 Ω
Biasing
The MGA-81563 is a voltagebiased device and is designed to
operate from a single, +3 volt
power supply with a typical
current drain of 42 mA. The
internal current regulation circuit
allows the amplifier to be operated with voltages as high +5 volts
or as low as +1.5 volt. Refer to the
section titled “Operation at Bias
Voltages Other than 3 Volts” for
information on performance and
precautions when using other
voltages.
Figure13. RFLayout.
Standard statistics tables or
calculations provide the probability of a parameter falling between
any two values, usually symmetrically located about the mean.
Referring to Figure 12 for example, the probability of a parameter being between ± 1σ is 68.3%;
between ± 2σ is 95.4%; and between ± 3σ is 99.7%.
68%
95%
99%
-3σ
-2σ
-1σ Mean (µ) +1σ +2σ
(typical)
+3σ
Parameter Value
Figure12. NormalDistribution.
RF Layout
The RF layout in Figure 13 is
suggested as a starting point for
microstripline designs using the
MGA-81563 amplifier. Adequate
grounding is needed to obtain
optimum performance and to
maintain stability. All of the
ground pins of the MMIC should
be connected to the RF
groundplane on the backside of
the PCB by means of plated
It is recommended that the PCB
pads for the ground pins not be
connected together underneath
the body of the package. PCB
traces hidden under the package
cannot be adequately inspected
for SMT solder quality.
PCB Material
FR-4 or G-10 printed circuit board
materials are a good choice for
most low cost wireless applications. Typical board thickness is
0.020 to 0.031 inches. The width of
the 50 Ω microstriplines on PC
boards in this thickness range is
also very convenient for mounting
chip components such as the
series inductor at the input or DC
blocking and bypass capacitors.
For higher frequencies or for
noise figure critical applications,
the additional cost of PTFE/glass
dielectric materials may be
warranted to minimize transmission line loss at the amplifier’s
input. A 0.5 inch length of 50 Ω
microstripline on FR-4, for
example, has approximately
0.3␣ dB loss at 4 GHz. This loss will
add directly to the noise figure of
the MGA-81563.
6-201
Typical Application Example
The printed circuit layout in
Figure 14 can serve as a design
guide. This layout is a
microstripline design (solid
groundplane on the backside of
the circuit board) with a 50 Ω
input and output. The circuit is
fabricated on 0.031-inch thick
FR-4 dielectric material. Plated
through holes (vias) are used to
bring the ground to the top side of
the circuit where needed. Multiple
vias are used to reduce the
inductance of the paths to ground.
H
OUT
IN
+V
MGA-8-A
Figure14. PCBLayout.
A schematic diagram of the
application circuit is shown in
Figure 15. DC blocking capacitors
(C1 and C2) are used at the input
and output of the MMIC to isolate
the device from adjacent circuits.
Although the input terminal of the
MGA-81563 is at ground potential,
it is not a current sink. If the input
is connected to a preceding stage
that has a voltage present, the use
of the DC blocking capacitor (C1)
is required.
C2
Vd
C4
RFC
RF
Input
C1
L1
RF
Output
C2
Figure15. SchematicDiagram.
DC bias is applied to the MGA81563 through the RF Output pin.
An inductor (RFC), or length of
high impedance transmission line
(preferably λ/4 at the band
center), is used to isolate the RF
from the DC supply.
The power supply is bypassed to
ground with capacitor C3 to keep
RF off of the DC lines and to
prevent gain dips or peaks in the
response of the amplifier.
An additional bypass capacitor,
C4, may be added to the bias line
near the Vd connection to eliminate unwanted feedback through
bias lines that could cause oscillation. C4 will not normally be
needed unless several stages are
cascaded using a common power
supply.
When multiple bypass capacitors
are used, consideration should be
given to potential resonances. It is
important to ensure that the
capacitors when combined with
additional parasitic L’s and C’s on
the circuit board do not form
resonant circuits. The addition of
a small value resistor in the bias
supply line between bypass
capacitors will often “de-Q” the
bias circuit and eliminate the
effect of a resonance.
