TEA2025B TEA2025D STEREO AUDIO AMPLIFIER DUAL OR BRIDGE CONNECTION MODES FEW EXTERNAL COMPONENTS SUPPLY VOLTAGE DOWN TO 3V HIGH CHANNEL SEPARATION VERY LOW SWITCH ON/OFF NOISE MAX GAIN OF 45dB WITH ADJUST EXTERNAL RESISTOR SOFT CLIPPING THERMAL PROTECTION 3V < VCC < 15V P = 2 • 1W, VCC = 6V, RL = 4Ω P = 2 • 2.3W, VCC = 9V, RL = 4Ω P = 2 • 0.1W, VCC = 3V, RL = 4Ω POWERDIP 12+2+2 SO20 (12+4+4) ORDERING NUMBERS: TEA2025B (PDIP) TEA2025D (SO) DESCRIPTION The TEA2025B/D is a monolithic integrated circuit in 12+2+2 Powerdip and 12+4+4 SO, intended for use as dual or bridge power audio amplifier portable radio cassette players. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Test Conditions Unit VS Supply Voltage 15 V IO Ouput Peak Current 1.5 A TJ Junction Temperature 150 °C Tstg Storage Temperature 150 °C BLOCK DIAGRAM GND(Sub) IN 1+ FEED THERMAL PROTECT. GND GND BOOT 1 OUT 1 50Ω 10KΩ + START CIRCUIT 1 1 5KΩ DECOUPLING SVR VS+ BRIDGE - IN 2+ + 2 2 50Ω 10KΩ 50Ω D94AU120 June 1994 FEED GND GND BOOT 2 OUT 2 1/9 TEA2025B - TEA2025D POWERDIP 12+2+2 PIN CONNECTION (Top view) BRIDGE 1 16 +Vs OUT.2 2 15 OUT.1 BOOT.2 3 14 BOOT.1 GND 4 13 GND GND 5 12 GND 6 11 FEEDBACK 7 10 IN.1 (+) 8 9 FEEDBACK IN.2 (+) SVR GND (sub.) SO 12+4+4 PIN CONNECTION (Top view) BRIDGE 1 20 VCC OUT 2 2 19 OUT 1 BOOT 2 3 18 BOOT 1 GND 4 17 GND GND 5 16 GND GND 6 15 GND GND 7 14 GND FEEDBACK 8 13 FEEDBACK IN 2(+) 9 12 IN 1(+) 10 11 GND(Sub) SVR D94AU119 THERMAL DATA Symbol R th j-case Rth j-amb Description Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max SO 12+4+4 (*) PDIP 12+2+2 (**) Unit 15 65 15 60 °C/W °C/W (*) The Rth j-amb is measured with 4sq cm copper area heatsink (**) The Rth j-amb is measured on devices bonded on a 10 x 5 x 0.15cm glass-epoxy substrate with a 35µm thick copper surface of 5 cm2. 2/9 TEA2025B - TEA2025D ELECTRICAL CHARACTERISTICS (Tamb = 25°C, VCC = 9V, Stereo unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. VS Supply Voltage IQ Quiescent Current 35 VO Quiescent Output Voltage 4.5 AV Voltage Gain ∆AV Voltage Gain Difference Rj PO Input Impedance 3 Stereo Bridge Output Power (d = 10%) 43 49 SVR EN(IN) CT Stereo 8 (per channel) Vs = 9V; RL = 4Ω Supply Voltage Rejection f = 100Hz, VR = 0.5V, Rg = 0 Input Noise Voltage RG = 0 R G = 10 4Ω Cross-Talk f = 1KHz, Rg = 10KΩ DC VOLT (V) 12 V 50 mA V 45 51 9V 9V 6V 6V 6V 6V 3V 3V 12V 4Ω 8Ω 4Ω 8Ω 16Ω 32Ω 4Ω 32Ω 8Ω 9V 6V 6V 3V 3V 8Ω 4Ω 8Ω 16Ω 32Ω 1.7 0.7 Stereo Bridge Distortion Term. N° (PDIP) Unit 47 53 dB ±1 Bridge d Max. dB 30 KΩ 2.3 1.3 1 0.6 0.25 0.13 0.1 0.02 2.4 W 4.7 2.8 1.5 0.18 0.06 W 1.5 0.3 0.5 40 46 40 1.5 3 52 % dB 3 6 mV dB 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 0.04 4.5 8.9 0 0 0.6 0.04 8.5 0 0.04 0.6 0 0 8.9 4.5 9 Figure 1: Bridge Application (Powerdip) Figure 2: Stereo Application (Powerdip) C1 C10 C6 C4 C8 C2 C5 C7 C11 C9 C3 3/9 TEA2025B - TEA2025D Figure 3: Supply Current vs. Supply Voltage (RL = 4Ω) Figure 4: Output Voltage vs. Supply Voltage I(mA) Vo(V) 8 50 7 6 40 5 4 30 3 2 20 STEREO 1 STEREO 0 10 3 6 9 12 15 3 6 9 12 15 Vs(V) Vs(V) Figure 6: THD versus Output Power (f = 1KHz, VS = 6V) Figure 5: Output Power vs. Supply Voltage (THD = 10%, f = 1KHz) 10THD(%) Po(W) 3.5 3 Rl=8ohm Rl=16ohm 2.5 Rl=8ohm Rl=4ohm Rl=4 OHM Rl=16ohm 2 1 1.5 1 STEREO 0.5 0 3 6 9 Vs(V) 4/9 12 15 0.1 0 STEREO 0.2 0.4 0.6 Po(W) 0.8 1 TEA2025B - TEA2025D APPLICATION INFORMATION Input Capacitor Input capacitor is PNP type allowing source to be referenced to ground. In this way no input coupling capacitor is required. However, a series capacitor (0.22 uF)to the input side can be useful in case of noise due to variable resistor contact. The total gain of the bridge is given by: