Order this document by MRF421/D SEMICONDUCTOR TECHNICAL DATA The RF Line Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W (PEP) Minimum Gain = 10 dB Efficiency = 40% 100 W (PEP), 30 MHz RF POWER TRANSISTORS NPN SILICON • Intermodulation Distortion @ 100 W (PEP) — IMD = – 30 dB (Min) • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR CASE 211–11, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 20 Vdc Collector–Base Voltage VCBO 45 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Collector Current — Continuous IC 20 Adc Withstand Current — 10 s — 30 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 290 1.66 Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C Symbol Max Unit RθJC 0.6 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) V(BR)CEO 20 — — Vdc Collector–Emitter Breakdown Voltage (IC = 200 mAdc, VBE = 0) V(BR)CES 45 — — Vdc Collector–Base Breakdown Voltage (IC = 200 mAdc, IE = 0) V(BR)CBO 45 — — Vdc Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 3.0 — — Vdc ICES — — 10 mAdc OFF CHARACTERISTICS Collector Cutoff Current (VCE = 16 Vdc, VBE = 0, TC = 25°C) (continued) REV 1 RF DEVICE DATA MOTOROLA Motorola, Inc. 1997 MRF421 1 ELECTRICAL CHARACTERISTICS – continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit hFE 10 70 — — Cob — 550 800 pF Common–Emitter Amplifier Power Gain (VCC = 12.5 Vdc, Pout = 100 W, IC(max) = 10 Adc, ICQ = 150 mAdc, f = 30, 30.001 MHz) GPE 10 12 — dB Collector Efficiency (VCC = 12.5 Vdc, Pout = 100 W, IC(max) = 10 Adc, ICQ = 150 mA, f = 30, 30.001 MHz) η 40 — — % IMD — – 33 – 30 dB ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS Intermodulation Distortion (1) (VCE = 12.5 Vdc, Pout = 100 W, IC = 10 Adc, ICQ = 150 mA, f = 30, 30.001 MHz) NOTE: 1. To proposed EIA method of measurement. Reference peak envelope power. R1 + BIAS + L5 CR1 C5 C6 – C7 L4 C8 C9 C10 L2 – C4 RF INPUT C2 12.5 Vdc RF OUTPUT L1 D.U.T. C1 R2 C1, C2, C4 — 170 – 780 pF, ARCO 469 C3 — 80 – 480 pF, ARCO 466 C5, C7, C10 — ERIE 0.1 µF, 100 V C6 — MALLORY 500 µF @ 15 V Electrolytic C9 — 100 µF, 15 V Electrolytic C8 — 1000 pF, 350 V UNDERWOOD R1 — 10 Ω, 25 Watt Wirewound C3 L3 R2 — 10 Ω, 1.0 Watt Carbon CR1 — 1N4997 L1 — 3 Turns, #16 Wire, 5/16″ I.D., 5/16″ Long L2 — 12 Turns, #16 Enameled Wire Closewound, 1/4″ I.D. L3 — 1–3/4 Turns, 1/8″ Tubing, 3/8″ I.D., 3/8″ Long L4 — 10 µH Molded Choke L5 — 10 Ferrite Beads — FERROXCUBE #56–590–65/3B Figure 1. 30 MHz Test Circuit Schematic MRF421 2 MOTOROLA RF DEVICE DATA 160 VCC = 12.5 V ICQ = 150 mA TWO TONE TEST: f = 30, 30.001 MHz 120 Pout , OUTPUT POWER (WATTS PEP) Pout , OUTPUT POWER (WATTS PEP) 160 80 40 0 0 4 8 12 Pin, INPUT POWER (WATTS PEP) 120 80 40 0 16 IMD = – 30 dB ICQ = 150 mA f = 30, 30.001 MHz 8 Figure 2. Output Power versus Input Power 16 Figure 3. Output Power versus Supply Voltage – 20 IMD, INTERMODULATION DISTORTION (dB) 25 20 G PE , POWER GAIN (dB) 10 12 14 VCC, SUPPLY VOLTAGE (VOLTS) 15 10 VCC = 12.5 V ICQ = 150 mA Pout = 100 W PEP 5 0 1.5 2 3 5 7 10 f, FREQUENCY (MHz) 15 20 30 Figure 4. Power Gain versus Frequency VCC = 12.5 V ICQ = 150 mA f = 30, 30.001 MHz – 25 – 30 – 35 3RD ORDER – 40 5TH ORDER – 45 0 20 40 60 80 100 Pout, OUTPUT POWER (WATTS PEP) 120 140 Figure 5. Intermodulation Distortion versus Output Power IC, COLLECTOR CURRENT (AMP) 40 20 30 8 TC = 25°C 4 15 Zin 2 7.5 0.8 0.4 1 2 5 10 20 50 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 6. DC Safe Operating Area MOTOROLA RF DEVICE DATA 100 VCC = 12.5 V ICQ = 150 mA Pout = 100 W PEP FREQUENCY MHz Zin Ohms 2.0 7.5 15 30 5.35 – j2.2 2.8 – j1.9 1.39 – j1.1 0.7 – j0.5 f = 2 MHz Figure 7. Series Equivalent Impedance MRF421 3 2.5 Rout , PARALLEL EQUIVALENT OUTPUT RESISTANCE (OHMS) Cout , PARALLEL EQUIVALENT OUTPUT CAPACITANCE (pF) 20,000 VCC = 12.5 V ICQ = 150 mA Pout = 100 W (PEP) 16,000 12,000 8000 4000 0 1.5 2 3 5 7 10 f, FREQUENCY (MHz) 15 20 30 VCC = 12.5 V ICQ = 150 mA Pout = 100 W (PEP) 2 1.5 1 0.5 0 1.5 Figure 8. Output Capacitance versus Frequency 2 3 5 7 10 f, FREQUENCY (MHz) 15 20 30 Figure 9. Output Resistance versus Frequency PACKAGE DIMENSIONS A U NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. M 1 M Q DIM A B C D E H J K M Q R U 4 R 2 B 3 D K J C H E SEATING PLANE STYLE 1: PIN 1. 2. 3. 4. INCHES MIN MAX 0.960 0.990 0.465 0.510 0.229 0.275 0.216 0.235 0.084 0.110 0.144 0.178 0.003 0.007 0.435 ––– 45 _NOM 0.115 0.130 0.246 0.255 0.720 0.730 MILLIMETERS MIN MAX 24.39 25.14 11.82 12.95 5.82 6.98 5.49 5.96 2.14 2.79 3.66 4.52 0.08 0.17 11.05 ––– 45 _NOM 2.93 3.30 6.25 6.47 18.29 18.54 EMITTER BASE EMITTER COLLECTOR CASE 211–11 ISSUE N Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 MRF421 4 ◊ *MRF421/D* MRF421/D MOTOROLA RF DEVICE DATA