The value of the DC blocking and
RF bypass capacitors (C1 – C3)
should be chosen to provide a
small reactance (typically
<␣ 5␣ ohms) at the lowest operating
frequency. The reactance of the
RF choke (RFC) should be high
(e.g., several hundred ohms) at
the lowest frequency of operation.
The MGA-81563’s response at low
frequencies is limited to approximately 100 MHz by the size of
capacitors integrated on the
MMIC chip.
H
C1
Frequency
(GHz)
0.9
1.5
1.9
2.4
4.0
5.8
Inductor, L1
(nH)
10
6.8
3.9
2.7
0.5
0
Figure16. ValuesforL1.
These values for L1 take into
account the short length of 50 Ω
transmission line between the
inductor and the input pin of the
device.
For applications requiring minimum noise figure (NFo), some
improvement over a 50 Ω match is
possible by matching the signal
input to the optimum noise match
impedance, Γo, as specified in the
“Typical Noise Parameters” table.
OUT
L1
C2
IN
RFC
C3
+V
MGA-8-A
The input of the MGA-81563 is
partially matched internally to
50␣ Ω. Without external matching
elements, the input VSWR of the
MGA-81563 is 3.0:1 at 300 MHz
and decreases to 1.5:1 at 6 GHz.
This will be adequate for many
applications. If a better input
VSWR is required, the use of a
series inductor, L1 in the applications example, (or, alternatively a
length of high impedance transmission line) is all that is needed
to improve the match. The table in
Figure 16 shows suggested values
for L1 for various wireless frequency bands.
C4
For most applications, as shown
in the example circuit, the output
of the MGA-81563 is already
sufficiently well matched to 50 Ω
and no additional matching is
needed. The nominal device
output VSWR is ≤ 2.2:1 from
300␣ MHz through 6 GHz.
The completed application
amplifier with all components and
SMA connectors is shown in
Figure 17.
Figure 17. Complete Application Circuit.
6-202
50
PAE
Pout and IP3 (dBm), PAE (%)
40
20
First of all, it is important that the
stage preceding the MGA-81563
not overdrive the device. Referring to the “Absolute Maximum
Ratings” table, the maximum
allowable input power is
+13␣ dBm. This should be regarded
as the input power level above
which the device could be permanently damaged.
Driving the amplifier into saturation will also affect electrical
performance. Figure 18 presents
the Output Power, Third Order
Intercept Point (Output IP3), and
Power Added Efficiency (PAE) as
a function of Input Power. This
data represents performance into
a 50 Ω load. Since the output
impedance of the device changes
when driven into saturation, it is
possible to obtain even more
output power with a “power
match.” The optimum impedance
match for maximum output power
is dependent on frequency and
actual output power level and can
be arrived at empirically.
Power
10
0
-10
-20
There are several design considerations related to reliability and
performance that should be taken
into account when operating the
amplifier in saturation.
IP3
30
-15
-10
-5
0
5
10
Like other active devices, the
intermodulation products of the
MGA-81563 increase as the device
is driven further into nonlinear
operation. The 3rd, 5th, and 7th
order intermodulation products of
the MGA-81563 are shown in
Figure 19 along with the fundamental response. This data was
measured in the test circuit in
Figure 10.
POWER IN (dBm)
Figure18.OutputPower,IP
3,and
Power-Added-Efficiencyvs.Input
Power. (V d =3.0V)
As the input power is increased
beyond the linear range of the
amplifier, the gain becomes more
compressed. Gain as a function of
either input or output power may
be derived from Figure 18. Gain
compression renders the amplifier
less sensitive to variations in the
power level from the preceding
stage. This can be a benefit in
systems requiring fairly constant
output power levels from the
MGA-81563.
Increased efficiency (45% at full
output power) is another benefit
of saturated operation. At high
output power levels, the bias
supply current drops by about
15%. This is normal and is taken
into account for the PAE data in
Figure 18.
Noise figure and input impedance
are also affected by saturated
power operation. As a guideline,
the input impedance is lowered,
resulting in an improvement in
input VSWR of approximately 20%.
