STMICROELECTRONICS STP7NE10

STP7NE10
®
N - CHANNEL 100V - 0.3 Ω - 7A - TO-220
STripFET POWER MOSFET
PRELIMINARY DATA
TYPE
V DSS
R DS(on)
ID
STP7NE10
100 V
< 0.4 Ω
7A
■
■
■
■
■
TYPICAL RDS(on) = 0.3 Ω
EXCEPTIONAL dv/dt CAPABILITY
AVALANCHE RUGGED TECHNOLOGY
100 % AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
3
1
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique " Single Feature
Size " strip-based process. The resulting transistor shows extremely high packing density for
low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore
a remarkable manufacturing reproducibility.
2
TO-220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ DC MOTOR CONTROL (DISK DRIVES,etc.)
■ DC-DC & DC-AC CONVERTERS
■ SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
Symbol
V DS
V DGR
VGS
Parameter
Value
Unit
Drain-source Voltage (V GS = 0)
100
V
Drain- gate Voltage (R GS = 20 kΩ)
100
V
± 20
V
Gate-source Voltage
o
ID
Drain Current (continuous) at T c = 25 C
7
A
ID
Drain Current (continuous) at T c = 100 o C
4.9
A
Drain Current (pulsed)
28
A
I DM (•)
P tot
dv/dt( 1 )
T st g
Tj
o
Total Dissipation at T c = 25 C
45
W
Derating Factor
0.3
W/ o C
6
V/ns
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
October 1999
-65 to 150
o
C
175
o
C
(1) ISD ≤7 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/5
STP7NE10
THERMAL DATA
R thj-case
R thj-amb
R thc-sink
Tl
o
3.33
100
1.5
275
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
C/W
C/W
o
C/W
o
C
o
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T j max)
E AS
Single Pulse Avalanche Energy
(starting T j = 25 o C, I D = I AR , V DD = 30 V)
Max Value
Unit
7
A
40
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V (BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
I D = 250 µA
Zero Gate Voltage
V DS = Max Rating
Drain Current (V GS = 0) V DS = Max Rating
IGSS
Gate-body Leakage
Current (V DS = 0)
Typ.
Max.
100
V GS = 0
I DSS
Min.
Unit
V
T c = 100 o C
V GS = ± 20 V
1
10
µA
µA
± 100
nA
ON (∗)
Symbol
Parameter
Test Conditions
I D = 250 µA
V GS(th)
Gate Threshold
Voltage
V DS = V GS
R DS(on)
Static Drain-source On
Resistance
V GS = 10 V ID = 3.5 A
I D(on)
On State Drain Current V DS > I D(on) x R DS(on)max
V GS = 10 V
Min.
Typ.
Max.
Unit
2
3
4
V
0.32
0.4
Ω
7
A
DYNAMIC
Symbol
g fs (∗)
C iss
C oss
C rss
2/5
Parameter
Test Conditions
Forward
Transconductance
V DS > I D(on) x R DS(on)max
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
I D =2.5 A
V GS = 0
Min.
Typ.
Max.
Unit
2.5
S
305
45
21
pF
pF
pF
®
STP7NE10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
t d(on)
tr
Turn-on Time
Rise Time
V DD = 50 V
R G = 4.7 Ω
Qg
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 80 V
Min.
ID = 5 A
Typ.
Max.
6.5
15
I D = 3.5 A
V GS = 5 V
V GS = 5 V
Unit
ns
ns
14
6
4
18
nC
nC
nC
Typ.
Max.
Unit
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
t d(Voff)
tf
Turn-off Delay Time
Fall Time
V DD = 50 V
R G = 4.7 Ω
I D = 3.5A
V GS = 10 V
25
7
ns
ns
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
V DD =80V
R G = 4.7 Ω
I D =7A
V GS = 10 V
7
8
16
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
ISD
I SDM (•)
V SD (∗)
t rr
Q rr
I RRM
Parameter
Test Conditions
Min.
Typ.
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 8 A
I SD = 5 A
V DD = 50 V
V GS = 0
di/dt = 100 A/µs
T j = 150 o C
Max.
Unit
7
28
A
A
1.5
V
75
ns
210
µC
5.5
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
®
3/5
STP7NE10
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
D1
0.107
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
14.0
0.511
L2
16.4
L4
0.645
13.0
0.551
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
D1
C
D
A
E
L5
H2
G
G1
F1
L2
F2
F
Dia.
L5
L9
L7
L6
4/5
L4
P011C
®
STP7NE10
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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®
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