STN3NE06L ® N - CHANNEL 60V - 0.10 Ω - 3A - SOT-223 STripFET POWER MOSFET PRELIMINARY DATA TYPE STN3NE06L ■ ■ ■ ■ ■ V DSS R DS(on) ID 60 V < 0.120 Ω 3A TYPICAL RDS(on) = 0.10 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION 2 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size " stip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 1 2 3 SOT-223 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ DC MOTOR CONTROL (DISK DRIVES,etc.) ■ DC-DC & DC-AC CONVERTERS ■ SYNCHRONOUS RECTIFICATION ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ) Gate-source Voltage o ID Drain Current (continuous) at T c = 25 C ID Drain Current (continuous) at T c = 100 o C I DM (•) Ptot T stg Tj Unit 60 V 60 V ± 20 V 3 A 1.8 A Drain Current (pulsed) 12 A Total Dissipation at T c = 25 o C 2.5 W 0.02 W/ o C 6 V/ns Derating Factor dv/dt( 1 ) Value Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature (•) Pulse width limited by safe operating area New RDS (on) spec. starting from JULY 98 August 1998 -65 to 150 o C 150 o C (1) ISD ≤ 12 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 1/5 STN3NE06L THERMAL DATA R thj-pcb R thj-amb Tl o 50 60 Thermal Resistance Junction-PC Board Max Thermal Resistance Junction-ambient Max (Surface Mounted) Maximum Lead Temperature For Soldering Purpose o C/W C/W o 260 C AVALANCHE CHARACTERISTICS Symbol Parameter I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max) E AS Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , VDD = 25 V) Max Value Unit 3 A 20 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating o C Gate-body Leakage Current (V DS = 0) Min. Typ. Max. 60 VGS = 0 Unit V T c = 125 V GS = ± 20 V 1 10 µA µA ± 100 nA ON (∗) Symbol Parameter Test Conditions ID = 250 µA V GS(th) Gate Threshold Voltage V DS = VGS R DS(on) Static Drain-source On Resistance V GS = 10 V I D = 6A V GS = 5 V I D = 6A ID(on) On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V Min. Typ. Max. Unit 1 1.7 2.5 V 0.080 0.1 0.100 0.12 Ω Ω 3 A DYNAMIC Symbol g fs (∗) C iss C oss C rss 2/5 Parameter Test Conditions Forward Transconductance V DS > I D(on) x R DS(on)max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz I D = 1.5 A V GS = 0 V Min. Typ. 1 3 700 100 30 Max. Unit S 960 140 45 pF pF pF STN3NE06L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/dt)on Qg Q gs Q gd Parameter Test Conditions Turn-on Time Rise Time V DD = 30 V R G = 4.7 Ω ID = 6 A V GS = 5 V Turn-on Current Slope V DD = 25 V R G = 4.7 Ω ID = 6 A V GS = 10 V Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 40 V I D = 12 A Min. Typ. Max. Unit 17 35 23 50 ns ns 200 V GS = 5 V A/µs 13 6 5 18 nC nC nC Typ. Max. Unit 9 18 30 12 25 45 ns ns ns Typ. Max. Unit 3 12 A A 1.5 V SWITCHING OFF Symbol t r(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 48 V R G = 4.7 Ω Min. I D = 12 A V GS =5 V SOURCE DRAIN DIODE Symbol Parameter Test Conditions I SD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage I SD = 3 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 12 A V DD = 25 V t rr Q rr I RRM Min. V GS = 0 di/dt = 100 A/µs T j = 150 o C 65 ns 0.13 µC 4 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/5 STN3NE06L SOT-223 MECHANICAL DATA mm DIM. mils MIN. TYP. MAX. MIN. TYP. MAX. a 2.27 2.3 2.33 89.4 90.6 91.7 b 4.57 4.6 4.63 179.9 181.1 182.3 c 0.2 0.4 0.6 7.9 15.7 23.6 d 0.63 0.65 0.67 24.8 25.6 26.4 e1 1.5 1.6 1.7 59.1 63 66.9 e4 0.32 12.6 f 2.9 3 3.1 114.2 118.1 122.1 g 0.67 0.7 0.73 26.4 27.6 28.7 l1 6.7 7 7.3 263.8 275.6 287.4 l2 3.5 3.5 3.7 137.8 137.8 145.7 L 6.3 6.5 6.7 248 255.9 263.8 L e1 l2 d a c b e4 f l1 C B C E g P008B 4/5 STN3NE06L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. . 5/5