6-203
Pout, 3rd, 5th, 7th HARMONICS (dBm)
Operation in Saturation for
Higher Output Power
For applications such as predriver and driver stages in transmitters, the MGA-81563 can be
operated in saturation to deliver
up to 50 mW (17 dBm) of output
power. The power added efficiency increases to 45% at these
power levels.
30
20
10
Pout
0
-10
3rd
-20
-30
-40
5th
-50
-60
-30 -15
-10
-5
7th
0
5
10
15
FREQUENCY (GHz)
Figure19.IntermodulationProducts
vs.InputPower.(V
d =3.0V)
Operation at Bias Voltages
Other than 3 Volts
While the MGA-81563 is designed
primarily for use in +3 volt
applications, the internal bias
regulation circuitry allows it to be
operated with any power supply
voltage from +1.5 to +5 volts.
Performance of Gain, Noise
Figure, and Output Power over a
wide range of bias voltage is
shown in Figure 20. As can be
seen, the gain and NF are fairly
flat, but an increase in output
power is possible by using higher
voltages. The use of +5 volts
increases the P1dB by 2 dBm.
18
+5 V
NF, GAIN, P1 dB (dB)
+5 V
+5 V
Power
16
14
47 Ω
12
Gain
Silicon
Diodes
Zener
Diode
(b)
(c)
10
8
6
4
NF
(a)
2
0
0
1
2
3
4
5
Figure21. BiasingFromHigher
SupplyVoltages.
SUPPLY VOLTAGE (V)
Figure20. Gain,NoiseFigure,and
OutputPowervs.SupplyVoltage.
Some thermal precautions must
be observed for operation at
higher bias voltages. For reliable
operation, the channel temperature should be kept within the
165° C indicated in the “Absolute
Maximum Ratings” table. As a
guideline, operating life tests have
established a MTTF in excess of
106 hours for channel temperatures up to 150° C.
There are several means of biasing
the MGA-81563 at 3 volts in
systems that use higher power
supply voltages. The simplest
method, shown in Figure 21a, is to
use a series resistor to drop the
device voltage to 3 volts. For
example, a 47 Ω resistor will drop
a 5-volt supply to 3 volts at the
nominal current of 42 mA. Some
variation in performance could be
expected for this method due to
variations in current within the
specified 31 to 51 mA min/max
range.
A second method illustrated in
Figure 21b, is to use forwardbiased diodes in series with the
power supply. For example, three
silicon diodes connected in series
will drop a 5-volt supply to
approximately 3 volts.
shown in Figure 22 (dimensions
are in inches). This layout provides ample allowance for package placement by automated
assembly equipment without
adding parasitics that could
impair the high frequency RF
performance of the MGA-81563.
The layout is shown with a
nominal SOT-363 package footprint superimposed on the PCB
pads.
0.026
0.075
0.035
The use of the series diode
approach has the advantage of
less dependency on current
variation in the amplifiers since
the forward voltage drop of a
diode is somewhat current
independent.
Reverse breakdown diodes (e.g.,
Zener diodes) could also be used
as in Figure 21c. However, care
should be taken to ensure that the
noise generated by diodes in
either Zener or reverse breakdown is adequately filtered (e.g.,
bypassed to ground) such that the
diode’s noise is not added to the
amplifier’s signal.
SOT-363 PCB Footprint
A recommended PCB pad layout
for the miniature SOT-363 (SC-70)
package used by the MGA-81563 is
6-204
0.016
Figure22. PCBPadLayout
(dimensionsininches).
SMT Assembly
Reliable assembly of surface
mount components is a complex
process that involves many
material, process, and equipment
factors, including: method of
heating (e.g., IR or vapor phase
reflow, wave soldering, etc.)
circuit board material, conductor
thickness and pattern, type of
solder alloy, and the thermal
conductivity and thermal mass of
components. Components with a
low mass, such as the SOT-363
package, will reach solder reflow
temperatures faster than those
with a greater mass.
250
TMAX
TEMPERATURE (°C)
200
150
Reflow
Zone
100
Preheat
Zone
Cool Down
Zone
50
0
0
60
120
180
240
300
TIME (seconds)
Figure 23. Surface Mount Assembly Profile.