VOUT = VIN R3 R1 ) (1+ 1 1 R4 R2+R4+ Rf+R2 + JWC1 JWC1 and with the suggested values (C1 = C2 = 100 µF, Rf= 0) means: Gv = 52 dB R1 Figure 8 Bootstrap The bootstrap connection allows to increase the output swing. The suggested value for the bootstrap capacitors (100uF) avoids a reduction of the output signal also at low frequencies and low supply voltages. Voltage Gain Adjust STEREO MODE The voltage gain is determined by on-chip resistors R1 and R2 together with the external RfC1 series connected between pin 6 (11) and ground. The frequency response is given approximated by: VOUT = VIN with first pole at f = 32 Hz R1 1 Rf + R2 + JWC1 With Rf=0, C1=100 uF, the gain results 46 dB with pole at f=32 Hz. THE purpose of Rf is to reduce the gain. It is recommended to not reduce it under 36 dB. BRIDGE MODE Figure 7 The bridge configuration is realized very easily thanks to an internal voltage divider which provides (at pin 1) the CH 1 output signal after reduction. It is enough to connect pin 6 (inverting input of CH 2) with a capacitor to pin 1 and to connect to ground the pin 7. Output Capacitors. The low cut off frequency due to output capacitor depending on the load is given by: FL = 1 2 ΠCOUT • RL with COUT 470µF and RL = 4 ohm it means F L = 80 Hz. Pop Noise Most amplifiers similar to TEA 2025B need external resistors between DC outputs and ground in order to optimize the pop on/off performance and crossover distortion. Figure 9 The TEA 2025B solution allows to save components because of such resistors (800 ohm)are included into the chip. 5/9 TEA2025B - TEA2025D Stability A good layout is recommended in order to avoid oscillations. Generally the designer must pay attention on the following points: - No sockets. 2) the heatsink can have a smaller factor of safety compared with that of a conventional circuit. There is no device damage in the case of excessive junction temperature: all that happens is that PO (and therefore Ptot) and Id are reduced. - Short wires of components and short connections. - No ground loops. - Bypass of supply voltage with capacitors as nearest as possible to the supply I.C.pin.The low value(poliester)capacitors must have good temperature and frequency characteristics. APPLICATION SUGGESTION The recommended values of the components are those shown on stereo application circuit of Fig. 2 different values can be used, the following table can help the designer. 6/9 COMPONENT RECOMMENDED VALUE C1,C2 0.22µF C3 100µF C4,C5 100µF C6,C7 470µF C8,C9 0.15µF C10, C11 100µF PURPOSE LARGER THAN SMALLER THAN INPUT DC DECOUPLING IN CASE OF SLIDER CONTACT NOISE OF VARIABLE RESISTOR RIPPLE REJECTON DEGRADATION OF SVR, INCREASE OF THD AT LOW FREQUENCY AND LOW VOLTAGE BOOTSTRAP OUTPUT DECOUPLING DC INCREASE OF LOW FREQUENCY CUTOFF FREQUENCY STABILITY DANGER OSCILLATIONS OF INVERTING INPUT DC DECOUPLING INCREASE OF LOW FREQUENCY CUTOFF TEA2025B - TEA2025D SO20 PACKAGE MECHANICAL DATA mm DIM. MIN. TYP. A a1 inch MAX. MIN. TYP. 2.65 0.1 0.104 0.3 a2 MAX. 0.004 0.012 2.45 0.096 b 0.35 0.49 0.014 0.019 b1 0.23 0.32 0.009 0.013 C 0.5 0.020 c1 45 (typ.) D 12.6 13.0 0.496 0.512 E 10 10.65 0.394 0.419 e 1.27 0.050 e3 11.43 0.450 F 7.4 7.6 0.291 0.299 L 0.5 1.27 0.020 0.050 M S 0.75 0.030 8 (max.) 7/9 TEA2025B - TEA2025D DIP16 PACKAGE MECHANICAL DATA mm DIM. MIN. a1 0.51 B 0.85 b b1 TYP. MAX. MIN. TYP. MAX. 0.020 1.40 0.033 0.50 0.38 0.055 0.020 0.50 D 0.015 0.020 20.0 0.787 E 8.80 0.346 e 2.54 0.100 e3 17.78 0.700 F 7.10 0.280 I 5.10 0.201 L Z 8/9 inch 3.30 0.130 1.27 0.050 TEA2025B - TEA2025D Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore Spain - Sweden - Switzerland - Taiwan - Thaliand - United Kingdom - U.S.A. 9/9