BUL38D BULK38D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ ■ ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS VERY HIGH SWITCHING SPEED FULLY CHARACTERISED AT 125oC HIGH RUGGEDNESS INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS ■ SWITCH MODE POWER SUPPLIES 3 1 2 1 TO-220 2 3 SOT-82 ■ DESCRIPTION The BUL38D and BULK38D are manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage withstand capability. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value BUL38D Unit BULK38D VC ES Collector-Emitter Voltage (V BE = 0) 800 V CEO Collector-Emitter Voltage (I B = 0) 450 V V EBO Emitter-Base Voltage (IC = 0) 9 V Collector Current 5 A Collector Peak Current (t p < 5 ms) 8 A IB Base Current 2 A IC I CM IB M Base Peak Current (tp < 5 ms) P tot Total Dissipation at Tc = 25 o C T stg Storage Temperature Range Tj Max. Operating Junction Temperature December 1994 V 4 70 A 60 W -65 to 150 o C 150 o C 1/7 BUL38D/BULK38D THERMAL DATA R thj-cas e Rthj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max TO220 SOT-82 1.78 62.5 2.08 80 o o C/W C/W o ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) Symbol Parameter Test Conditions I CE S Collector Cut-off Current (V BE = 0) V CE = 800 V V CE = 800 V I CEO Collector Cut-off Current (I B = 0) V CE = 450 V V CEO(sus) Collector-Emitter Sustaining Voltage I C = 100 mA Min. Typ. T j = 125 o C L = 25 mH Max. Unit 100 500 µA µA 250 µA 450 V 9 V Emitter-Base Voltage (I C = 0) I E = 10 mA V CE (sat)∗ Collector-Emitter Saturation Voltage IC = 1 A IC = 2 A IC = 3 A I B = 0.2 A I B = 0.4 A I B = 0.75 A 0.5 0.7 1.1 V V V VB E(sat)∗ Base-Emitter Saturation Voltage IC = 1 A IC = 2 A I B = 0.2 A I B = 0.4 A 1.1 1.2 V V DC Current Gain I C = 2 A V CE = 5 V I C = 10 mA V CE = 5 V ts tf INDUCTIVE LOAD Storage Time Fall Time IC = 2 A V BE (off) = -5 V V CL = 250 V I B1 = 0.4 A RBB = 0 Ω L = 200 µH 1 55 1.8 100 µs ns ts tf INDUCTIVE LOAD Storage Time Fall Time IC = 2 A V BE (off) = -5 V V CL = 250 V T j = 125 o C I B1 = 0.4 A RBB = 0 Ω L = 200 µH 1.3 100 Vf Diode Forward Voltage IC = 2 A V EBO h FE ∗ 8 10 µs ns 2.5 ∗ Pulsed: Pulse durati on = 300 µs, duty cycle 1.5 % Safe Operating Areas for TO-220 2/7 Safe Operating Areas for SOT-82 V BUL38D/BULK38D Derating Curves DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Reverse Biased SOA 3/7 BUL38D/BULK38D Inductive Fall Time RBSOA and Inductive Load Switching Test Circuit (1) F ast electroni c swi tch (2) Non-inducti ve Resistor (3) F ast recovery recti fier 4/7 Inductive Storage Time BUL38D/BULK38D TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 3.5 3.93 0.137 0.154 3.75 3.85 0.147 0.151 D1 C D A E L9 DIA. H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 5/7 BUL38D/BULK38D SOT-82 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 7.4 7.8 0.291 0.307 B 10.5 11.3 0.413 0.445 b 0.7 0.9 0.028 0.035 b1 0.49 0.75 0.019 0.030 C 2.4 2.7 0.04 0.106 c1 1.2 0.047 D 15.7 0.618 e 2.2 0.087 e3 4.4 0.173 F 3.8 0.150 H 2.54 0.100 C D H B F A c1 b e b1 e3 6/7 P032A BUL38D/BULK38D Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 7/7