The MGA-81563 is has been
qualified to the time-temperature
profile shown in Figure 23. This
profile is representative of an IR
reflow type of surface mount
assembly process.
After ramping up from room
temperature, the circuit board
with components attached to it
(held in place with solder paste)
passes through one or more
preheat zones. The preheat zones
increase the temperature of the
board and components to prevent
thermal shock and begin evaporating solvents from the solder paste.
The reflow zone briefly elevates
the temperature sufficiently to
produce a reflow of the solder.
The rates of change of temperature for the ramp-up and cooldown zones are chosen to be low
enough to not cause deformation
of the board or damage to components due to thermal shock. The
maximum temperature in the
reflow zone (TMAX) should not
exceed 235 °C.
These parameters are typical for a
surface mount assembly process
for the MGA-81563. As a general
guideline, the circuit board and
components should be exposed
only to the minimum temperatures and times necessary to
achieve a uniform reflow of
solder.
Electrostatic Sensitivity
GaAs MMICs are
electrostatic discharge
(ESD) sensitive
devices. Although the
MGA-81563 is robust in design,
permanent damage may occur to
these devices if they are subjected
to high energy electrostatic
discharges. Electrostatic charges
as high as several thousand volts
(which readily accumulate on the
human body and on test equipment) can discharge without
detection and may result in
degradation in performance or
failure. The MGA-81563 is an ESD
Class 1 device. Therefore, proper
ESD precautions are recommended when handling, inspecting, and assembling these devices
to avoid damage.
6-205
Package Dimensions
Outline 63 (SOT-363/SC-70)
1.30 (0.051)
REF.
2.20 (0.087)
2.00 (0.079)
1.35 (0.053)
1.15 (0.045)
0.650 BSC (0.025)
0.425 (0.017)
TYP.
2.20 (0.087)
1.80 (0.071)
0.10 (0.004)
0.00 (0.00)
0.30 REF.
1.00 (0.039)
0.80 (0.031)
0.25 (0.010)
0.15 (0.006)
10°
0.30 (0.012)
0.10 (0.004)
0.20 (0.008)
0.10 (0.004)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
MGA-81563 Part Number Ordering Information
Part Number
No. of Devices
Container
MGA-81563-TR1
3000
7" Reel
MGA-81563-BLK
100
antistatic bag
6-206
Device Orientation
REEL
TOP VIEW
END VIEW
4 mm
CARRIER
TAPE
8 mm
81
81
81
81
USER
FEED
DIRECTION
COVER TAPE
Tape Dimensions and Product Orientation
For Outline 63
P
P2
D
P0
E
F
W
C
D1
t1 (CARRIER TAPE THICKNESS)
Tt (COVER TAPE THICKNESS)
K0
8° MAX.
A0
DESCRIPTION
5° MAX.
B0
SYMBOL
SIZE (mm)
SIZE (INCHES)
CAVITY
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A0
B0
K0
P
D1
2.24 ± 0.10
2.34 ± 0.10
1.22 ± 0.10
4.00 ± 0.10
1.00 + 0.25
0.088 ± 0.004
0.092 ± 0.004
0.048 ± 0.004
0.157 ± 0.004
0.039 + 0.010
PERFORATION
DIAMETER
PITCH
POSITION
D
P0
E
1.55 ± 0.05
4.00 ± 0.10
1.75 ± 0.10
0.061 ± 0.002
0.157 ± 0.004
0.069 ± 0.004
CARRIER TAPE
WIDTH
THICKNESS
W
t1
8.00 ± 0.30
0.255 ± 0.013
0.315 ± 0.012
0.010 ± 0.0005
COVER TAPE
WIDTH
TAPE THICKNESS
C
Tt
5.4 ± 0.10
0.062 ± 0.001
0.205 ± 0.004
0.0025 ± 0.00004
DISTANCE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
F
3.50 ± 0.05
0.138 ± 0.002
CAVITY TO PERFORATION
(LENGTH DIRECTION)
P2
2.00 ± 0.05
0.079 ± 0.002
6-207